A5042545539- Gas Sensing Nanomaterials and Sensors
- ZnO doping and properties
- Analytical Chemistry and Sensors
- Advanced Chemical Sensor Technologies
- Transition Metal Oxide Nanomaterials
- Advanced Photocatalysis Techniques
- Acoustic Wave Resonator Technologies
- Ferroelectric and Piezoelectric Materials
- Electrical and Thermal Properties of Materials
- Microwave Dielectric Ceramics Synthesis
- Ga2O3 and related materials
- Electrochemical Analysis and Applications
- Thin-Film Transistor Technologies
- Higher Education and Teaching Methods
- Chaos-based Image/Signal Encryption
- Experimental Learning in Engineering
- GaN-based semiconductor devices and materials
- Mathematical Dynamics and Fractals
- TiO2 Photocatalysis and Solar Cells
- Electrochemical sensors and biosensors
- Cellular Automata and Applications
- Thermal properties of materials
Dalian Maritime University
2015-2022
Size-controllable tin oxide (SnO2) quantum dots (QDs) in aqueous solution were prepared by using stannous chloride and thiourea as source materials the hydrothermal treatment was employed for size control during self-assembly of SnO2 QDs. The effects on structural optical properties QDs discussed. confirmed to be rutile structure with (2 0 2), 1 1) (3 3 0) facets observed. crystal lattice constants changed their dimensions grain growth secondary boundaries appeared if over 7 nm. composition...
Tin oxide quantum dots (QDs) were prepared in aqueous solution from the precursor of tin dichloride via a simple process hydrolysis and oxidation. The average grain size QDs was 1.9 nm. hydrothermal treatment used to control size, which increased 2.7 4.0 nm when operating temperatures 125 225 °C employed, respectively. X-ray photoelectron spectroscopy (XPS) spectrum diffraction analysis (XRD) pattern confirmed rutile SnO₂ system for QDs. A band gap 3.66 eV evaluated UV-VIS absorption...
Tin oxide quantum dots were synthesized in aqueous solution via a simple hydrolysis and oxidation process. The morphology observation showed that the had an average grain size of 2.23 nm. rutile phase SnO2 was confirmed by structural compositional characterization. fluorescence spectroscopy used to detect heavy metal ions Cd2+, Fe3+, Ni2+ Pb2+, which caused quenching effect photoluminescence. response 2.48 100 ppm Ni2+. prepared exhibited prospective detection contaminated water, including...
The thickness effect on ultraviolet, visible and near-infrared (UV–Vis-NIR) light absorption of Mo-modified tin oxide (SnO2) thin films is investigated by the first principle calculation based density functional theory. electronic structures optical properties pristine, defective, Mo-doped Mon (n = 1, 2, 3, 4) cluster adsorbed SnO2 (1 1 0) surfaces with film from 0.594 to 3.273 nm are discussed. results show that pristine semiconductor can hardly absorb Vis-NIR light. peaks in region...
The influence of oxygen vacancy behaviors during a cooling process in semiconductor gas sensors is discussed by the numerical analysis method based on gradient-distributed model. A diffusion equation established to describe vacancies, which follows effects and exclusion process. Numerical introduced find accurate solutions equation. illustrate distribution profiles, are dependent rate as well temperature interval gas-sensing characteristics reduced resistance response calculated. Both them,...
Background: Oxygen behaviors play essential roles in the receptor function gassensing mechanism of SnO 2 semiconductors, size effect which is a fundamental phenomenon for development gas sensors. Objective: This article discusses on oxygen gas-sensitive SnO2 semiconductor. Methods: : The first principle calculation was used to investigate formation vacancies and adsorption species electrical characteristics conductivity, band gap electron transfer crystallites were analyzed by density states...
Tin oxide-based thin films are deposited by ultrasonic spray pyrolysis technology, in which Cu addition is introduced to enhance the gas sensing performance H2S detection. The porous and comprise nano-sized crystallites. One of Cu-containing film sensors demonstrates a fast significant response gas. values power law exponent n calculated discuss sensitivity sensors, significantly promoted additive. Cu-doped SnO2 determined two mechanisms. normal mechanism grains, other caused transformation...
The oxygen vacancies (VO) play an essential role in the gas-sensing mechanism of semiconductor devices. A diffusion equation is established to describe VO behaviors during a cooling process based on model gradient-distributed vacancies. Numerical solutions are found illustrate distribution grains. gradient negative dependence rate, which also influences average density depletion layer. migration could be interrupted by quenching and it restarted re-annealing process. distributing illustrated...
Stannous chloride and thiourea are used as source materials to prepare SnO2 quantum dots in the aqueous solution by a facile hydrolysis-oxidation process. The have an average size of 1.9 nm with good dispersibility well long-term stability, validated be effective photocatalyst for degradation organic oil pollutants contaminated water. pollutant is removed exposed ultraviolet-visible irradiation at room temperature. optimized condition concluded dot concentration 10-3 mol/L speed reaches...
The roles of depletion layer width in semiconductor gas sensors are quantitatively discussed based on the model gradient-distributed oxygen vacancies. Several literatures employed to provide experimental basis relationship between and sensing characteristics devices. Four series illustrated their widths controlled by three different techniques, such as controlling dopant amount, sintering various procedures usage dopants. shows a good applicability analyzing sensors, long grain radius is...
Highly donor-doped ceramics with composition of Ba0.984Y0.016TiO3 were prepared for thermistors positive temperature coefficient resistivity (PTCR) via a route solid reaction, reducing sintering and aerial oxidation. The effects Mn additive investigated on the ceramic characteristics composition, morphology electrical properties. incorporation affected little but resulted in an obvious change morphology, which illustrated average grain size 1.16, 1.65 1.01 μm addition amount 0, 0.0005...
The mixed teaching mode plays an increasingly important role in stimulating students’ interest and autonomy learning, strengthening learning ability. full integration of microelectronics can not only achieve the objectives smoothly, but also enable students to deepen their understanding memory relevant knowledge with help diversified interesting methods. Therefore, this paper takes course as example practice explore effective ways carry out mode. Teachers should make use online offline...