We experimentally verify hitherto untested theoretical predictions about the thermoelectric properties of Kondo correlated quantum dots (QDs). The specific conditions required for this study are obtained by using QDs epitaxially grown in nanowires, combined with a recently developed method controlling and measuring temperature differences at nanoscale. This makes it possible to obtain data very high quality both below above temperature, allows quantitative comparison predictions....

Scanning gate microscopy (SGM) is used to image scar structures in an open quantum dot, which created InAs well by electron-beam lithography and wet etching. The scanned images demonstrate periodicities magnetic field that correlate those found the conductance fluctuations. Simulations have shown these transform bear a strong resemblance actual scars dot replicate through modes direct agreement with Darwinism.

Quantum dots provide a natural system in which to study both quantum and classical features of transport. As closed testbed, they with very rich set eigenstates. When coupled the environment through pair point contacts, each passes several modes, original evolves into decoherent coherent states, classically would compose mixed phase space. The manner this breakup is governed strongly by Zurek's decoherence theory, remaining states possess all properties his pointer states. These are...

Studies of thermally induced transport in nanostructures provide access to an exciting regime where fluctuations are relevant, enabling the investigation fundamental thermodynamic concepts and realization thermal energy harvesters. We study a serial double quantum dot formed InAs/InP nanowire coupled two electron reservoirs. By means specially designed local metallic joule-heater, temperature phonon bath vicinity can be enhanced. This results phonon-assisted transport, conversion heat into...

Abstract Nanochains made up of a one-dimensional arrangement magnetic nanoparticles exhibit anisotropic properties with potential for various applications. Herein, using novel self-assembly method we directly integrate single nanochains onto desired substrates including devices. We present nanoscopic analysis magnetization reversal in 1D linear nanoparticle arrays by combining X-ray microscopy, magnetoresistance, and micromagnetic simulations. Imaging the local along individual scanning...

Magneto-responsive soft films constitute a fascinating class of smart materials and devices capable performing various tasks, such as micromanipulation or transport, noninvasive surgery, sensing. These components are fabricated by incorporating magnetic into flexible substrates. In this context, arranging particles elongated chains exhibiting shape anisotropy has shown great potential. Here, we introduce novel technique for fabricating magnetically responsive using continuous single-step...

We use scanning gate microscopy to probe the ballistic motion of electrons within an open GaAs/AlGaAs quantum dot. Conductance maps are recorded by a biased tip over dot while magnetic field is applied. show that, for specific fields, measured conductance images resemble classical transmitted and backscattered trajectories their mechanical analogue. In addition, we prove experimentally, with this direct measurement technique, existence pointer states. The demonstrated imaging technique...

The photothermoelectric (PTE) effect uses nonuniform absorption of light to produce a voltage via the Seebeck and is interest for optical sensing solar-to-electric energy conversion. However, utility PTE devices reported date has been limited by need use tightly focused laser spot achieve required, illumination their dependence upon coefficients constituent materials, which exhibit tunability and, generally, low values. Here, we InAs/InP heterostructure nanowires overcome these limitations:...

In the past decade, there has been significant interest in potentially advantageous thermoelectric properties of one-dimensional (1D) nanowires, but it challenging to find high power factors based on 1D effects practice. Here we point out that is an upper limit factor nonballistic as a consequence recently established quantum bound output. We experimentally test this quasiballistic InAs nanowires by extracting maximum first subband through I-V characterization, finding measured conform...

Nanowires bring new possibilities to the field of hot-carrier photovoltaics by providing flexibility in combining materials for band engineering and using nanophotonic effects control light absorption. Previously, an open-circuit voltage beyond Shockley–Queisser limit was demonstrated devices based on InAs–InP–InAs nanowire heterostructures. However, these first experiments, location absorption, therefore precise mechanism extraction, uncontrolled. In this Letter, we combine plasmonic...

Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons particularly problematic, leading unpredictable changes the behavior of such quantum dots each time they cooled for use. We show that dot can be highly sensitive probe disorder potential and that, by removing populating electrostatically, its properties become reproducible high fidelity after thermal cycling room temperature. Our work demonstrates...

A key task in the emerging field of bioelectronics is transduction between ionic/protonic and electronic signals at high fidelity. This a considerable challenge since two carrier types exhibit intrinsically different physics are best supported by very materials -- inorganic semiconductors organic or bio-organic polymers, gels electrolytes. Here we demonstrate new class organic-inorganic transducing interface featuring semiconducting nanowires electrostatically gated using solid...

We present resistively detected NMR measurements in induced and modulation-doped electron quantum point contacts, as well hole contacts. While the magnitude of resistance change associated peaks n-type devices is line with other recent using this technique, effect p-type too small to measure. This suggests that hyperfine coupling between holes nuclei type device much smaller than coupling, which could have implications information processing.

We report an electron-beam based method for the nanoscale patterning of poly(ethylene oxide)/LiClO4 polymer electrolyte. use patterned electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects enables multiple, independently controllable gates. The method's simplicity broadens scope using gating...

We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step two independent wrap-gates requires major change in fabrication methodology, key advantage this new approach, and orientation more generally, is that achieving than segments then no extra steps. This contrast vertical orientation, where significant subset of steps needs be repeated each additional gate. show cross-talk between adjacent...

Quantum point contacts (QPCs) have shown promise as nanoscale spin-selective components for spintronic applications and are of fundamental interest in the study electron many-body effects such 0.7 x 2e^2/h anomaly. We report on dependence 1D Lande g-factor g* anomaly density confinement QPCs with two different top-gate architectures. obtain values up to 2.8 lowest subband, significantly exceeding previous in-plane AlGaAs/GaAs QPCs, approaching that InGaAs/InP QPCs. show is highly sensitive...

We use the strongly temperature-dependent ionic mobility in polymer electrolytes to 'freeze in' specific charge environments around a nanowire using local wrap-gate geometry. This enables us set both threshold voltage for conventional doped substrate gate and disorder potential at temperatures below 200 Kelvin, which we characterize detail by combining conductance thermovoltage measurements with modeling. Our results demonstrate that electrolyte gates are compatible thermoelectrics, where...

Open quantum dots provide a natural system in which to study both classical and features of transport. From the point view these possess mixed phase space yields families closed, regular orbits as well an expansive sea chaos. An important question concerns manner states evolve into set that populate dot limit. In reverse direction, world is governed strongly by Zurek's decoherence theory. This was discussed from perspective earlier review (Ferry et al 2011 Semicond. Sci. Technol. 26 043001)....

Abstract magnified image We compare the electronic characteristics of nanowire field‐effect transistors made using single pure wurtzite and zincblende InAs nanowires grown from identical catalyst particles. transfer mobility versus temperature for these devices to better understand how differences in phase govern properties transistors. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

The separation of hot carriers in semiconductors is interest for applications such as thermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowires offer several potential advantages effective hot-carrier as: a high degree control flexibility heterostructure-based band engineering, increased temperatures compared to bulk, geometry well suited local light absorption. Indeed, InAs with short InP energy barrier have been observed produce electric power under global...

Using the excess energy of charge carriers excited above band edge (hot carriers) could pave way for optoelectronic devices, such as photovoltaics exceeding Shockley-Queisser limit or ultrafast photodetectors. Semiconducting nanowires show promise a platform hot-carrier extraction. Proof principle photovoltaic devices have already been realized based on InAs nanowires, using epitaxially defined InP segments filters that selectively transmit hot electrons. However, it is not yet fully...

Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated 'hot carriers' before they cool lattice temperature. Hot have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not low-bandgap materials, where potential gain is highest. Recently, a high open-circuit voltage was an illuminated wurtzite InAs nanowire with low bandgap...

We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using resist-trench alignment technique. Top then defined the form structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control previous horizontal wrap-gated transistors that arise because is by wet-etching. In presented here limited resolution of electron-beam-lithography...