Abstract An ultra-fast physical random number generator is demonstrated utilizing a photonic integrated device based broadband chaotic source with simple post data processing method. The compact implemented by using monolithic dual-mode amplified feedback laser (AFL) self-injection, where robust signal RF frequency coverage of above 50 GHz and flatness ±3.6 dB generated. By 4-least significant bits (LSBs) retaining from the 8-bit digitization waveform, sequences bit-rate up to 640 Gbit/s...

We report a 10-GHz ultrashort pulse and optical comb generation using quantum well (QW) semiconductor mode-locked laser (SMLL). With dilute waveguide design, pulses with widths as short 726 fs were also obtained from SMLL without any compression, the shortest width of 576 was achieved after compression. Direct flat −3-dB bandwidth 9.92 nm (>125 lines in span 1.24 THz) −20-dB 19.22 (>240 2.4 obtained. A further extension by pumping highly nonlinear fiber (HNLF) via SMLL. 89.4 usable over 110...

The dynamics of monolithically integrated amplified feedback lasers (AFL) is investigated through numerical simulation and experimental verification. period-doubling route to chaos high-frequency microwave generation are demonstrated simulation. Then, we design fabricate AFLs. Mappings dynamic states oscillation frequency in the parameter space phase section current I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P</sub> amplifier...

A frequency stabilization scheme for a wideband-tunable optoelectronic oscillator (OEO) based on fundamental and subharmonic RF injection locking is proposed, achieving tuning range of 2–22 GHz with low phase noise. The injection-locked performance the OEO using signal its 1/n investigated. achieves noise &lt;−130 dBc/Hz @ 10 kHz offset across entire range. An examination behavior at different orders reveals that achieve five-order-of-magnitude improvement in Allan variance (0.1 s)...

A solitary monolithic integrated semiconductor laser (MISL) chip with a size of 780 micrometer is designed and fabricated for broadband chaos generation. Such MISL consists DFB section, phase section an amplification section. Test results indicate that under suitable operation conditions, this can be driven into chaos. The generated covers RF frequency range, limited by our measurement device, 26.5GHz, possesses significant dimension complexity. Moreover, the routes out are also...

A 1.55-μ m hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method. Two Si blocking stripes, each with an excess-metals accommodated space, were used to separate optical coupling area and areas. In such a structure, air gap between InGaAsP structure waveguide has been reduced be negligible. The operates threshold current density of 1.7 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> slope efficiency 0.05...

A tunable optical microwave generation scheme using self-injection locked monolithic dual-wavelength amplified feedback laser (AFL) is proposed and experimentally demonstrated. By a dual-loop scheme, the 3-dB linewidth of output resulting from mode beating reduced MHz to kHz scale. Optical 30 38 GHz with below 2

An eight-channel monolithically integrated complex-coupled distributed-feedback laser array based on sampled gratings has been designed and fabricated. Selective lasing at different wavelengths is obtained. The frequency separation between each adjacent channel about 200 GHz. typical threshold current 30 40 mA. optical output power of 10 mW an injection 100 continuous tuning emission wavelength with injected currents also demonstrated.

We present an InP based distributed Bragg reflector (DBR) laser transmitter which has a wide wavelength tuning range and high chip output power for division multiplexing passive optical network (WDM-PON) applications. By butt-jointing InGaAsP with 1.45 µm emission as the material of grating section, can be tuned over 13 nm by DBR current. Accompanied varying temperature, further enlarged to 16 nm. With help integrated semiconductor amplifier (SOA), largest is 30 mW. The electroabsorption...

We report widely tunable two-section distributed Bragg reflector (DBR) lasers, which have InGaAlAs multiple quantum wells (MQWs) as the gain material. By butt-jointing InGaAsP, has a photoluminescence wavelength of 1.4 μm material DBR section, tuning range 12 nm can be obtained by current injection into section. The direct modulation bandwidth lasers is greater than 10 GHz over entire up to 40°C. Compared with InGaAsP having same structure, smaller variations in both threshold and slope...

We report the fabrication of a first electro-absorption modulated widely tunable DBR lasers (TEML) based on InGaAlAs multi-quantum well (MQW) material, which is superior than InGaAsP MQWs for both modulators and lasers. The device fabricated by using butt-joint material growth technology operates at wavelength 1.5 μm. An over 12 nm tuning range can be obtained. characteristic temperature 83 K, notably higher that laser MQWs. At 25 ℃, modulator (EAM) has small signal modulation bandwidth...

A 40-Gb/s monolithically integrated transmitter containing an InGaAsP multiple-quantum-well electroabsorption modulator (EAM) with lumped electrode and a distributed-feedback semiconductor laser is demonstrated. Superior characteristics are exhibited for the device, such as low threshold current of 20 mA, over 40-dB sidemode suppression ratio at 1550 nm, more than 30-dB DC extinction when coupled into single-mode fiber. By adopting deep ridge waveguide planar structures combined buried...

A widely tunable optoelectronic oscillator (OEO) based on a directly modulated monolithic integrated dual-mode amplified feedback laser (AFL) is proposed and experimentally demonstrated. In this OEO scheme, the functions of source, intensity modulator, high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Q$</tex-math></inline-formula> RF filter are all realized through an AFL chip. On one hand, beating...

A widely tunable optoelectronic oscillator (OEO) based on a self-injection-locked monolithic dual-mode amplified feedback laser (DM-AFL) is proposed and experimentally demonstrated. In the OEO structure, DM-AFL functions as an active microwave photonic filter (MPF). By tuning injection current applied amplifier section of AFL, outputs ranging from 32 to 41 GHz single sideband phase noises below -97 dBc/Hz at 10 kHz offset carriers were realized.

We have fabricated <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.3~\mu \text{m}$ </tex-math></inline-formula> band InP based high speed directly modulated distributed feedback (DFB) lasers having passive Bragg reflector (DBR). Because of the feed back from DBR section, modulation bandwidth is over 25 GHz, which notably larger than 19 GHz for a normal single section DFB laser. The devices has same...

We experimentally demonstrate a compact, long-range, high-resolution chaotic correlation optical time-domain reflectometry based on monolithic integrated laser (MICL). The MICL can directly generate broadband signal covering RF frequency range of over 40 GHz. Multi-reflection events be precisely located in detection ∼47 km with range-independent resolution 2.6 mm.

We propose and demonstrate a novel broadband chaos generator using monolithic-integrated dual-mode amplified feedback laser (AFL) with an optical feedback. An external fiber loop is used to drive free-running AFL into state. The intercoupling between the two chaotic oscillation originated from modes produces signal flat RF spectrum. A robust that covers frequency of over 50 GHz, bandwidth 32 effective 28 flatness 6.3 dB, experimentally achieved.

We report the fabrication of widely tunable ridge waveguide distributed Bragg reflector (DBR) lasers with InGaAsP butt-joint as grating material.The shape interface is found to have significant effect on properties lasers.It shown that irregular mode jumps during wavelength tuning can be avoided by a V-shaped interface.From fabricated device, 23 channels 0.8 nm spacing and greater than 35 dB side suppression ratios are obtained.The different characteristics previously reported buried stripe...

We demonstrate a widely tunable and high-modulation-bandwidth distributed Bragg reflector (DBR) laser. With the selected butt-joint material (λg = 1.44 μm) angle (45°) for grating section, tuning range of 13.88 nm with 19 consecutive channels is obtained two-section DBR Furthermore, small-signal modulation bandwidth 16 GHz in-band flatness ±3 dB realized at 10 °C. A uniform more than 13 ten 25 Meanwhile, laser shows high linearity, an input 1-dB compression point 17 dBm third-order intercept 30 GHz.

We report a novel high speed directly modulated dual wavelength 1.3 μm laser for THz communication applications. The has compact size and simple structure, which consists DFB section passive distributed Bragg reflector (DBR) section, leading to device fabrication procedure similar that of normal laser. an over 26 GHz modulation bandwidth in the working mode, facilitates data onto wave. NRZ modulations at up 50 Gb/s have been demonstrated successfully. bit error rate (BER) performances under...