Au nanoparticle (AuNP)-decorated silicon nanowire (SiNW) field-effect transistors (FETs) were made using a top-down technique to enhance the sensing responses and long-term reliability for detection of ammonia (NH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ). The as-fabricated, diluted hydrofluoric acid (dHF)-treated, AuNP-decorated SiNW FETs prepared characterized at room temperature. These show better sensitivity low power...

This paper describes a walking-age pattern analysis and identification system using 3-D accelerometer gyroscope. First, walking database from 79 volunteers of ages ranging 10 to 83 years is constructed. Second, feature extraction clustering, three distinct groups, children below, adults in 20-60s, elders 70s 80s, were identified. For this study, low-pass filtering, empirical mode decomposition, K-means used process analyze the experimental results. Analysis shows that volunteers'...

The fabrication and characterization of a field effect transistor using radial core/shell structure based on ZnTe nanowires is reported here.

Highly sensitive silicon-nanonet biologically active field-effect transistors (BioFETs) for the detection of influenza A (H1N1) virus have been demonstrated using a top-down process. The BioFETs show excellent intrinsic electrical characteristics, such as low threshold voltage 0.7 V and high on/off current ratio ~10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> . sensing characteristics were measured at room temperature with various...

We experimentally demonstrate Si-based electrolyte-gated transistors (EGTs) for detecting urea. The top-down-fabricated device exhibited excellent intrinsic characteristics, including a low subthreshold swing (SS) (~80 mV/dec) and high on/off current ratio (~107). sensitivity, which varied depending on the operation regime, was analyzed with urea concentrations ranging from 0.1 to 316 mM. current-related response could be enhanced by reducing SS of devices, whereas voltage-related remained...

Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Bo Jin, Daegun Kang, Jungsik Kim, M. Meyyappan, Jeong-Soo Lee; Thermally efficient highly scalable In2Se3 nanowire phase change memory. J. Appl. Phys. 28 April 2013; 113 (16): 164303. https://doi.org/10.1063/1.4802672 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers...

The highly sensitive detection of peanut allergens (PAs) using silicon-based electrolyte-gated transistors (Si-EGTs) was demonstrated. Si-EGT made a top-down technique. fabricated showed excellent intrinsic electrical characteristics, including low threshold voltage 0.7 V, subthreshold swing <70 mV/dec, and gate leakage <10 pA. Surface functionalization immobilization antibodies were performed for the selective PAs. voltage-related sensitivity (SV) constant behavior from regime to linear...

We report the electrical characteristics and pH responses of a Si-nanonet ion-sensitive field-effect transistor with ultra-thin parylene-H as gate sensing membrane. The fabricated device shows excellent DC characteristics: low subthreshold swing 85 mV/dec, high current on/off ratio ~10⁷ leakage ~10-10 A. interface trap density 1.04 × 1012 cm-2 mobility 510 cm²V-1s-1 were obtained. devices evaluated in various buffer solutions. A sensitivity 48.1 ± 0.5 mV/pH device-to-device variation ~6.1%...

Phase change random access memory (PCRAM) devices are usually constructed using tellurium based compounds, but efforts to seek other materials providing desirable characteristics have continued. We fabricated PCRAM Ga-doped In2O3 nanowires with three different Ga compositions (Ga/(In+Ga) atomic ratio: 2.1%, 11.5% and 13.0%), investigated their phase switching properties. The (∼40 nm in diameter) can be repeatedly switched between crystalline amorphous phases, concentration-dependent behavior...

Abstract The sonodynamic activities of gold nanoparticles (GNPs) with different morphologies, nanospheres (GNSs), nanoflowers (GNFs) and nanorods (GNRs), were explored by multi‐spectroscopic methods, in which the lesion degree human serum albumin (HSA) was used as assessment index. results revealed that three GNPs all had certain sonosensitivity but varying from morphologies. It also found concentration ultrasonic parameters critical influencing factors injury HSA. Investigating physical...

Wide view (WV) film is an important material in the polariser. It a hybrid-aligned, discotic liquid crystal (DLC) on alignment layer tri-acetyl cellulose film, which used as compensation twisted nematic (TN) mode display (LCD). The relation between direction of DLC WV and rubbing polyimide glass substrate TN LCD was investigated. results indicated that contrast ratio (CR) can be increased by adjusting this angle . When 88° work, CR could reach 1000:1 horizontal vertical viewing angles were...

The resistance stability and thermal of phase change memory devices using ∼40 nm diameter Ga-doped In2O3 nanowires (Ga:In2O3 NW) with different Ga-doping concentrations have been investigated. estimated (R(t)/R0 ratio) improves higher Ga concentration is dependent on annealing temperature. extracted (Rth) increases Ga-concentration thus the power consumption can be reduced by ∼90% for 11.5% Ga:In2O3 NW, compared to 2.1% NW. excellent characteristics nanowire offer an avenue develop low...

The effects of geometrical parameters on the electrical characteristics network-channel low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) were investigated. grain boundary and interface trap densities also extracted using such as hole-to-hole distance, hole-branch top width, effective channel area filling factor (AF). It was found that largely dependent AF, mainly owing to reduced densities. However, excessive hole formation in structure increase resistance decrease...

Phase change random access memory (PCRAM) devices exhibit a steady increase in resistance the amorphous phase upon aging and this drift phenomenon directly affects device reliability. A stress relaxation model is used here to study effect of encapsulating layer material addressing PCRAM. The can be increased or decreased depending on biaxial moduli (YPCM) (YELM) according relationship between them regime. proposed suggests that effectively reduced by selecting proper as an layer. Moreover,...

In this work, the oblique single grain boundary (oSGB) in 3D NAND unit cells is simulated with various temperatures to study threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) variation due oSGB cell of poly-Si channel. As temperature increases, overall V variations decrease because thermionic effect and more free carrier from generation effect. addition, difference become larger as leans toward source or drain sides

Motivation: Infiltration and recurrence of glioblastoma is typically fatal. Conventional imaging techniques are insufficient for identifying the infiltrated regions. Goal(s): We aim to develop an interactive visualization method based on conventional MRI identify peri-tumor infiltration. Approach: Glioblastoma infiltrating area detection framework (GIADIF) consists two steps: delineating peritumoral edema extracting voxels with low fractional anisotropy value as user-interactive input; using...

We present the fabrication and electrical characteristics of nanonet-channel (NET) low-temperature polysilicon channel (LTPS) thin-film transistors (TFTs) using a nanosphere-assisted patterning (NAP) technique. The NAP technique is introduced to form instead electron beam lithography (EBL) or conventional photolithography method. size space holes in nanonet structure are well controlled by oxygen plasma treatment metal lift-off process. TFTs show improved terms ION/IOFF, threshold voltage,...

In order to detect DMMP (dimethyl methyl-phosphonate; sarin simulant), tetrafluorohydroquinone (TFQ) functionalized graphene chemiresistive sensors are successfully developed. The show significantly enhanced sensitivity with various concentrations. addition, for the real-time detection, a method using first derivative of current will be presented.

Abstract With the development of TFT‐LCD TV display devices, high performance and thinness feature become mainstream. It is a great challenge to make direct backlight LCD module with CCFL light source thinner in mechanical optical design. In this paper, we adopted special structure reduce thickness display. This can decrease space for mixing. And feasibility also supported by simulations experiments.

Effects of carbon implantation (C-imp) on the contact characteristics Ti/Ge were investigated. The C-imp into system was developed to reduce severe Fermi-level pinning (FLP) and improve thermal stability contact. current density (J)-voltage (V) showed that rectifying behavior an Ohmic-like with C-imp. lowering Schottky barrier height (SBH) indicated could mitigate FLP. In addition, it allows a lower specific resistivity (ρc) at rapid annealing (RTA) temperatures in range 450–600 °C. A...

The effects of carbon incorporation on the thermal stability interfacial TiO₂ layer and electrical characteristics Ti/TiO₂/<i>n</i>-Ge contacts were investigated. improved contact characterized in terms Schottky barrier height (SBH) specific resistivity (&#x03C1;_<i>c</i>) using diode circular transmission line model (CTLM). values SBH &#x03C1;_<i>c</i> increased after rapid annealing (RTA) above 550 &#x00B0;C. current density&#x2013;bias voltage...