A generic process for fabricating vertical surround-gate field-effect transistors (FETs) from epitaxially grown silicon nanowires is presented. The demonstrated using n-type Si on a p-type substrate in ultrahigh vacuum Au catalyst. consists of various deposition and etching steps; no chemical or mechanical polishing required. Individual as well arrays FETs can be fabricated.

This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs with metallic source and drain contacts, conventional-type doped NW segments as electrodes, and, finally, two new that enable steep turn-on characteristics, namely, impact ionization FETs tunnel NW-FETs. As it turns out, are, to a large extent, determined by geometry, dimensionality transport, way making...

Abstract Imaging temperature fields at the nanoscale is a central challenge in various areas of science and technology. Nanoscopic hotspots, such as those observed integrated circuits or plasmonic nanostructures, can be used to modify local properties matter, govern physical processes, activate chemical reactions trigger biological mechanisms living organisms. The development high-resolution thermometry techniques essential for understanding thermal non-equilibrium processes during operation...

III–V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI) substrates by template-assisted selective epitaxy (TASE) using metal organic chemical vapor deposition. Single crystal (InAs, InGaAs, GaAs) nanostructures, such as nanowires, nanostructures containing constrictions, and cross junctions, well 3D stacked nanowires directly obtained epitaxial filling of lithographically defined oxide templates. The benefit TASE is exemplified the straightforward fabrication...

Charge-carrier transport through an individually contacted bipyridyl-dinitro oligophenylene-ethynylene dithiol molecule (BPDN-DT, see picture) and a BP-DT was studied using the mechanically controllable break-junction technique. BPDN-DT exhibits voltage-induced switching between two distinct conductive states, in contrast to BP-DT. Molecular electronics is aimed at use of small ensembles or even individual molecules as functional building blocks electronic circuits.1 In recent years, devices...

A numerical study of space charge effects in multilayer organic light-emitting diodes (OLEDs) is presented. The method solving the coupled Poisson and continuity equations, previously established for single-layer polymer LEDs, has been extended to treat internal interfaces. In addition, we consider transient current electroluminescence response. We discuss accumulation charges at interfaces their signature response as well electric field distribution. Comparison experimental data a typical...

Transient electroluminescence (EL) from single- and multilayer organic light-emitting diodes (OLEDs) was investigated by driving the devices with short, rectangular voltage pulses. The single-layer consist of indium-tin oxide (ITO)/tris(8-hydroxy-quinoline)aluminum (Alq3)/magnesium (Mg):silver (Ag), whereas structure OLEDs are ITO/copper phthalocyanine (CuPc)/N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB)/Alq3/Mg:Ag. Apparent model-dependent values electron mobility (μe) in Alq3...

We present a statistical approach that combines comprehensive current-voltage data acquisition during the controlled manipulation of molecular junction with subsequent analysis. Thereby most probable transport characteristics can be determined. The excellent sensitivity this impartial to even subnanometer-long molecules is illustrated by benzene-1,4-dithiol and 4,4"-bis(acetylthiol)-2,2',5',2"-tetramethyl-[1,1';4',1"] terphenyl results.

A dielectric capping layer has been used to increase the light output and tune spectral characteristics of top-emitting, phosphorescent organic light-emitting devices (OLEDs). By controlling thickness deposited on top a thin metal cathode, transmittance electrode can be adjusted. Maximum is not achieved at highest cathode transmittance, indicating that interplay between different interference effects controlled by means capping-layer thickness. Furthermore, we demonstrate electrical device...

We demonstrate the implementation of tunneling field-effect transistors (TFETs) based on silicon nanowires (NWs) that were grown using vapor-liquid-solid growth method. The Si NWs contain p-i-n+ segments achieved by in situ doping phosphine and diborane as n- p-type dopant source, respectively. Electrical measurements TFETs show a band-to-band branch transfer characteristics. Furthermore, an increase on-state current decrease inverse subthreshold slope upon reducing gate oxide thickness are...

Charge transport through single diblock dipyrimidinyl diphenyl molecules consisting of a donor and acceptor moiety was measured in the low-bias regime as function bias at different temperatures using mechanically controllable break-junction technique. Conductance histograms acquired 10 mV reveal two distinct peaks, separated by factor 1.5, representing orientations molecule with respect to applied bias. The current–voltage characteristics exhibit temperature-independent rectification up...

We present heat-transport measurements conducted with a vacuum-operated scanning thermal microscope to study the conductance of monolayers nine different alkane thiols self-assembled on Au(111) surfaces as function their length (2 18 methylene units). The molecular is probed in confined area diameter below 10 nm contact between silicon tip and monolayer. This yields $\mathrm{p}{\mathrm{WK}}^{\ensuremath{-}1}$ sensitivity per molecule at temperature $200--300\text{...

We report complementary metal-oxide-semiconductor (CMOS)-compatible integration of compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively grown in vertical SiO2 nanotube templates fabricated substrates varying crystallographic orientations, including nanocrystalline Si. The investigated epitaxially grown, single-crystalline, free from threading dislocations, with an orientation dimension directly given by the shape template. exhibit stable photoluminescence at room...

Strain engineering has been used to increase the charge carrier mobility of complementary metal-oxide-semiconductor transistors as well boost and tune performance optoelectronic devices, enabling wavelength tuning, polarization selectivity suppression temperature drifts. Semiconducting nanowires benefit from enhanced mechanical properties, such increased yield strength, that turn out be beneficial amplify strain effects. Here we use photoluminescence (PL) study effect uniaxial stress on...

In this letter, we present vertical InAs-Si nanowire heterojunction tunnel FETs (TFETs). The devices consist of an InAs source on a Si channel and drain, with wraparound gate stack. Si-InAs combination allows achieving high <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> / xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ratios above 10 <sup...

A method is described to quantify thermal conductance and temperature distributions with nanoscale resolution using scanning microscopy. In the first step, resistance of tip-surface contact measured for each point a surface. second local determined from difference between heat flux sources switched on off. The demonstrated self-heating silicon nanowires. While homogeneous nanowire shows bell-shaped profile, diode exhibits hot spot centered near junction two doped segments.

Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency often bulky, lossy or require large source-drain gate currents operation, making them unsuitable many difficult to interface semiconducting devices. Here we present an electrically controlled superconducting switch based on a metallic nanowire. Transition from resistive state is...

The emission characteristics of top-emitting organic light-emitting devices (OLEDs) have been studied experimentally and theoretically to derive a quantitative understanding the effect dielectric capping layer. We demonstrated that angular intensity distribution spectral can be tuned light outcoupling enhanced simply by varying optical thickness layer deposited on top semitransparent metal electrode. With capping-layer concept, outcoupled in forward direction was increased factor 1.7,...

Abstract The formation of permanent or reversible metallic patterns on a substrate has applications in microfabrication and analytical techniques. Here, we investigate how to metallize an elastomeric stamp, either for processing mediated by the proximity between metal stamp active layer substrate, contact printing from substrate. stamps were made poly(dimethylsiloxane) (PDMS) modified before metallizing them with Au adding removing their bulk mobile silicone residues, oxidizing surface O 2...

A detailed investigation of the device operation a blue-emitting multilayer organic light-emitting (OLED) using an electronic model is presented. In particular, transient electroluminescence overshoot at turn-on found to originate from charge and recombination confinement effects internal interfaces. The location emission zone obtained its experimental determination exemplified by sensing layer method. Moreover, optimization intensity color discussed for red-emitting OLED. thin-film...