A5072117143- Advancements in Semiconductor Devices and Circuit Design
- 2D Materials and Applications
- Semiconductor materials and devices
- Graphene research and applications
- Quantum and electron transport phenomena
- Nanowire Synthesis and Applications
- Thermal properties of materials
- Boron and Carbon Nanomaterials Research
- Force Microscopy Techniques and Applications
- Ga2O3 and related materials
- Advanced Thermoelectric Materials and Devices
- Solar Thermal and Photovoltaic Systems
- Molecular Junctions and Nanostructures
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Radio Frequency Integrated Circuit Design
- Near-Field Optical Microscopy
- Solar Radiation and Photovoltaics
- Machine Learning in Materials Science
- Ferroelectric and Negative Capacitance Devices
- Mechanical and Optical Resonators
- Manufacturing Process and Optimization
- Photovoltaic System Optimization Techniques
The University of Texas at Dallas
2017-2021
Arizona State University
2011-2015
Visvesvaraya National Institute of Technology
2013
Abstract Hexagonal boron nitride (h-BN) and semiconducting transition metal dichalcogenides (TMDs) promise greatly improved electrostatic control in future scaled electronic devices. To quantify the prospects of these materials devices, we calculate out-of-plane in-plane dielectric constant from first principles for TMDs trigonal prismatic octahedral coordination, as well h-BN, with a thickness ranging monolayer bilayer to bulk. Both ionic contribution response are computed. Our calculations...
Abstract The transfer‐free direct growth of high‐performance materials and devices can enable transformative new technologies. Here, room‐temperature field‐effect hole mobilities as high 707 cm 2 V −1 s are reported, achieved using transfer‐free, low‐temperature (≤120 °C) helical tellurium (Te) nanostructure on SiO /Si. Te nanostructures exhibit significantly higher device performance than other grown semiconductors, it is demonstrated that through careful control the process, be...
Using first-principles calculations, we investigate six transition-metal nitride halides (TMNHs): HfNBr, HfNCl, TiNBr, TiNCl, ZrNBr, and ZrNCl as potential van der Waals (vdW) dielectrics for transition metal dichalcogenide (TMD) channel transistors. We calculate the exfoliation energies bulk phonon find that TMNHs are exfoliable thermodynamically stable. both optical static dielectric constants in in-plane out-of-plane directions monolayer TMNHs. In monolayers, constant ranges from 5.04...
In recent years, solar energy has established itself as one of the chief non-conventional sources, promising to be source future. Owing impending crisis due exhaustion fossil fuels, it become necessary develop techniques that will help exploit in a better, more efficient way. This paper presents photo voltaic system incorporating such technique: Solar Position Tracking. The goal was design an and cost-effective tracking for small panels, those used domestic applications like water heating....
An amendment to this paper has been published and can be accessed via a link at the top of paper.
Empirical pseudopotentials (EPs) allow for accurate and efficient modeling of atomistic electron transport. Unfortunately, EPs are available only a few materials atomic configurations. Furthermore, nanostructures have historically been described using variety different parameterized forms. To compete with more general first-principles methods, we propose an automated workflow to generate form any material configuration. In particular, focus on the generation transport calculations, i.e.,...
Two-dimensional materials, especially Transition Metal Dichalcogenide (TMDs), have emerged as a potential alternative to silicon for future electronic devices. We study the static out-of-plane dielectric constant range of single and bilayer two-dimensional materials. Dielectric response these materials is studied using Density Functional Theory (DFT). Our calculations reveal that increases with increasing chalcogen atomic number. The results also show ionic contribution much smaller compared...
This paper discusses a multi-scale device modeling scheme developed at Arizona State University for calculating the self-heating effects in nano-scale silicon devices. The first level of involves coupling two dimensional particle based simulator, that uses Monte Carlo (MC) method to simulate transport characteristics electrons device, self-consistent Poisson's equation solver charge distribution inside and energy balance acoustic optical phonon bath account effects. At next level, simulator...
One-dimensional (1D) materials present the ultimate limit of extremely scaled devices by virtue their spatial dimensions and excellent electrostatic gate control in transistors based on these materials. Among 1D materials, graphene nanoribbon (a-GNR) prove to be very promising due high carrier mobility prospect reproducible fabrication process [1]. Two popular approaches study atomistically electronic properties expand wavefunction either a plane-wave basis set, or through linear combination...
We present a method to simulate ballistic quantum transport in one-dimensional nanostructures, such as extremely scaled transistors, with channel of nanowires or nanoribbons. In contrast most popular approaches, we develop our employing an accurate plane-wave basis at the atomic scale while retaining numerical efficiency localized (tight-binding) larger scales. At core is finite-element expansion, where finite element enriched by set Bloch waves high-symmetry points Brillouin zone crystal....
As scaling of electronic devices has reduced dimensions into the nanoscale regime, investigations towards intrinsically two-dimensional (2D) materials are being pursued. Examples 2D under investigation monolayers graphite, transition-metal dichalocogenides (TMDs), tellurium, and topological insulators (TIs). To enable practical applications however, must outperform currently employed three-dimensional materials. Properties interest mobilities, device drive current, dielectric response but...
Van der Waals materials have recently received great interest in the research community because of ability to exfoliate and grow mono- or few-layer materials. Some important future possible applications are found field nanoelectronics where extremely scaled transistors magnetic memory devices envisioned. However, there more than 1,000 van known date an exhaustive experimental investigation is very expensive. This makes accurate theoretical prediction properties from first principles,...