A5057346016- Chalcogenide Semiconductor Thin Films
- solar cell performance optimization
- Semiconductor Quantum Structures and Devices
- Quantum Dots Synthesis And Properties
- Nanowire Synthesis and Applications
- Copper-based nanomaterials and applications
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Perovskite Materials and Applications
- GaN-based semiconductor devices and materials
- Photonic and Optical Devices
- Laser Material Processing Techniques
- Photodynamic Therapy Research Studies
- Advanced Surface Polishing Techniques
- Nanoplatforms for cancer theranostics
- Advanced Fiber Optic Sensors
- Photoacoustic and Ultrasonic Imaging
- Photovoltaic System Optimization Techniques
- Urinary Bladder and Prostate Research
- Prostate Cancer Diagnosis and Treatment
- Advanced Fiber Laser Technologies
- Analytical Chemistry and Sensors
- Advanced Fluorescence Microscopy Techniques
- Fungal and yeast genetics research
- Radiation Effects in Electronics
Istituti di Ricovero e Cura a Carattere Scientifico
2023-2024
Universidad de Cantabria
2021-2023
Instituto de Investigación Marqués de Valdecilla
2021-2023
Instituto de Salud Carlos III
2021-2023
Swiss Federal Laboratories for Materials Science and Technology
2018-2021
Centro de Investigación Biomédica en Red
2021
Universidad Politécnica de Madrid
1995-2020
European Telecommunications Standards Institute
2020
IMDEA Energy Institute
2017-2018
Purdue University West Lafayette
2016
Passivation and interlayer engineering are important approaches to increase the efficiency stability of perovskite solar cells. Thin insulating dielectric films at interface between charge carrier transport layers have been suggested passivate surface defects. Here, we analyze effect depositing poly(methyl methacrylate) (PMMA) from a very low-concentration solution. Spatial- time-resolved photoluminescence atomic force microscopy analyses samples with diverse morphologies demonstrate...
Four-terminal (4-T) tandem solar cells (e.g., perovskite/CuInSe2 (CIS)) rely on three transparent conductive oxide electrodes with high mobility and low free carrier absorption in the near-infrared (NIR) region. In this work, a reproducible In2O3:H (IO:H) film deposition process is developed by independently controlling H2 O2 gas flows during magnetron sputtering, yielding value up to 129 cm2 V-1 s-1 highly crystallized IO:H films annealed at 230 °C. Optimization of partial pressures further...
Abstract This paper studies the recombination at perimeter in subcells that constitute a GaInP/GaAs/Ge lattice‐matched triple‐junction solar cell. For that, diodes of different sizes and consequently perimeter/area ratios have been manufactured single‐junction cells resembling It has found neither GaInP nor Ge is significant devices as small 500 μ m × m(2.5 ⋅ 10 − 3 cm 2 ) 250 (6.25 4 Ge. However, GaAs, not negligible low voltages even large 1cm , it main limiting factor open circuit voltage...
A perspective on some strategies to trigger new developments for the next generation of Cu(In,Ga)Se<sub>2</sub> solar cells is presented.
Achieving high power conversion efficiencies with Cu(In,Ga)Se 2 (CIGS) solar cells grown at low temperature is challenging because of insufficient thermal energy for grain growth and defect annihilation, resulting in poor crystallinity, higher concentration, degraded device performance. Herein, the possibilities high‐performing devices produced very temperatures (≤450 °C) are explored. By alloying CIGS Ag by precursor layer method, (Ag,Cu)(In,Ga)Se (ACIGS) about 450 °C reach an efficiency...
The main limiting factors of multijunction solar cells operating under ultra-high concentration (>1000 suns) are examined by means 2D physically based numerical modelling. validation the model is carried out fitting calibrated light measurements. Because series resistance most important constraint in electrical performance cell irradiance, it analysed and quantified detailing different contributions such as: (i) properties emitter; (ii) window layer top cell; (iii) band discontinuities...
Understanding and controlling the crystallization of organic–inorganic perovskite materials is important for their function in optoelectronic applications. This control particularly delicate scalable single-step thermal annealing methods. In this work, mechanisms flash infrared-annealed films, grown on substrates with lithographically patterned Au nucleation seeds, are investigated. The patterning enables situ observation to study kinetics precise domain growth, while retaining...
In fused silica, ultrafast laser assisted etching enables high chemical rates (>300 μm h-1) by setting a light polarisation linear and perpendicular to the beam writing direction. However, for many non-planar surfaces 3D structures, dynamic control is difficult or not yet possible implement. this contribution, we identify inscription regime in which are accomplished independently of polarisation. (<15 pulses per μm), measure ∼300 h-1 (4 hours NaOH) including femtosecond-pulse energies...
Abstract The performance of Cu(In,Ga)Se 2 (CIGS) solar cells is limited by the presence highly recombinative CIGS/Mo interface. recombination at interface influential for open circuit voltage ( V OC ) in high quality CIGS absorbers with increased charge carriers diffusion length. A quantitative understanding role Ga back grading height Δ GGI) suppressing needed. In this work, we take advantage a low temperature process to modify GGI while keeping composition notch and front regions almost...
Abstract A GaInP/Ga(In)As/GaNAsSb/Ge 4J solar cell grown using the combined MOVPE + MBE method is presented. This structure used as a test bench to assess effects caused by integration of subcells and tunnel junctions into full structure. significant degradation Ge bottom subcell emitter observed during growth GaNAsSb subcell, with drop in carrier collection efficiency at high energy photon range that causes ~15% lower J sc V oc ~50 mV 1‐sun. The shown much ~140 No performance junctions, no...
This paper summarizes the state-of-the-art of lattice matched GaInP/Ga(In)As/Ge triple-junction solar cell developed at Solar Energy Institute UPM (IES-UPM). Different research topics tackled over last years about this structure are described. As result work, an efficiency ~ 40% <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 415\times$</tex> is presented.
Lattice-matched and pseudomorphic tunnel junctions have been developed in the past for application a variety of semiconductor devices, including heterojunction bipolar transistors, vertical cavity surface-emitting lasers, multijunction solar cells. However, metamorphic received little attention. In 4-junction Ga0.51In0.49P/GaAs/Ga0.76In0.24As/Ga0.47In0.53As inverted-metamorphic cells (4J-IMM), junction is required to series connect 3rd 4th junctions. We present based on...
Abstract The open‐circuit voltage ( V OC ) is the main limitation to higher efficiencies of Cu(In,Ga)Se 2 solar cells. One most critical parameters directly affecting charge carrier lifetime. Therefore, it essential evaluate extent which inhomogeneities in material properties limit lifetime and how postdeposition treatments (PDTs) growth conditions affect properties. Time‐resolved photoluminescence (TRPL) microscopy employed at similar one sun study fluctuations with light (Na) heavy (Rb)...
Abstract Germanium solar cells are used as bottom subcells in many multijunction cell designs. The question remains whether the thermal load originated by growth of upper layers structure affects Ge subcell performance. Here, we report and analyze performance degradation due to such lattice‐matched GaInP/Ga(In)As/Ge triple‐junction cells. Specifically, have detected a quantum efficiency loss wavelength region corresponding emitter layer (which accounts for up 20% equivalent J SC ) 55 mV V OC...
Abstract Cu(In,Ga)Se 2 solar cells have markedly increased their efficiency over the last decades currently reaching a record power conversion of 23.3%. Key aspects to this progress are engineered bandgap gradient profile across absorber depth, along with controlled incorporation alkali atoms via post‐deposition treatments. Whereas impact these treatments on carrier lifetime has been extensively studied in ungraded films, role Ga‐gradient mobility less explored. Here, transient absorption...
Objectives: The role of surgical metastasectomy (MST) in solitary or oligometastasis from renal cell carcinoma (RCC) and its impact on survival outcomes remains poorly addressed. We evaluated the MST overall (OS) patients with oligometastatic (m)RCC. Materials methods: institutional cancer prospective database was examined for cases treated partial radical nephrectomy who developed metastatic disease during follow-up. Patients evidence clinical metastasis at first diagnosis were excluded....
Abstract Two key strategies for enhancing the efficiency of Cu(In,Ga)Se 2 solar cells are bandgap gradient across absorber and incorporation alkali atoms. The combined Na Rb into has brought large gains compared to Na‐containing or alkali‐free layers. Here, transient absorption spectroscopy is employed study effect NaF NaF+RbF postdeposition treatments (PDT) on minority carrier dynamics in different excitation volumes typical composition‐graded cells. Electron lifetimes found be highly...
The aim of this study was to compare peri-operative and mid-term outcomes patients who underwent robot-assisted simple prostatectomy (RASP) vs holmium laser enucleation the prostate (HOLEP). RASP HOLEP are treatments choice for men with symptomatic benign prostatic obstruction (BPO) a ≥80 g, achieving comparable short efficacy. No randomized controlled studies have proved superiority one technique over other.The prospectively maintained databases participating institutions were queried...