A5011150342- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Advanced Research in Systems and Signal Processing
- Semiconductor Lasers and Optical Devices
- Material Properties and Applications
- Nuclear physics research studies
- Advanced Materials and Semiconductor Technologies
- Semiconductor materials and interfaces
- Laser Design and Applications
- Sensor Technology and Measurement Systems
- Nuclear Physics and Applications
- Silicon Carbide Semiconductor Technologies
- Induction Heating and Inverter Technology
- Advancements in Semiconductor Devices and Circuit Design
- Quantum, superfluid, helium dynamics
- Carbon Nanotubes in Composites
- Gas Sensing Nanomaterials and Sensors
- Thermography and Photoacoustic Techniques
- Particle physics theoretical and experimental studies
- Engineering Technology and Methodologies
- Agriculture and Biological Studies
- Atomic and Molecular Physics
- Radio Frequency Integrated Circuit Design
- Aerospace, Electronics, Mathematical Modeling
- Advanced Chemical Physics Studies
Institute of Radio-Engineering and Electronics
2015-2024
Ulyanovsk State Technical University
2001-2022
Russian Academy of Sciences
2007-2022
Omsk State Technical University
2012-2020
Ulyanovsk State University
2017-2020
Lomonosov Moscow State University
1978-2020
Gorky Institute of World Literature
2020
Research Institute of Technology (Russia)
2020
Moscow State University
2020
Institute for Nuclear Research
1986-2016
Modulation method and the device for thermal impedance measuring of power mosfets IGBT transistors, measurement results are described. The measurements were performed by generic modulation that implies heating a under test varying harmonically. A pulse sequence current, with length harmonically, is passed through test. p-n junction temperature determined temperature-sensitive parameter, which forward voltage drop on between pulses at low current. Analysis dependence frequency allows us to...
Measurement results of thermal impedance powerful light-emitting diode assemblies are described. The measurements were performed with the help a frequency method that involves heating object under test by varying power harmonically. A pulse sequence current, length harmonically, is passed through device test. p-n junction temperature determined measuring temperature-sensitive parameter, which forward voltage drop on between pulses at low current. first harmonic discrete Fourier transform,...
This article describes the thermal resistance "junction-to-case" measurement results for GaN high-electron mobility transistors (HEMTs). The measurements were taken by using apparatus which includes two methods of measurements. For first one that uses standard MIL-STD-750-3, a sequence heating current pulses passes through transistor channel and then junction temperature is measured. second method modulated power measures response variable component temperature. To exclude influence...
This paper describes a modulation method of measuring the thermal impedance solar modules. The measurements are taken by varying heating power harmonically and variable component junction temperature, which changes in response to it. Analyzing dependence on frequency allows determination components corresponding structural elements module. It is experimentally shown that amplitude temperature mostly independent value power. explained current crowding, nonuniform distribution through...
Current spreading in a high-power flip-chip light-emitting diode (LED) and its effect on the chip thermal resistance has been studied both theoretically experimentally. Thermal resistances of various LED units have determined by measuring forward voltage relaxation under pulsed current excitation at varied duty cycle. The total is found to rise ~20% while operating increasing from zero 1 A. density distribution active region predicted coupled simulations heat transfer agrees well with...
A high-concentration (400X-1100X) CPV module is investigated in view of developing a planar concentrator PV panel with the form factor approaching that flat-plate solar panels. The employs Ring-Array Concentrator (RAC), novel point-focus optical design based on concept Reflective Lens <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">™</sup> (RL). RLs, which can also be referenced to as refractionless lenses, combine high collecting power mirrors...
A mathematical thermomechanical model of a multi-chip electronic module (MEM) containing three silicon dies high-power transistors fixed with conductive adhesive on copper plate placed radiator is considered in the form system equations thermal conductivity and thermoelasticity specified boundary conditions. As result computational studies COMSOL Multiphysics software environment, distributions temperature stresses MEM structural elements were obtained depending heating power, thickness size...
A brief analysis of the causes inhomogeneous and unstable current distribution between elementary transistors in comb structures (CS) bipolar (BT) heterobipolar (HBT) microwave is presented. An expression for flowing into a CS transistor, taking account emitter track metallization resistance, derived. estimation influence technological variation resistances on non-uniformity transistor total given. It shown that resistance tracks plays stabilizing role leads to increase thermal stability CS,...
The results of measurements the transient thermal characteristics (TTC) CMOS digital integrated circuits (DIC) for using voltage out low and high as temperature-sensitive parameters (TSP) are presented. Options improving accuracy measuring TTC DIC at a supply considered.
The structural scheme is presented and the principle of operation temperature sensor using resonant magnetically coupled circuits described, through which electrical energy for supplying measurement information transmitted. sensing element implemented on basis digital integrated circuit NST1001, output signal a sequence pulses, number proportional to value measured temperature.