Zhibo Wang

ORCID: 0000-0003-4776-2881
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Ferroelectric and Negative Capacitance Devices
  • Organic Electronics and Photovoltaics
  • Advanced Memory and Neural Computing
  • Conducting polymers and applications
  • Semiconductor materials and devices
  • Perovskite Materials and Applications
  • Laser and Thermal Forming Techniques
  • Power Quality and Harmonics
  • Advanced MEMS and NEMS Technologies
  • Particle Dynamics in Fluid Flows
  • Molecular Junctions and Nanostructures
  • Organic Light-Emitting Diodes Research
  • Adversarial Robustness in Machine Learning
  • Low-power high-performance VLSI design
  • Electronic and Structural Properties of Oxides
  • Radiation Effects in Electronics
  • MXene and MAX Phase Materials
  • Magnetic properties of thin films
  • Ultrasound and Cavitation Phenomena
  • Energy Harvesting in Wireless Networks
  • Combustion and Detonation Processes
  • Power Transformer Diagnostics and Insulation
  • Machine Learning and ELM
  • Advanced Sensor and Control Systems
  • Advanced Malware Detection Techniques

Donghua University
2022-2025

State Grid Corporation of China (China)
2024

China Academy of Space Technology
2023

Tsinghua University
2007-2021

Institute of Microelectronics
2021

National Tsing Hua University
2016

Abstract Tuning the properties of non‐fullerene acceptors (NFAs) through halogenation, including fluorination and chlorination, represents one most promising strategies to boost performance organic solar cells (OSCs). However, it remains unclear how F Cl choice influences molecular packing between small‐molecule polymeric acceptors. Here, a series with different amounts types halogenation is synthesized, effects chlorination are investigated. It found that chlorinated lead longer exciton...

10.1002/adfm.202300712 article EN Advanced Functional Materials 2023-02-23

An energy-efficient nonvolatile intelligent processor (NIP) is proposed for battery-less energy harvesting system. This NIP employs RRAM-based logics (NVL) with self-write-termination (SWT) scheme and low-power processing-in-memory (PIM) to achieve computing against frequent power-off situations. test chip was fabricated in 150nm CMOS process using HfO RRAM. achieves 462GOPs/J efficiency at 20MHz clock frequency, showing 13× performance improvement over state-of-the-arts. work presents the...

10.23919/vlsit.2017.7998149 article EN Symposium on VLSI Technology 2017-06-01

The emergence of Y-series non-fullerene acceptors (NFAs) has inspired the development various materials for high-performance organic solar cells (OSCs). In this work, a novel asymmetric NFA named Y6-1OBO bearing branched alkyl and alkoxy side chains was designed synthesized. When diiodomethane selected as solvent additive, Y6-1OBO-based devices achieved an efficiency 18.02% with open-circuit voltage 0.93 V fill factor 77.1%, which is much higher than that Y6-1O-based (16.81%). effects...

10.1021/acs.chemmater.2c02851 article EN Chemistry of Materials 2022-11-07

The incorporation of volatile solid additives has emerged as an effective strategy for enhancing the performance organic solar cells (OSCs). However, influence electronic structure these on morphological evolution remains insufficiently understood. Herein, 1,4‐Dibromobenzene (DBB) and 1,4‐Difluoro‐2,5‐dibromobenzene (DFBB) are introduced into OSCs. Theoretical calculations indicate that DFBB a higher electrostatic potential extremum stronger σ‐holes interaction compared to DBB, enabling more...

10.1002/anie.202500085 article EN Angewandte Chemie International Edition 2025-02-15

Nonvolatile flip-flops (nvFFs) enable frequent-off processors to achieve fast power-off and wake-up time while maintaining critical local computing states through parallel data movement between volatile FFs nonvolatile memory (NVM) devices. However, current nvFFs face challenges in large store energy ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{E}_{\mathrm {S}}$ </tex-math></inline-formula> )...

10.1109/jssc.2017.2700788 article EN IEEE Journal of Solid-State Circuits 2017-06-28

The active layer morphology and device performance of organic solar cells (OSCs) are highly dependent on the polymer aggregation behavior. However, controlling through molecular design to influence remains a challenging endeavor. In this work, we demonstrate straightforward yet effective approach modulate behavior typically used temperature-dependent PffBT4T(1,4) by regulating side chain arrangement. resulting polymer, PffBT4T(1,3), with regionally asymmetric alkyl arrangement, enables...

10.1021/acsapm.3c01831 article EN ACS Applied Polymer Materials 2023-10-27

In this letter, we demonstrate an integrated negative capacitance oxide thin-film transistor (NC-OTFT) based on ferroelectric Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HfZrO) film. The buried-gated TiN/HfZrO/Al xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> structure is developed with indium zinc as its channel. transfer characteristics are measured 1.2-V supply...

10.1109/led.2019.2907988 article EN IEEE Electron Device Letters 2019-03-28

Recent nonvolatile flip-flops (nvFFs) enable the parallel movement of data locally between (FFs) and memory (NVM) devices for faster system power off/on operations. The wide distribution long period in NVM-write times previous two-NVM-based nvFFs result excessive store energy (Es) over-write induced reliability degradation This work proposes an nvFF using a single NVM (1R) with self-write-termination (SWT), capable reducing E <inf xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/iedm.2016.7838430 article EN 2021 IEEE International Electron Devices Meeting (IEDM) 2016-12-01

Fluorination of polymer donors has demonstrated considerable potential for boosting the performance organic solar cells (OSCs). However, achieving optimal requires careful management fluorine levels, as excessive fluorination may adversely affect device efficiency. In this study, we introduce a controlled number atoms into alkyl side chains to optimize their temperature-dependent aggregation and intermolecular interactions. Four polymers (PTF0, PTF1, PTF2, PTF3) with reduced synthetic...

10.1021/acsapm.4c02542 article EN ACS Applied Polymer Materials 2024-11-07

With an ever-increasing demand for energy efficiency, processors with instant-on and zero leakage features are highly appreciated in harvesting as well "normally off" applications. Recently, zero-standby power fast switching nonvolatile (NVPs) have been proposed based on emerging memories (NVMs), such ferroelectric RAM or spin-transfer-torque magnetic RAM. However, previous NVPs store all data to NVM upon every interruption, resulting high-energy consumption degraded endurance. This paper...

10.1109/jssc.2017.2724024 article EN IEEE Journal of Solid-State Circuits 2017-08-07

ReRAM-based processing-in-memory (PIM) architecture is a promising solution for deep neural networks (NN), due to its high energy efficiency and small footprint. However, traditional PIM has use separate crossbar array store either positive or negative (P/N) weights, which limits both area efficiency. Even worse, imbalance running time of different layers idle ADCs/DACs even lower down the whole system This paper proposes AERIS, an <u>A</u>rea/<u>E</u>nergy-efficient 1T2R <u>R</u>eRAM based...

10.1145/3287624.3287635 article EN Proceedings of the 28th Asia and South Pacific Design Automation Conference 2019-01-18

Physical adversarial patches printed on clothing can easily allow individuals to evade person detectors. However, most existing patch generation methods prioritize attack effectiveness over stealthiness, resulting in that are aesthetically unpleasing. Although using generative networks or diffusion models produce more natural-looking patches, they often struggle balance stealthiness with and lack flexibility for user customization. To address these challenges, we propose a novel...

10.48550/arxiv.2412.01440 preprint EN arXiv (Cornell University) 2024-12-02

The discovery of ferroelectricity in hafnium zirconium oxide (HZO) thin films has attracted wide attention from academia to industry due the application ferroelectric non-volatile random access memories (FeRAM) with prominent performance scalability and CMOS process compatibility. Dielectric behavior HZO is a key factor affecting dynamic effect, piezoelectric electrostrictive effect. Interface between capping electrodes plays an important role regulating dielectric properties. In this paper,...

10.1109/jeds.2021.3126007 article EN cc-by IEEE Journal of the Electron Devices Society 2021-01-01

This paper presents a compare-and-select (CaS) error tolerant scheme for nonvolatile processors (NVPs). Nonvolatile flip-flops (NVFFs), used in NVPs suffer from the faults caused by devices. Conventional methods are designed centralized memory macros and inefficient distributed NVFFs. In our CaS scheme, we use read-write-read-compare strategy to get map of NVFFs find out NVFF bits with faults. Then fully functional selected store data discarded. The advantage method is that it provides more...

10.1145/2950067.2950092 article EN International Symposium on Nanoscale Architectures 2016-07-18

Aiming at the failure problem of silver plating layer waveguide falling off under action thermal stress during vacuum test spacecraft, and that amplitude consistency requirements radio frequency channel are not easy to achieve, temperature control device filled with composite phase change material is proposed test, counter-gravity direction paragravity this scheme other two schemes (fins aluminum blocks) simulated by Thermal Desktop software. According simulation results, advantages,...

10.1117/12.2681892 article EN 2023-06-16
Coming Soon ...