A5101860656- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Silicon Carbide Semiconductor Technologies
- Physics of Superconductivity and Magnetism
- Quantum many-body systems
- Semiconductor materials and devices
- Quantum and electron transport phenomena
- Theoretical and Computational Physics
- Magnetism in coordination complexes
- ZnO doping and properties
- Topological Materials and Phenomena
- Semiconductor Quantum Structures and Devices
- Metal complexes synthesis and properties
- Quantum Computing Algorithms and Architecture
- Chemical Synthesis and Analysis
- Computability, Logic, AI Algorithms
- Industrial Vision Systems and Defect Detection
- Data Analysis with R
- Anomaly Detection Techniques and Applications
- DNA and Nucleic Acid Chemistry
- Lung Cancer Treatments and Mutations
- Biomedical Text Mining and Ontologies
- Diamond and Carbon-based Materials Research
- Synthesis of Organic Compounds
- Stochastic processes and statistical mechanics
Jadavpur University
2022
Indian Institute of Technology Kharagpur
2022
University of California, Davis
2016-2019
Intel (United States)
2018
St. Boniface Hospital
2018
University of Manitoba
2018
Indian Association for the Cultivation of Science
2013
Memorial University of Newfoundland
1987-1989
A normally OFF trench current aperture vertical electron transistor (CAVET) was designed and successfully fabricated with Mg-doped p-GaN blocking layers. The buried GaN activated using a postregrowth annealing process. source-to-drain body diode showed an excellent p-n junction characteristics, over 1 kV, sustaining maximum electric field of 3.8 MV/cm. Three-terminal breakdown voltages trench-CAVETs, measured up to 225 V, were limited by dielectric breakdown. This paper highlights the...
In this letter, a GaN-based current aperture vertical electron transistor (CAVET) with p-type gate layer and an implantation-based blocking structure is presented. The devices measured showed breakdown voltage of 450 V no dispersion. factors limiting higher voltages in these were carefully studied discussed. grown on sapphire relied box-shaped Mg implanted scheme. This the first demonstration CAVET, respectable on-state characteristics.
The rapid development of RF power electronics requires amplifier operating at high frequency with output power. GaN-based HEMTs as devices have made continuous progress in the last two decades showing great potential for working up to G band range. However, vertical structure is preferred obtain higher In this paper, we designed and fabricated GaN static induction transistor using self-aligned technology, which was accomplished mainly by a SiO <sub...
Motivated by recent studies of circuit complexity in weakly interacting scalar field theory, we explore the computation $\mathcal{Z}_2$ Even Effective Field Theories ($\mathcal{Z}_2$ EEFTs). We consider a massive free theory with higher-order Wilsonian operators such as $\phi^{4}$, $\phi^{6}$ and $\phi^8.$ To facilitate our regularize putting it on lattice. First, simple case two oscillators later generalize results to $N$ oscillators. The study has been carried out for nearly Gaussian...
We report on the first observation of avalanche electroluminescence resulting from band-to-band recombination (BTBR) electron hole pairs at breakdown limit Gallium Nitride p-n diodes grown homo-epitaxially single crystalline GaN substrates. The demonstrated a near ideal electric field 3 MV cm−1 with (EL) demonstrating sharp peaks emission energies and band gap GaN. high critical field, material GaN, was achieved by generating smooth curved mesa edge low plasma damage, using etch engineering...
We report the first demonstration of Nitrogen polar (N-polar) GaN current aperture vertical electron transistor with a blocking electric field over 2.9 MV/cm. The devices were grown by metalorganic chemical vapor deposition on c-plane sapphire substrate. fabrication involved maskless planar regrowth very thin-AlN layer above layer, which induced two-dimensional gas (2DEG) in channel, and also prevented out-diffusion activated Mg ions into channel layer. alloyed source drain ohmic contacts...
The extracted minority carrier lifetime in the n-layer of a diamond p-i-n diode on (111)- oriented is presented here using reverse recovery method. storage time delay and current varied as function ramp for applied signal. was zero by considering capacitive overshoot effect that can occur during measurement. holes measured to be ~6 ns. results obtained were compared diodes (100)- where n-side fully depleted. found negligible case. Further, resolved cathodoluminescence measurements support from
The development of high‐quality gate dielectric/III‐N semiconductor interfaces is indispensable to achieve high performance GaN‐based electron mobility transistors (HEMTs). In this work, we present improved between SiO 2 and GaN (or AlGaN) with Al O 3 insertion layer deposited by plasma‐enhanced atomic deposition (PEALD). Interface state density (D it ) border trap (N bt were characterized using UV‐assisted C–V measurement on metal‐oxide‐semiconductor capacitors (MOSCAPs). exhibited...
A simple electrical method to extract device channel thermal resistance in transistors is presented here. The compares the dc discrete-pulsed characteristics and estimates effective increase temperature under biasing conditions. Using I versus t method, self-heating of effectively eliminated, which helps avoiding underestimation resistance, therefore, making it possible perform measurements at high power operation. This technique was applied lateral GaN HEMTs with three different substrates...
We report the binding of testo and testo–Pt(II) complexes (testosterone derivatives) with tRNA in aqueous solution at physiological pH. Thermodynamic parameter ΔH0 −8 to −3 (kJ mol−1), ΔS0 35 18 (J mol−1K−1) ΔG0 −14 −13 mol−1) other spectroscopic results showed drug–tRNA occurs via ionic contacts forming more stable comparison testo: Ktesto–Pt(II)–tRNA= 3.2 (± 0.9) × 105 M−1 > Ktesto-tRNA= 2.1 0.7) M−1. Molecular modeling multiple sites for on molecule. Some useful molecular descriptors are...
Al<sub>2</sub>O<sub>3</sub> has been an attractive gate dielectric for GaN power devices owing to its large conduction band offset with (~2.13eV), relatively high constant (~9.0) and breakdown electric field (~10 MV/cm). Due exceptional control over film uniformity deposition rate, atomic layer (ALD) widely used deposition. The major obstacle ALD on is interface-state density (Dit) caused by incomplete chemical bonds, native oxide impurities at the Al2O3/GaN interface. Therefore, appropriate...
Knowledge distillation, where a small student model learns from pre-trained large teacher model, has achieved substantial empirical success since the seminal work of \citep{hinton2015distilling}. Despite prior theoretical studies exploring benefits knowledge an important question remains unanswered: why does soft-label training require significantly fewer neurons than directly neural network with hard labels? To address this, we first present motivating experimental results using simple...
The higher-order corner modes for quantum anomalous Hall insulators in $C_3$ symmetry broken honeycomb lattice have been engineered recently. Here we consider an extended Haldane model presence of inversion breaking sub-lattice mass, time-reversal Zeeman field and spin-orbit coupling interaction where find that only the spin insulator can host second-order dipolar phase while remaining two first-order topological phases do not morph into latter. Remarkably, four-fold degeneracy zero-energy...
Crowdsourcing is a popular method used to estimate ground-truth labels by collecting noisy from workers. In this work, we are motivated crowdsourcing applications where each worker can exhibit two levels of accuracy depending on task's type. Applying algorithms designed for the traditional Dawid-Skene model such scenario results in performance which limited hard tasks. Therefore, first extend allow vary unknown Then propose spectral partition tasks After separating type, any algorithm (i.e.,...
In this work, a study of two different types current aperture vertical electron transistor (CAVET) with ion-implanted blocking layer are presented. The device fabrication and performance limitation CAVET dielectric gate is discussed, the breakdown limiting structure evaluated using on-wafer test structures. limited to 50V, while was able withstand over 400V. To improve performance, an alternative p-GaN instead designed realized. pGaN gated increased voltage Measurement structures on wafer...
Gallium nitride (GaN) based transistors have been of interest to power electronics community because their high breakdown voltage, sheet carrier density, and the saturation velocity GaN. The low switching losses GaN enable high-frequency operation which reduces bulky passive components with negligible change in efficiency [1,2]. most established electronic devices are fabricated on Ga-polar orientation Recently, N-polar being explored for frequency applications due advantages over Ga-face,...
We construct and study a time reversal broken tight binding model on diamond lattice with complex next-nearest-neighbour hopping which can be thought of as generalisation two dimensional Haldane in three dimension. The also breaks inversion symmetry owing to sub-lattice dependent chemical potential. calculate the spectrum find existence six pairs anisotropic gapless points linear dependence momentum. coordinates are ($2 \pi, \pi \pm k_0,0),~ (2 k_0,2 \pi)$ their possible permutations ....
We have studied the revival of Hofstadter butterfly due to competition between disorder and electronic interaction using mean field approximation unrestricted Hartree Fock method at zero temperature for two dimensional square honeycomb lattices. Interplay correlation nullify each other is corroborated by fact that lattice needs more strength owing its less co-ordination number which enhances effect disorder. The extent better in than higher coordination number. also investigated study...
In this work, we explore the effects of a quantum quench on circuit complexity for quenched field theory having weakly coupled quartic interaction. We use invariant operator method, under perturbative framework, computing ground state system}. give analytical expressions specific reference and target states using system. Using particular cost functional, show computation interacting theory. Further, numerical estimate with respect to rate, $δt$ two oscillators. The parametric variation...