A5004226190- 2D Materials and Applications
- MXene and MAX Phase Materials
- Chalcogenide Semiconductor Thin Films
- Graphene research and applications
- Advanced Thermoelectric Materials and Devices
- Quantum Dots Synthesis And Properties
- Semiconductor materials and devices
- Catalytic Processes in Materials Science
- ZnO doping and properties
- Luminescence and Fluorescent Materials
- Plasma Diagnostics and Applications
- Plasma Applications and Diagnostics
- Thermal Radiation and Cooling Technologies
- Plasmonic and Surface Plasmon Research
- Copper Interconnects and Reliability
- Ferroelectric and Negative Capacitance Devices
- Electronic and Structural Properties of Oxides
- Strong Light-Matter Interactions
Eindhoven University of Technology
2016-2025
University of Michigan
2024
Plasma (Macedonia)
2020
The analysis of the gas phase chemistry a cold atmospheric plasma is fundamental step for more thorough understanding effects it can induce on target substrates.This work aims at investigating, by means optical spectroscopic techniques, kinetics O3, NO2 and NO3 produced Surface Dielectric Barrier Discharge.The phenomenon discharge poisoning (or ozone quenching) in static air was investigated varying electrical power density associated with source.In order to perform high time-resolution...
We utilize plasma-enhanced atomic layer deposition to synthesize two-dimensional Nb-doped WS2 and NbxW1–xSy alloys expand the range of properties improve performance 2D transition metal dichalcogenides for electronics catalysis. Using a supercycle process, films are prepared with compositions spanning from NbS3. While W-rich form crystalline disulfides, Nb-rich amorphous trisulfides. Through tuning composition films, electrical resistivity is reduced by 4 orders magnitude compared pure...
Atomic layer deposition (ALD) is renowned for its step coverage in porous substrates. Several emerging applications require a combination of this high with throughput ALD, like spatial ALD. Often, ALD performed at atmospheric pressure, and therefore, the effect reactor pressure on saturation dose investigated. inside substrates governed by three key parameters: reaction probability, pore aspect ratio, precursor diffusion coefficient, which latter one contains dependency. The these parameters...
Transition metal dichalcogenides (TMDs) are an important class of materials for future microelectronics. Of particular interest TMDs deposited by atomic layer deposition (ALD) since this technique allows both back-end-of-line (BEOL) compatible and the ability to create heavily doped regions contact formation. In work, we characterize ∼3 nm-thick NbxW1–xSy thin films grown plasma-enhanced ALD using gated transfer-length measurement (TLM) structures. An analysis with different Nb...
We present an experimental investigation of vibrational strong coupling C=O bonds in poly(methyl methacrylate) to surface lattice resonances (SLRs) on arrays gold particles infrared and Raman spectra. SLRs are generated from the enhanced radiative localized single by diffraction array. Compared previous studies Fabry-Perot cavities, particle provide a fully open system that easily couples with external radiation while having large field confinement close control tuning period array, as...
Abstract Miniaturization in integrated circuits requires that the Cu diffusion barriers located interconnects between metal line and dielectric material should scale down. Replacing conventional TaN with a 2D transition dichalcogenide barrier potentially offers opportunity to 1–2 nm thick barriers. In this article, it is demonstrated MoS 2 synthesized by atomic layer deposition (ALD) can be employed as barrier. ALD controlled growth process at back‐end‐of‐line (BEOL) compatible temperatures....
Two-dimensional MoS2 is a promising material for applications, including electronics and electrocatalysis. However, scalable methods capable of depositing at low temperatures are scarce. Herein, we present toolbox advanced plasma-enhanced atomic layer deposition (ALD) processes, producing wafer-scale polycrystalline films accurately controlled thickness. Our ALD processes based on two individually plasma exposures, one optimized the other modification. In this way, film properties can be...
Abstract The unique optical and electronic properties of two-dimensional transition metal dichalcogenides (2D TMDs) make them promising materials for applications in (opto-)electronics, catalysis more. Specifically, alloys 2D TMDs have broad potential owing to their composition-controlled properties. Several important challenges remain regarding controllable scalable fabrication these alloys, such as achieving control over atomic ordering (i.e. clustering or random mixing the atoms within...
We studied the nature of excitons in transition metal dichalcogenide alloy Mo0.6W0.4S2 compared to pure MoS2 and WS2 grown by atomic layer deposition (ALD). For this, optical absorption/transmission spectroscopy time-dependent density functional theory (TDDFT) were used. The effects temperature on A B exciton peak energies line widths transmission spectra between WS2. On increasing from 25 293 K, energy peaks decreases, while their width increases due exciton-phonon interactions....
The unique optical and electronic properties of two-dimensional transition metal dichalcogenides (2D TMDs) make them promising materials for applications in (opto-)electronics, catalysis more. Specifically, alloys 2D TMDs have broad potential owing to their composition-controlled properties. Several important challenges remain regarding controllable scalable fabrication these alloys, such as achieving control over atomic ordering (i.e. clustering or random mixing the atoms within layers). In...
We have studied the nature of excitons in transition metal dichalcogenide alloy Mo0.6W0.4 S2, compared to pure MoS2 and WS2 grown by atomic layer deposition (ALD). For this, optical absorption/transmission spectroscopy time-dependent density functional theory (TDDFT) were used. Effects temperature on A B exciton peak energies linewidths transmission spectra between WS2. On increasing from 25 K 293 energy peaks decreases, while their linewidth increases due exciton-phonon interactions. The...