The authors present experimental results, and a supporting theory, showing that one-dimensional system in which transport is ballistic possesses quantised resistance, h/2ie2, where i the number of occupied 1D sub-bands spin degeneracy two. A short narrow channel defined 2DEG GaAs-AlGaAs heterojunction as width changed, pass through Fermi energy resistance jumps between values. value derived accuracy quantisation discussed. effect can be strong at temperatures approximately 0.1 K, with up to...

We have investigated the behavior of a laterally confined quantum dot in close proximity to one-dimensional channel separate electrical circuit. When this is biased tunneling regime resistance very sensitive electric fields, and therefore potential variations on when it showing Coulomb blockade oscillations. This effect can be calibrated directly, allowing charging energy measured. also found activation transport through much lower than expected.

We have investigated coherent time evolution of pseudomolecular states an isolated (leadless) silicon double quantum dot, where operations are carried out via capacitively coupled elements. Manipulation is performed by short pulses applied to a nearby gate, and measurement single-electron transistor. The electrical isolation this qubit results in significantly longer coherence than previous reports for semiconductor charge qubits realized artificial molecules.

In this paper, we demonstrate a double nanoimprinting process that allows the formation of nanostructured polymer heterojunctions composition and morphology can be selected independently. We fabricated photovoltaic (PV) devices with extremely high densities (1014/mm2) interpenetrating nanoscale columnar features in active blend layer. The smallest feature sizes are as small 25 nm on 50 pitch, which results spacing at or below exciton diffusion length. Photovoltaic based double-imprinted...

Overcoming the trade-offs among power consumption, fabrication cost, and signal amplification has been a long-standing issue for wearable electronics. We report high-gain, fully inkjet-printed Schottky barrier organic thin-film transistor amplifier circuit. The efficiency is 38.2 siemens per ampere, which near theoretical thermionic limit, with an ultralow consumption of <1 nanowatt. use source gave geometry-independent electrical characteristics accommodated large dimensional variation in...

In order to utilize the unique properties of carbon nanotubes in microelectronic devices, it is necessary develop a technology which enables high yield, uniform, and preferential growth perfectly aligned nanotubes. We demonstrate such by using plasma-enhanced chemical-vapor deposition (PECVD) By patterning nickel catalyst, we have deposited uniform arrays single free-standing at precise locations. PECVD process, however, detrimental amorphous (a-C) also over regions substrate surface where...

We compare the field emission characteristics of dense (109 nanofibers/cm2), sparse (107 and patterned arrays (106 nanofibers/cm2) vertically aligned carbon nanofibers on silicon substrates. The were prepared using plasma-enhanced chemical vapor deposition acetylene ammonia gases in presence a nickel catalyst. demonstrate how density can be varied by reducing yield through interaction with diffusion layer or direct lithographic patterning catalyst to precisely position each nanofiber. array...

The ability to grow carbon nanotubes/nanofibres (CNs) with a high degree of uniformity is desirable in many applications. In this paper, the structural CNs produced by plasma enhanced chemical vapour deposition evaluated for field emission When single isolated were deposited using technology, structures exhibited remarkable terms diameter and height (standard deviations 4.1 6.3% respectively average height). lithographic conditions achieve yield are also discussed. Using statistics, we show...

We demonstrate the fabrication and operation of a carbon nanotube (CNT) based Schottky diode by using Pd contact (high-work-function metal) an Al (low-work-function at two ends single-wall CNT. show that it is possible to tune rectification current-voltage (I-V) characteristics CNT through use back gate. In contrast standard gate field-effect transistors (FET) same-metal source drain contacts, asymmetrically contacted operates as directionally dependent FET when gated. While measuring...

Electromechanical switching devices have been fabricated successfully employing vertically grown multiwalled carbon nanotubes (MWCNTs) from the prepatterned catalyst dots on patterned device electrodes. The show various interesting characteristics depending length and number of MWCNTs used. design not only simplifies fabrication process, but also improves integration density greatly. has a great potential in realizing technically viable nanoelectromechanical systems, such as switch, memory,...

The authors present experimental results showing that the quantised nature of ballistic resistance in narrow channels is preserved when electrons pass ballistically through two constrictions. As width each channel varied independently, pair equal to narrowest; this explained by conservation quantum (sub-band) number. absolute quantisation not as accurate observed a single constriction and modified an anomalous whose origin discuss.

We report on the fabrication of 3–4 nm wide continuous lines in a positive tone electron beam resist poly(methylmethacrylate) solid substrate. This narrow linewidth was made possible through use nonsolvent-based developer system, water:isopropyl alcohol, together with ultrasonically-assisted development, which reduced effective development time thus limiting swelling unexposed resist. combination solvent system and technique results smaller radius gyration developing polymer molecules wider...

The monolayer deposition of nanoscale colloidal particles (Au citrate sols) was demonstrated by employing an aminofunctional silane [3-(2-Aminoethlyamino) propyltrimethoxysilane] as a coupling agent. compatibility this Au method with conventional electron beam lithography techniques examined, and the two-dimensional patterning demonstrated. Using fabrication method, proposal for single device structure based on (2 nm diameter) gold made.

A field effect transistor (FET) using a zinc oxide nanowire with significantly enhanced performance is demonstrated. The device consists of single and self-aligned gate electrodes well defined nanosize gaps separating them from the suspended nanowire. fabricated FET exhibits excellent transconductance 3.06μS, mobility 928cm2∕Vs, an on/off current ratio 106. electrical characteristics are best obtained to date for ZnO transistor. has n-type channel operates in enhancement mode. results close...

We demonstrate the production of integrated-gate nanocathodes which have a single carbon nanotube or silicon nanowire/whisker per gate aperture. The fabrication is based on technologically scalable, self-alignment process in lithographic step used to define gate, insulator, and emitter. nanotube-based gated nanocathode array has low turn-on voltage 25 V peak current 5 μA at 46 V, with 10 nA (i.e., 99% transparency). These operating cathodes are potentially useful as electron sources for...

An ultrasmall single-electron transistor has been made by scaling the size of a fin field-effect structure down to an ultimate limiting form, resulting in reliable formation sub-5 nm Coulomb island. The charge stability data feature first exhibition three and half clear diamonds at 300 K, each showing high peak-to-valley current ratio. Its charging energy is estimated be more than one order magnitude larger thermal room-temperature. hybrid literal gate integrated this combined with displays...

It has been long known that low molecular weight resists can achieve a very high resolution, theoretically close to the probe diameter of electron beam lithography (EBL) system. Despite technological improvements in EBL systems, advances have lagged behind. Here we demonstrate low-molecular-mass single-source precursor resist (based on cadmium(II) ethylxanthate complexed with pyridine) is capable achieving resolution (4 nm) closely matches measured (∼3.8 nm). Energetic electrons enable...

The authors present results on the quantum conduction properties of a one-dimensional channel, 0.7 mu m long and 0.3 wide, containing two potential barriers. barriers are 0.5 apart 0.18 wide defined by gate high-mobility GaAs-AlGaAs heterojunction. device behaves like ballistic point contact with narrow in middle. Reducing width electrostatic squeezing reveals quasi-periodic peaks resistance due to resonance. At higher temperatures effect is removed so that disappear leaving quantised...

Fabrication and characterization of a nanoelectromechanical switching device consisting suspended multiwalled carbon nanotube self-aligned electrodes is reported. The has triode structure designed so that mechanically switched to one two by repulsive electrostatic forces between the other electrode. Carbon nanotubes are dispersed on an SiO2 coated Si wafer their locations recorded using scanning electron microscope mapping process. Contact deflection formed process comprising beam...

The subthreshold slope, transconductance, threshold voltage, and hysteresis of a carbon nanotube field-effect transistor (CNT FET) were examined as its configuration was changed from bottom-gate exposed channel, covered channel to top-gate FET. An individual single wall CNT grown by chemical vapor deposition gate while determining characteristics ensure that the measurements not function different chirality or diameter CNTs. FET utilized 900nm SiO2 insulator. This then with TiO2 form...

Abstract The nanoscale morphology in polymer:PCBM based photovoltaic devices is a major contributor to overall device performance. disordered nature of the phase‐separated structure, combination with small length scales involved and inherent difficulty reproducing exact morphologies when spin‐coating annealing thin blend films, have greatly hampered development detailed understanding how impacts photo­voltaic functioning. In this paper we demonstrate double nano­imprinting process that...

A vertically aligned carbon nanotube mesh emitter array has been fabricated and tested, giving a current density of up to 1.5 A/cm2, threshold field V/μm for 1 mA/cm2. Low temperature growth is used fabricate the arrays significantly reducing cost fabrication large area electron emitters. This system exhibits ultralong lifetime.

We report on transport measurement performed a room-temperature-operating ultrasmall Coulomb blockade devices with silicon island of sub5 nm. The charge stability at 300K exhibits substantial change in slopes and diagonal size each successive diamond, but remarkably its main feature persists even low temperature down to 5.3K except for additional peak splitting. This key fine structures peaks are successfully modeled by including the interplay between interaction, valley splitting, strong...