Steven Limpert

ORCID: 0000-0001-5694-9782
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About
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Research Areas
  • Nanowire Synthesis and Applications
  • Semiconductor Quantum Structures and Devices
  • solar cell performance optimization
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and interfaces
  • Photonic and Optical Devices
  • Advanced Thermoelectric Materials and Devices
  • Semiconductor materials and devices
  • Chalcogenide Semiconductor Thin Films
  • Silicon and Solar Cell Technologies
  • Advanced Memory and Neural Computing
  • Thin-Film Transistor Technologies
  • Neural Networks and Reservoir Computing
  • Plasmonic and Surface Plasmon Research
  • Hybrid Renewable Energy Systems
  • Advanced Semiconductor Detectors and Materials
  • GaN-based semiconductor devices and materials
  • Thermal Radiation and Cooling Technologies
  • Energy and Environment Impacts
  • 2D Materials and Applications
  • Energy Harvesting in Wireless Networks
  • Ga2O3 and related materials

Lund University
2017-2020

UNSW Sydney
2013-2017

Arizona State University
2012

The photothermoelectric (PTE) effect uses nonuniform absorption of light to produce a voltage via the Seebeck and is interest for optical sensing solar-to-electric energy conversion. However, utility PTE devices reported date has been limited by need use tightly focused laser spot achieve required, illumination their dependence upon coefficients constituent materials, which exhibit tunability and, generally, low values. Here, we InAs/InP heterostructure nanowires overcome these limitations:...

10.1021/acs.nanolett.7b00536 article EN Nano Letters 2017-06-10

Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in ultraviolet, visible and near infrared. Here, we report on nanowire heterostructure array exhibiting a photoresponse from long-wavelength In particular, infrared response 3-20 um is enabled by normal incidence excitation intersubband transitions low-bandgap InAsP quantum...

10.1021/acs.nanolett.7b04217 article EN Nano Letters 2017-12-19

Nanowires bring new possibilities to the field of hot-carrier photovoltaics by providing flexibility in combining materials for band engineering and using nanophotonic effects control light absorption. Previously, an open-circuit voltage beyond Shockley–Queisser limit was demonstrated devices based on InAs–InP–InAs nanowire heterostructures. However, these first experiments, location absorption, therefore precise mechanism extraction, uncontrolled. In this Letter, we combine plasmonic...

10.1021/acs.nanolett.9b04873 article EN Nano Letters 2020-04-29

We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell which show that Auger-limited open-circuit voltages up to 787 mV (on 10 μm monocrystalline substrate) efficiencies 26.7% 150 may be possible for front-contacted devices exhibit low interface recombination velocity (IRV) at the GaP/Si employ random pyramidal texturing, detached silver reflector, rear locally diffused point...

10.1109/pvsc.2014.6925045 article EN 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) 2014-06-01

Hot-carrier solar cells are envisioned to utilize energy filtering extract power from photogenerated electron–hole pairs before they thermalize with the lattice, and thus potentially offer higher conversion efficiency compared conventional, single absorber cells. The of hot-carrier can be expected strongly depend on details process, a relationship which date has not been satisfactorily explored. Here, we establish conditions under separation in occur reversibly, that is, at maximum...

10.1088/1367-2630/17/9/095004 article EN cc-by New Journal of Physics 2015-09-21

Core-shell nanowires offer great potential to enhance the efficiency of light-emitting diodes (LEDs) and expand attainable wavelength range LEDs over whole visible spectrum. Additionally, nanowire (NW) can both improved light extraction emission enhancement if diameter wires is not larger than half (λ/2). However, AlGaInP have so far failed match high efficiencies traditional planar technologies, parameters limiting remain unidentified. In this work, we show by experimental theoretical...

10.1021/acs.nanolett.7b00759 article EN Nano Letters 2017-05-23

The separation of hot carriers in semiconductors is interest for applications such as thermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowires offer several potential advantages effective hot-carrier as: a high degree control flexibility heterostructure-based band engineering, increased temperatures compared to bulk, geometry well suited local light absorption. Indeed, InAs with short InP energy barrier have been observed produce electric power under global...

10.1088/1361-6528/ab9bd7 article EN cc-by Nanotechnology 2020-06-11

Recent developments in photonics include efficient nanoscale optoelectronic components and novel methods for subwavelength light manipulation. Here, we explore the potential offered by such devices as a substrate neuromorphic computing. We propose an artificial neural network which weighted connectivity between nodes is achieved emitting receiving overlapping signals inside shared quasi 2D waveguide. This decreases circuit footprint at least order of magnitude compared to existing optical...

10.1021/acsphotonics.0c01003 article EN cc-by ACS Photonics 2020-09-23

Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated 'hot carriers' before they cool lattice temperature. Hot have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not low-bandgap materials, where potential gain is highest. Recently, a high open-circuit voltage was an illuminated wurtzite InAs nanowire with low bandgap...

10.1088/1361-6528/aa8984 article EN Nanotechnology 2017-08-31

Extraction of charge carriers from a hot carrier solar cell using energy selective contacts, and the impact on limiting power conversion efficiency is analyzed. It shown that assuming isentropic heat into voltage implies zero output at all operating points. Under conditions output, lower voltages than in case are obtained due to irreversible entropy increase associated with flow. This lowers cell.

10.1063/1.4928750 article EN Applied Physics Letters 2015-08-17

Hot carrier solar cells depend critically on the energy relaxation dynamics of photo-generated carriers in an absorber material, where hot are extracted through selective contacts. Here we combine ensemble Monte Carlo (EMC) simulation with balance equation approach, to simulate microscopic processes and corresponding electron hole temperatures semiconductor quantum well (QW) cell structures, both under transient steady state illumination. We include nonequilibrium optical phonons, which a...

10.1109/pvsc.2012.6317914 article EN 2012-06-01

Towards the goal of designing, building and optimizing an operational hot carrier solar cell, components a cell numerical device model have been developed used to investigate operation device. A coupled electron phonon energy balance selective contact transport written. An investigation using compared performance differing extraction barrier structures. second current calculating portion study these codependent subsystems. In this paper, construction model, results from two aforementioned...

10.1109/pvsc.2013.6744322 article EN 2013-06-01

The extraction of charge carriers from a hot carrier solar cell using energy selective contacts, and the impact on limiting efficiency is analyzed. It shown that previous analyses imply zero power output at all operating points and, as consequence, conversion efficiencies are overestimates. relationship between more general thermodynamic models also discussed.

10.1109/pvsc.2014.6925666 article EN 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) 2014-06-01

Finite element modelling (FEM) is used to show that the addition of Au contacts a single horizontal InAs/InP heterostructure nanowire substantially alters nanowire's optical properties in comparison uncontacted case. It found can increase absorption efficiency, decrease scattering efficiency and shift location within nanowire. Localized surface plasmon resonances are develop at nanowire/contact interfaces infrared wavelengths contribute alteration response

10.1109/nusod.2016.7547006 article EN 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) 2016-07-01

Bangladesh is studied as an example of a developing nation which has overcome deployment challenges to achieve substantial growth in the utilization photovoltaic technology. Policies government related photovoltaics are outlined, overcoming described and avenues for system cost reductions given. It posited that lessons learned from may be applied similar markets order sustain or accelerate high rates rapid

10.1109/pvsc.2012.6318092 article EN 2012-06-01

Neural node components consisting of III-V nanowire devices are introduced. This allows for the construction a small footprint specialized neural network. A broadcasting strategy is developed which removes need inter-node wiring. As model system, an insect brain navigational circuit chosen and successfully emulated using introduced nodes network architecture. The results based on electronic transport simulations in each device as well finite-difference time-domain optical signals.

10.1109/nusod49422.2020.9217753 article EN 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) 2020-09-01

The separation of hot carriers in semiconductors is interest for applications such as thermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowires offer several potential advantages effective hot-carrier as: a high degree control flexibility heterostructure-based band engineering, increased temperatures compared to bulk, geometry well suited local light absorption. Indeed, InAs with short InP energy barrier have been observed produce electric power under global...

10.48550/arxiv.2004.01578 preprint EN other-oa arXiv (Cornell University) 2020-01-01
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