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S.Y. Lian

ORCID: 0000-0003-4842-039X
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Contact & Profiles
A5062211577
Research Areas
  • Ion-surface interactions and analysis
  • Integrated Circuits and Semiconductor Failure Analysis
  • Metal and Thin Film Mechanics
  • Electron and X-Ray Spectroscopy Techniques
  • Semiconductor materials and devices
  • Optical and Acousto-Optic Technologies
  • Silicon and Solar Cell Technologies
  • Chalcogenide Semiconductor Thin Films
  • Diamond and Carbon-based Materials Research
  • Geophysical Methods and Applications
  • Advanced Chemical Physics Studies
  • Nuclear Physics and Applications
  • Ultrasonics and Acoustic Wave Propagation
  • Oceanographic and Atmospheric Processes
  • Analytical chemistry methods development
  • Thin-Film Transistor Technologies
  • Magnetic properties of thin films
  • Catalytic Processes in Materials Science
  • Optical Coatings and Gratings

Shantou University
 2018-2023

 Preferential sputtering effects in depth profiling of multilayers with SIMS, XPS and AES
OPENALEX - Publications 
S. Hofmann Gang Zhou Janez Kovač Sandra Drev S.Y. Lian and 3 more Bangjiang Lin Y. Liu Jiangyong Wang

10.1016/j.apsusc.2019.03.211 article EN Applied Surface Science 2019-03-28
 Optimization of deconvoluted parameter for the quantification of high-resolution SIMS depth profiles
OPENALEX - Publications 
Taotao Li X.M. Zhuang H.M. Li Yingchao Xu Zhongneng Ma and 6 more Jiaqi Zheng Yiqun Geng C.L. Wang S.Y. Lian Jiangyong Wang Congkang Xu

10.1016/j.vacuum.2023.112342 article EN Vacuum 2023-06-19
 Depth resolution and preferential sputtering in depth profiling of delta layers
OPENALEX - Publications 
S. Hofmann S.Y. Lian Ya-Bo Han Y. Liu Jiangyong Wang

10.1016/j.apsusc.2018.06.022 article EN Applied Surface Science 2018-06-08
 Preferential sputtering and mass conservation in AES and SIMS depth profiling
OPENALEX - Publications 
S.Y. Lian Bing Lin Xin-Liang Yan Jiangyong Wang Congkang Xu

10.1016/j.vacuum.2018.11.020 article EN Vacuum 2018-11-13
 Deconvolution method for obtaining directly the original in-depth distribution of composition from measured sputter depth profile
OPENALEX - Publications 
S.Y. Lian Z.J. Wang C.L. Wang X. L. Yan Fan Lin and 2 more Jiangyong Wang Congkang Xu

10.1016/j.vacuum.2019.05.008 article EN Vacuum 2019-05-07
 Correlation of depth resolution and preferential sputtering in depth profiles of thin layers by Secondary Ion Mass Spectrometry (SIMS)
OPENALEX - Publications 
S. Hofmann S.Y. Lian Yi Han Qiufang Deng Jiangyong Wang

10.1016/j.tsf.2018.07.045 article EN Thin Solid Films 2018-08-02
 Prediction and experimental determination of the layer thickness in SIMS depth profiling of Ge/Si multilayers: Effect of preferential sputtering and atomic mixing
OPENALEX - Publications 
S.Y. Lian K.J. Kim Tae Gun Kim S. Hofmann Jiangyong Wang

10.1016/j.apsusc.2019.03.223 article EN Applied Surface Science 2019-03-21
 Optimization of the two parameters in the deconvolution procedure for obtaining the original in-depth distribution of composition from measured sputter depth profile by genetic algorithm
OPENALEX - Publications 
C.L. Wang J. Li Xiaoxi Liu Y.L. Chen Zhijia Tan and 5 more Huining Li Hao Yang S.Y. Lian Jiangyong Wang Congkang Xu

10.1016/j.vacuum.2020.109866 article EN Vacuum 2020-10-24
 Fe equilibrium and kinetic segregations of surface/subsurface layers upon annealing Fe on Pt(111) in vacuum/oxygen/hydrogen environment
OPENALEX - Publications 
Fengmin Zhong Yi Yan S.Y. Lian Jiangyong Wang Congkang Xu

10.1016/j.susc.2023.122263 article EN Surface Science 2023-01-31
 Effects of Stress and Roughness on the Reflectivity of Blue Light in ZnS/MgF2 Multilayers
OPENALEX - Publications 
S.Y. Lian Shilin Xiao Y. P. Yu Shun Hui Lin H. Y. Zhang and 3 more Guozhi Lin Chen Xu Jiangyong Wang

10.5220/0007440404780485 article EN cc-by-nc-nd 2018-01-01
 Explanation of the apparent depth resolution improvement by SIMS using cluster ion detection
OPENALEX - Publications 
S. Hofmann Pavel Lejček Gang Zhou Hao Yang S.Y. Lian and 2 more Janez Kovač Jiangyong Wang

The apparent improvement of the depth resolution in secondary ion mass spectrometry profiles using cluster ions (Me2+, Me3+) as compared to single (Me+) is explained be an artifact caused by attractive interaction enhancing formation. Successful application mixing-roughness-information model shows how different are interconnected and discloses that resolutions fact identical.

10.1116/6.0000108 article EN Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 2020-04-22
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