Alessia Di Vito

ORCID: 0000-0003-4774-3488
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About
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Research Areas
  • Perovskite Materials and Applications
  • GaN-based semiconductor devices and materials
  • MXene and MAX Phase Materials
  • 2D Materials and Applications
  • Radar Systems and Signal Processing
  • Semiconductor Quantum Structures and Devices
  • Advanced Photocatalysis Techniques
  • Theoretical and Computational Physics
  • Semiconductor materials and devices
  • Conducting polymers and applications
  • Magnetic properties of thin films
  • Advanced SAR Imaging Techniques
  • Distributed Sensor Networks and Detection Algorithms
  • Physics of Superconductivity and Magnetism
  • Quantum Dots Synthesis And Properties
  • Advanced Memory and Neural Computing
  • Target Tracking and Data Fusion in Sensor Networks
  • Advancements in Semiconductor Devices and Circuit Design
  • nanoparticles nucleation surface interactions
  • CCD and CMOS Imaging Sensors
  • X-ray Diffraction in Crystallography
  • Machine Learning in Materials Science
  • Wireless Signal Modulation Classification
  • Advanced battery technologies research
  • Precipitation Measurement and Analysis

University of Rome Tor Vergata
2010-2025

Engineering (Italy)
2024

Michigan Science Center
2023

Alenia Aermacchi
1994

University of Calabria
1985

Abstract MXenes are a recent family of 2D materials with very interesting electronic properties for device applications. One appealing feature is the wide range work functions shown by these materials, depending on their composition and surface terminations, that can be exploited to adjust band alignments between different material layers. In this work, based density functional theory calculations, how mixed terminations F, OH, and/or O affect function Ti 3 C 2 MXene analyzed in detail,...

10.1002/adfm.201909028 article EN Advanced Functional Materials 2020-02-13

2D transition metal carbides and nitrides (MXenes) open up novel opportunities in gas sensing with high sensitivity at room temperature. Herein, Mo2 CTx flakes aspect ratio are successfully synthesized. The chemiresistive effect a sub-µm MXene multilayer for different organic vapors humidity 101 -104 ppm dry air is studied. Reasonably, the low-noise resistance signal allows detection of H2 O down to 10 ppm. Moreover, suppresses response analytes due blocking adsorption active sites. By...

10.1002/adma.202104878 article EN cc-by-nc-nd Advanced Materials 2021-10-04

Abstract Interfaces pose significant challenges to the performance and stability of perovskite solar cells (PSCs), as defects weak interactions at these boundaries can lead energy losses degradation. To address issues, it is crucial functionalize hole transport materials (HTMs) effectively manage interfacial enhance charge transfer. This study introduces a carbazole‐based layer (TC‐ICA) that leverages halogen bonding (XB) for enhanced interface passivation with carboxylic group anchoring...

10.1002/smll.202502236 article EN Small 2025-03-19

Bilayer nickel oxide (NiOx)/[2-(3,6-dimethoxy-9H-carbazol-9yl) ethyl] phosphonic acid (MeO-2PACz) hole transport layers have become attractive for perovskite solar cells and tandem architectures. However, challenges such as the instability of NiOx ink, accumulation, trap-assisted non-radiative recombination at interface remain major drawbacks using NiOx/MeO-2PACz HTL bilayer. In this work, two synergic strategies are employed to address these issues doping ink with niobium (Nb)-based MXene)...

10.1002/smll.202411310 article EN Small 2025-04-03

Interface engineering is one of the promising strategies for long-term stabilization perovskite solar cells (PSCs), preventing chemical decomposition induced by external agents and promoting fast charge transfer. Recently, MXenes-2D structured transition metal carbides nitrides with various functionalization (O, -F, -OH) have demonstrated high potential mastering work function in halide absorbers significantly improved n-type collection cells. This demonstrates that MXenes allow efficient...

10.1002/smll.202201730 article EN Small 2022-08-11

Statistical fluctuations in the alloy composition on atomic scale can have important effects electronic and optical properties of bulk materials devices. In particular, carrier localization induced by disorder has been a much discussed topic during last decade with regard to III-nitride light emitting diodes (LEDs). Much experimental theoretical work dedicated study finally efficiency transport such Modeling approaches range from empirical analytical models down atomistic ab initio ones,...

10.1063/5.0005862 article EN Journal of Applied Physics 2020-07-24

An approximate and simple expression for the false alarm probability of a CA-CFAR device downstream from linearlaw detector is presented. The results obtained are in good agreement with those found using Monte Carlo simulation.

10.1049/el:19891131 article EN Electronics Letters 1989-12-07

Compositional variation in (In,Ga)N alloys is a controversial topic, still debated the literature for its influence on performance of light-emitting diodes. This study accounts presence nanometer-scale indium clustering an LED, and describes impact optical properties device. Clustering induces substantial redshift broadening emission spectrum; furthermore, temperature dependence radiative coefficient derived nonuniform structures good agreement with experiments that show trend opposite...

10.1103/physrevapplied.12.014055 article EN Physical Review Applied 2019-07-29

The design study of a micro illumination tool based on GaN microLED arrays is presented. high spatio-temporal resolution and the capability generating fully customized optical patterns that characterize proposed platform would enable manipulation biological systems, e.g., for optogenetics applications. Based ray tracing simulations, aspects mainly affect device performance have been identified, related structural parameters optimized to improve extraction efficiency spatial resulting light...

10.1364/ao.498432 article EN Applied Optics 2023-09-07

Abstract We analyze and present applications of a recently proposed empirical tight-binding scheme for investigating the effects alloy disorder on various electronic optical properties semiconductor alloys, such as band gap variation, localization charge carriers, transitions. The results typical antimony-containing III-V alloy, GaAsSb, show that new greatly improves accuracy in reproducing experimental gaps compared to other widely used schemes. atomistic nature approach paired with...

10.1088/1402-4896/ad4f65 article EN cc-by Physica Scripta 2024-05-22

The performance of the likelihood ratio detector (LRD) for moderately fluctuating targets (i.e. intermediate between Swerling II and I models) is evaluated case poor knowledge target characteristics. In particular, influence incorrect assumptions in design phase about signal-to-interference (SIR), correlation coefficient, shape autocorrelation function, mean Doppler frequency analysed by computing detectability loss due to mismatching hypothesis real It shown that LRD extremely robust an...

10.1049/ip-rsn:19990261 article EN IEE Proceedings - Radar Sonar and Navigation 1999-01-01

Constant false alarm rate (CFAR) processors based on order statistics (OS) are considered. The classical OSCFAR and its greatest-of (OSGO) version compared in the presence of a Weibull distributed (and Rayleigh as particular case) background, for design probability equal to 10-6. effects interfering targets background discontinuities evaluated by Monte Carlo importance sampling computer simulations. advantages OSGO processor these significant conditions shown.

10.1049/ip-rsn:19949886 article EN IEE Proceedings - Radar Sonar and Navigation 1994-01-01

Starting from a stochastic two-dimensional process we studied the transformation of points in disks and squares following protocol according to which at any step island size increases proportionally corresponding Voronoi tessera. Two interaction mechanisms among islands have been dealt with: coalescence impingement. We evolution density distribution functions, dependence on collision for both Poissonian correlated spatial distributions points. The functions found be invariant with fraction...

10.1103/physreve.82.061111 article EN Physical Review E 2010-12-07

Statistical indium fluctuations in InGaN alloys have been demonstrated to induce spatial localization of carriers. This phenomenon has a strong influence on the behavior based light emitting diodes and it is further exacerbated by presence compositional non-uniformities. In present work, we theoretically characterize non-uniform alloys, taking into account impact clustering electronic optical properties material. The assumption distribution within bulk structure results reduction band gap...

10.7567/1347-4065/ab06ba article EN cc-by Japanese Journal of Applied Physics 2019-04-16

We analyze and present applications of a recently proposed empirical tight-binding scheme for investigating the effects alloy disorder on various electronic optical properties semiconductor alloys, such as band gap variation, localization charge carriers, transitions. The results typical antimony-containing III-V alloy, GaAsSb, show that new greatly improves accuracy in reproducing experimental gaps compared to other widely used schemes. atomistic nature approach paired with reliable...

10.48550/arxiv.2401.16951 preprint EN arXiv (Cornell University) 2024-01-30

10.1109/nusod62083.2024.10723707 article EN 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) 2024-09-23

The tight binding (TB) approach represents a good trade-off between accuracy and computational burden. For this reason, it is widely used for device simulations. However, proper description of physical system by means TB requires an accurate parameterization the Hamiltonian matrix elements (HME), that usually done fitting over suitable properties can be measured or computed with first-principles approaches. We show particle swarm optimization algorithm powerful tool HME, using density...

10.1109/nusod49422.2020.9217665 article EN 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) 2020-09-01

The study of MAPbI3 phase transitions based on temperature-dependent optical spectroscopy has recently gained a huge attention. Photoluminescence (PL) investigations the tetragonal–orthorhombic transition suggest that tetragonal nanodomains are present below temperature and signatures associated with segregations observed. We have studied impact nanosegregation across orthorhombic–tetragonal system's properties employing tight binding (TB) approach. particle swarm optimization been used to...

10.1021/acs.jpclett.1c03378 article EN cc-by The Journal of Physical Chemistry Letters 2021-11-26

Simulation of electronic devices relies to large extent on semi-classical models, especially the drift-diffusion model. Where quantum effects or atomistic details are particularly important, more involved models used. Ideally, a combination different scales would allow simulation overall device structure. Here we present some approaches for combining continuum and with model optoelectronic devices.

10.1109/nmdc57951.2023.10343710 article EN 2023-10-22

Optical nanoscale metrological techniques like Raman spectroscopy produce large amounts of data, especially if employed as a default characterisation tool in industrial production lines. Proper management huge data is needed, order to allow for their further use analysis, automatization or machine learning applications. The definition metadata and the design database structure are paramount these contexts. This work presents prototype development such system, showcasing effective compliance...

10.1109/nusod59562.2023.10273558 article EN 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) 2023-09-18
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