Guanyu Zhou

ORCID: 0000-0002-2291-9427
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About
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Research Areas
  • Iron-based superconductors research
  • Microplastics and Plastic Pollution
  • Advanced oxidation water treatment
  • Physics of Superconductivity and Magnetism
  • Recycling and Waste Management Techniques
  • Corporate Taxation and Avoidance
  • 2D Materials and Applications
  • Semiconductor Quantum Structures and Devices
  • Advanced Photocatalysis Techniques
  • Advanced Semiconductor Detectors and Materials
  • Graphene research and applications
  • Semiconductor materials and devices
  • Membrane Separation Technologies
  • Electronic and Structural Properties of Oxides
  • Graphene and Nanomaterials Applications
  • MXene and MAX Phase Materials
  • Quantum Dots Synthesis And Properties
  • Microgrid Control and Optimization
  • Landslides and related hazards
  • Soil erosion and sediment transport
  • HVDC Systems and Fault Protection
  • Atmospheric and Environmental Gas Dynamics
  • Hydrology and Sediment Transport Processes
  • Semiconductor Lasers and Optical Devices
  • Perovskite Materials and Applications

Sichuan University
2018-2025

Yibin University
2022-2025

University of Notre Dame
2021-2025

Tianjin University
2024

Dalian Jiaotong University
2024

Xi'an University of Technology
2023

Beijing Forestry University
2021-2023

Soochow University
2021-2022

China University of Petroleum, East China
2019-2021

Nanjing Tech University
2017-2021

Cleaving with a metal handle Using adhesive tape to pull off monolayers of two-dimensional (2D) materials is now well-established approach. However, the flakes tend be micrometer scale, and creation multilayer stacks for device application can challenging time consuming. Shim et al. show that variety 2D materials, including molybdenum disulfide hexagonal boron nitride, cleaved from multilayers grown as 5-centimeter-diameter wafers. The capped nickel layer, which used entire stack. bottom...

10.1126/science.aat8126 article EN Science 2018-10-11

Interface charge transfer and electron-phonon coupling have been suggested to play a crucial role in the recently discovered high-temperature superconductivity of single unit-cell FeSe films on SrTiO3. However, their origin remains elusive. Here, using ultraviolet photoemission spectroscopy (UPS) element-sensitive X-ray (XPS), we identify strengthened Ti-O bond that contributes interface enhanced unveil band bending at FeSe/SrTiO3 leads from SrTiO3 films. We also observe renormalization...

10.1038/s41467-017-00281-5 article EN cc-by Nature Communications 2017-08-02

Abstract The transfer‐free direct growth of high‐performance materials and devices can enable transformative new technologies. Here, room‐temperature field‐effect hole mobilities as high 707 cm 2 V −1 s are reported, achieved using transfer‐free, low‐temperature (≤120 °C) helical tellurium (Te) nanostructure on SiO /Si. Te nanostructures exhibit significantly higher device performance than other grown semiconductors, it is demonstrated that through careful control the process, be...

10.1002/adma.201803109 article EN Advanced Materials 2018-07-18

We report the time-resolved excited state ultrafast dynamics of single unit cell (1 UC) thick FeSe films on ${\mathrm{SrTiO}}_{3}$ (STO), with FeTe capping layers. By measuring photoexcited quasiparticles' density and lifetime, we unambiguously identify a superconducting (SC) phase transition, transition temperature ${T}_{c}$ 68 $(\ensuremath{-}5/+2)\text{ }\text{ }\mathrm{K}$ SC gap $\mathrm{\ensuremath{\Delta}}(0)=20.2\ifmmode\pm\else\textpm\fi{}1.5\text{ }\mathrm{meV}$. The obtained...

10.1103/physrevlett.116.107001 article EN Physical Review Letters 2016-03-08

To support the ever-growing demand for faster, energy-efficient computation, more aggressive scaling of transistor is required. Two-dimensional (2D) transition metal dichalcogenides (TMDs), with their ultra-thin body, excellent electrostatic gate control, and absence surface dangling bonds, allow extreme channel region without compromising mobility. New device geometries, such as stacked nanosheets multiple parallel channels carrier flow, can facilitate higher drive currents to enable...

10.1063/5.0133064 article EN Applied Physics Letters 2023-04-17

Alkali-metal (potassium) adsorption on FeSe thin films with thickness from two unit cells (UC) to 4-UC SrTiO3 grown by molecular beam epitaxy is investigated a low-temperature scanning tunneling microscope. At appropriate potassium coverage (0.2-0.3 monolayer), the spectra of all exhibit superconducting-like gap larger than 11 meV (five times value bulk FeSe), and distinct features characteristic phonon modes at 21 meV. The results reveal critical role interface enhanced electron-phonon...

10.1103/physrevb.93.020507 article EN Physical review. B./Physical review. B 2016-01-26

Near-perfect light absorbers (NPLAs), with absorbance, [Formula: see text], of at least 99%, have a wide range applications ranging from energy and sensing devices to stealth technologies secure communications. Previous work on NPLAs has mainly relied upon plasmonic structures or patterned metasurfaces, which require complex nanolithography, limiting their practical applications, particularly for large-area platforms. Here, we use the exceptional band nesting effect in TMDs, combined...

10.1038/s41467-023-39450-0 article EN cc-by Nature Communications 2023-07-01

We report high temperature superconductivity in one unit-cell (1-UC) FeSe films grown on SrTiO3 (STO)(110) substrate by molecular beam epitaxy. By in-situ scanning tunneling microscopy measurement, we observe a superconducting gap as large 17 meV the 1-UC films. Transport measurements FeSe/STO(110) capped with FeTe layers reveal an onset transition (TC) of 31.6 K and upper critical magnetic field 30.2 T. also find that TC can be further increased external electric although effect is weaker...

10.1063/1.4950964 article EN Applied Physics Letters 2016-05-16

A single unit cell FeTe${}_{1-x}$Se${}_{x}$ film consisting of a flat square Fe layer sandwiched between two Se/Te monolayers shows fully gapped tunneling spectrum with superconducting gaps up to ~16.5 meV, nearly ten times the gap value an optimally doped bulk crystal. Compared ${T}_{c}$~14.5 K FeTe${}_{0.6}$Se${}_{0.4}$, meV could correspond transition temperature higher than boiling liquid-nitrogen (77 K). Initial $e\phantom{\rule{0}{0ex}}x$...

10.1103/physrevb.91.220503 article EN Physical Review B 2015-06-17

Interface-enhanced high-temperature superconductivity in one unit-cell (UC) FeSe films on SrTiO3(001) (STO) substrate has recently attracted much attention condensed matter physics and material science. By combined in-situ scanning tunneling microscopy/spectroscopy (STM/STS) ex-situ transmission electron microscopy (STEM) studies, we report atomically resolved structure including both lattice constants actual atomic positions of the FeSe/STO interface under non-superconducting...

10.1088/2053-1583/3/2/024002 article EN 2D Materials 2016-03-24

We report the superconductivity evolution of one unit cell (1-UC) and 2-UC FeSe films on SrTiO3(001) substrates with potassium (K) adsorption. By in situ scanning tunneling spectroscopy measurement, we find that 1-UC is continuously suppressed increasing K coverage, whereas non-superconducting become superconducting a gap ~17 meV or ~11 depending whether underlying are not. This work explicitly reveals interface electron-phonon coupling strongly related to charge transfer at FeSe/STO plays...

10.1103/physrevb.92.180507 article EN Physical Review B 2015-11-13

Abstract The dehydration of alcohol/water mixtures using pervaporation membranes requires less energy than is required by conventional separation technologies. In this paper, we report electrostatically enhanced graphene oxide (GO) for the highly efficient C 2 –C 4 mixtures. Positively charged molecules were introduced as interlayer negatively GO layers via layer‐by‐layer assembly, thereby creating an electrostatic attraction that drives assembly nanosheets into ordered channels. effects...

10.1002/aic.17170 article EN AIChE Journal 2021-01-15
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