A5081516722- ZnO doping and properties
- Approximation Theory and Sequence Spaces
- Copper-based nanomaterials and applications
- Gas Sensing Nanomaterials and Sensors
- Chalcogenide Semiconductor Thin Films
- Electronic and Structural Properties of Oxides
- Phase-change materials and chalcogenides
- Ferroelectric and Negative Capacitance Devices
- Analytic and geometric function theory
- biodegradable polymer synthesis and properties
- Hydrogels: synthesis, properties, applications
- Advanced Materials and Mechanics
- Polysaccharides Composition and Applications
- Semiconductor materials and interfaces
- Mathematical Inequalities and Applications
- Electrospun Nanofibers in Biomedical Applications
- Transition Metal Oxide Nanomaterials
- Advanced Memory and Neural Computing
- Perovskite Materials and Applications
- Semiconductor materials and devices
IMEC
2023-2024
KU Leuven
2023-2024
Indian Institute of Science Bangalore
2019-2023
Guru Gobind Singh Indraprastha University
2007
CuO is a multifunctional metal oxide excellent for chemiresistive gas sensors. In this work, we report CuO-based NO2 sensors fabricated via chemical vapor deposition (CVD). CVD allows great control on composition, stoichiometry, impurity, roughness, and grain size of films. This endows with high selectivity, responsivity, sensitivity, repeatability, low hysteresis, quick recovery. All these are achieved without the need expensive unscalable nanostructures, or heterojunctions, technologically...
Cuprous Oxide (Cu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O) is an important p-type semiconductor. Several micro and nano-structures of Cu O have been employed in sensing oxidizing reducing gases. However, for mass production sensors, large-area films are needed, which hitherto was a challenge. In this work we report chemiresistive gas sensor based on pure-phase (~90 nm thick), synthesized by chemical vapor deposition (CVD). At...
Area-selective deposition (ASD) is a bottom-up patterning technique that of interest for nanoprocessing and next-generation semiconductor device manufacturing. This work demonstrates the great potential dechlorosilylation chemistry ASD through example Ge2Sb2Te5 (GST), promising phase change material storage class memory (SCM) applications. The fabrication SCM devices may be facilitated by as it involves complex nanoscale three-dimensional structures. We therefore investigate GST on TiN...
Unlike most metal oxides, copper oxides (Cu2O and CuO) show p-type conductivity, which is required for many electronic applications. Cu2O has been reported to have relatively high hole mobility (256 cm2 V–1 s–1). Unfortunately, the thin-film deposition of pure not trivial. Pure-phase formed in a narrow pressure–temperature window, only under precise oxygen potential. To obtain pure-phase Cu2O, we deposited Cu using chemical vapor (CVD) performed postdeposition oxidation without breaking...
Using a combination of chemical vapor deposition, controlled nucleation, and surface energy optimization, we demonstrate record hole mobility in Cu 2 O thin-films thin-film transistors.
There are very few p-type semiconductors available compared to n-type for positive sensing response oxidizing gases and other important electronic applications. Cupric oxide (CuO) is one of the oxides that show conductivity, useful gases. Many researchers obtained CuO using chemical solid-state routes, but uniformity large-area deposition have been main issues. Chemical vapor such technique provides control on several parameters, which allow obtaining thin films having crystallinity over a...
Ge2Sb2Te5 (GST) is a well-known phase change material used in nonvolatile memory devices, photonics, and displays. This study investigates the impact of precursor sequence during atomic layer deposition (ALD) GST from GeCl2.C4H8O2, SbCl3, Te[(CH3)3Si]2 on Si/SiO2 substrates, focusing growth per cycle, morphology, composition along with initial reactions substrate. We found that while thick layers approach stoichiometric Ge2Sb2Te5, Ge-rich interfacial initially formed, regardless binary ALD...
Memristor is an emerging fourth fundamental electronic element that can reduce the complexity of memory-wall architecture in existing system. Therefore, this area demands lots focus on material, material growth, and process engineering domains. Here, we report a memristor using Cu2O1–x/CuO1–y heterojunctions, which different from conventional devices notable ways. First, mechanism not filamentary. Second, underlying Cu vacancy migration, SET voltage scales with electric field active layer....