A5058201123- solar cell performance optimization
- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Chalcogenide Semiconductor Thin Films
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Quantum Dots Synthesis And Properties
- Electron and X-Ray Spectroscopy Techniques
- Photonic and Optical Devices
- Mechanical and Optical Resonators
- Photovoltaic System Optimization Techniques
- Advanced MEMS and NEMS Technologies
- Radiation Effects in Electronics
- Geophysics and Sensor Technology
- Ga2O3 and related materials
- Surface and Thin Film Phenomena
- ZnO doping and properties
- Ion-surface interactions and analysis
- Laser-induced spectroscopy and plasma
- Advanced Sensor and Energy Harvesting Materials
- Optical Coatings and Gratings
- Advanced Thermoelectric Materials and Devices
Universidad de Málaga
2022-2024
Universidad Politécnica de Madrid
2011-2022
Lund University
2017-2022
Centre Hospitalier de Lens
2017
Universitat de Barcelona
2017
Institut de Nanociència i Nanotecnologia de la Universitat de Barcelona
2017
Helmholtz-Zentrum Berlin für Materialien und Energie
2011
III–V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films have shown impressive performance improvements recent years. To continue this development there is a need for characterization techniques giving quick reliable feedback growth development. Further, which can improve understanding of link between conditions, subsequent processing, cell are desired. Here, we present use nanoprobe system inside scanning...
Abstract This paper studies the recombination at perimeter in subcells that constitute a GaInP/GaAs/Ge lattice‐matched triple‐junction solar cell. For that, diodes of different sizes and consequently perimeter/area ratios have been manufactured single‐junction cells resembling It has found neither GaInP nor Ge is significant devices as small 500 μ m × m(2.5 ⋅ 10 − 3 cm 2 ) 250 (6.25 4 Ge. However, GaAs, not negligible low voltages even large 1cm , it main limiting factor open circuit voltage...
Semiconductor nanowires could significantly boost the functionality and performance of future electronics, light-emitting diodes, solar cells. However, realizing this potential requires growth methods that enable high-throughput low-cost production with controlled doping. Aerotaxy is an aerosol-based method extremely high rate does not require a substrate, allowing mass-production high-quality at low cost. So far, pn-junctions, crucial element cells have been realized by growth. Here we...
Abstract The electrical and optical coupling between subcells in a multijunction solar cell affects its external quantum efficiency (EQE) measurement. In this study, we show how low breakdown voltage of component subcell impacts the EQE determination demands use finely adjusted bias. optimum bias for measurement Ge two different GaInP/GaInAs/Ge triple‐junction cells is determined both by sweeping tracing I–V curve under same light conditions applied during It shown that gives rapid valuable...
The main limiting factors of multijunction solar cells operating under ultra-high concentration (>1000 suns) are examined by means 2D physically based numerical modelling. validation the model is carried out fitting calibrated light measurements. Because series resistance most important constraint in electrical performance cell irradiance, it analysed and quantified detailing different contributions such as: (i) properties emitter; (ii) window layer top cell; (iii) band discontinuities...
III-V semiconductor-based planar multi-junction solar cells synthesized to match the spectrum, increase absorption, and reduce thermalization loss are today's world-record efficiency cells. Realizing similarly performing nanowire (NW) would require significantly less material is more sustainable at lower cost than The NW geometry allows expanding range of compatible combinations along axis far beyond current enables promising applications in, for example, space power technology smart...
Abstract Tunnel junctions are key for developing multijunction solar cells (MJSC) ultra‐high concentration applications. We have developed a highly conductive, high bandgap p + ‐AlGaAs/n ‐GaInP tunnel junction with peak tunneling current density as‐grown and thermal annealed devices of 996 A/cm 2 235 , respectively. The J – V characteristics the after annealing, together its behavior at MJSCs typical operation temperatures, indicate that this is suitable candidate concentrator MJSC designs....
Space power systems require photovoltaics that are lightweight, efficient, reliable, and capable of operating for years or decades in space environment. Current solar panels use planar multijunction, III–V based cells with very high efficiency, but their specific (power to weight ratio) is limited by the added mass radiation shielding (e.g., coverglass) required protect from high-energy particle occurs space. Here, we demonstrate nanowire-array have dramatically superior performance relative...
This paper summarizes the state-of-the-art of lattice matched GaInP/Ga(In)As/Ge triple-junction solar cell developed at Solar Energy Institute UPM (IES-UPM). Different research topics tackled over last years about this structure are described. As result work, an efficiency ~ 40% <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 415\times$</tex> is presented.
Abstract Germanium solar cells are used as bottom subcells in many multijunction cell designs. The question remains whether the thermal load originated by growth of upper layers structure affects Ge subcell performance. Here, we report and analyze performance degradation due to such lattice‐matched GaInP/Ga(In)As/Ge triple‐junction cells. Specifically, have detected a quantum efficiency loss wavelength region corresponding emitter layer (which accounts for up 20% equivalent J SC ) 55 mV V OC...
Radiation hard thin-film solar cell technologies are necessary in order to achieve a step forward the specific power of arrays for space applications. In this article, we analyze degradation nanowire (NW) cells under high energy particles. GaAs NW have been irradiated with protons 100 and 350 keV at different fluences. The radiation hardness all cases is remarkable comparison planar prior literature. Design guidelines optimize applications by jointly increasing their efficiency presented.
Nanowire based solar cells hold promise for terrestrial and space photovoltaic applications. However, to speed-up further continue with nanowire cell development, quick reliable characterization tools capable of evaluating single performance nanowires still standing on the substrate are necessary. Here, we present use a light emitting diode (LED) setup, which combined nanoprobe system inside scanning electron microscope, enables on-wafer, single, optoelectronic characterization. In...
In this paper, the benefits of ultra high concentration (¿ 1000 suns) are shown in terms cost reduction and efficiency increase. Accordingly, strategy followed at IES-UPM for more than 15 years is development III-V solar cells suitable operation suns or more. Recently, we have developed manufactured a GaInP/GaAs dual-junction cell which results an (measured Calibration Laboratory, CalLab, Fraunhofer Institute Freiburg) 32.6% range going from 499 to 1026 suns. This world record cell. Besides,...
An extended 3D distributed model based on circuit units for the simulation of triple‐junction solar cells under realistic conditions light distribution has been developed. A special emphasis put in capability to accurately account current mismatch and chromatic aberration effects. This validated, as shown by good agreement between experimental results, different spot characteristics including spectral irradiance non‐uniformities. is then used prediction performance a cell corresponding real...
Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared conventional photodetectors. A detector design where the multiplication region is implemented a large bandgap material desired avoid detrimental Zener tunneling leakage currents, concern otherwise smaller materials required for absorption at 1.3/1.55 um. Self-assembled III-V semiconductor nanowires offer advantages such enhanced...
The measurement of the external quantum efficiency (EQE) low bandgap subcells in a multijunction solar cell can be sometimes problematic. In particular, this paper describes set cases where EQE Ge subcell conventional GaInP/GaInAs/Ge triple-junction cannot fully measured. We describe way to identify each case by tracing I-V curve under same light-bias conditions applied for measurement, together with strategies that could implemented attain best possible subcell.
We investigated the preparation of single domain Ge(100):As surfaces in a metal-organic vapor phase epitaxy reactor. In situ reflection anisotropy spectra (RAS) vicinal substrates change when arsenic is supplied either by tertiarybutylarsine or background As4 during annealing. Low energy electron diffraction shows mutually perpendicular orientations dimers, scanning tunneling microscopy reveals distinct differences step structure, and x-ray photoelectron spectroscopy confirms As coverage...
The separation of hot carriers in semiconductors is interest for applications such as thermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowires offer several potential advantages effective hot-carrier as: a high degree control flexibility heterostructure-based band engineering, increased temperatures compared to bulk, geometry well suited local light absorption. Indeed, InAs with short InP energy barrier have been observed produce electric power under global...