GaN nanowires are promising for optical and optoelectronic applications because of their waveguiding properties large band gap. However, developing a precise, scalable, cost-effective fabrication method with high degree controllability to obtain high-aspect-ratio minimum crystal defects remains challenge. Here, we present scalable two-step top-down approach using interferometric lithography, which parameters can be controlled precisely achieve highly ordered arrays excellent quality desired...

The exceptional material properties of Lithium Niobate (LiNbO3) make it an excellent platform for a wide range RF, MEMS, phononic and photonic applications; however, nano-micro scale device concepts require high fidelity processing LN films. Here, we reported highly optimized methodology that achieves deep etch with nearly vertical smooth sidewalls. We demonstrated Ti/Al/Cr stack works perfectly as hard mask during long plasma dry etching, where periodically pausing the etching chemical...

Imaging of high-aspect-ratio nanostructures with sharp edges and straight walls in nanoscale metrology by atomic force microscopy (AFM) has been challenging due to the mechanical properties conical geometry majority available commercial tips. Here we report on fabrication GaN probes for structures enhance resolution AFM imaging improve durability nanowires were fabricated using bottom-up top-down techniques bonded Si cantilevers scan vertical trenches substrates. Over several scans,...

The patterning process in field-emission scanning probe lithography (FE-SPL), a high-resolution and cost-effective method for nanofabrication, is based on the field emission of electrons from ultrasharp tips close proximity to sample (distances below 100 nm). Thereby, emitted expose directly an ultrathin resist film. enhancement at tip apex crucial current, which follows Fowler–Nordheim theory. Despite success FE-SPL systematic experimental studies process, including determination radius...

A fundamental understanding and advancement of nanopatterning nanometrology are essential in the future development nanotechnology, atomic scale manipulation, quantum technology industries. Scanning probe-based patterning/imaging techniques have been attractive for many research groups to conduct their nanoscale device fabrication nanotechnology mainly due its cost-effective process; however, current tip materials these suffer from poor durability, limited resolution, relatively high costs....

Lithium/sulfur batteries are a promising candidate for energy storage as they capable of providing higher density in comparison to conventional Li-ion batteries.

We use a non-classical modified couple stress theory including the acceleration gradients (MCST-AG), to precisely demonstrate size dependency of mechanical properties gallium nitride (GaN) nanowires (NWs). The fundamental elastic constants, Young's modulus and length scales GaN NWs were estimated both experimentally, using novel experimental technique applied atomic force microscopy, theoretically, simulations. modulus, static dynamic scales, calculated with MCST-AG, found be 323 GPa, 13...

The importance of having an optimal material for fabricating Optically Transparent Antennas (OTAs) is crucial designing highly efficient antennas that can be integrated with photovoltaics. Conductor Oxides are promising OTA fabrication due to their capability being simultaneously transparent at optical frequencies and conductive within the radio frequency (RF) range. Here in this study, thin aluminum zinc oxide layers were co-sputtered onto Si a polycrystalline photovoltaic cell then...

Metal-assisted chemical etching is applied to fabricate deep, high aspect ratio nanopores in silicon. The authors’ simple and cost-effective fabrication process has proven capable of generating with diameters as small 30 nm, over the whole wafer surface (50.8 mm diameter). uses a thin layer DC-sputtered gold H2O2/H2O/HF treatment generate Au nanoislands. formation these nanoislands confirmed by scanning electron microscopy. In this paper, authors study effect Au-layer thickness on diameter...

In this work, we report progress on developing a multipurpose scanning probe cantilever applying gallium nitride nanowires as the tip. Gallium possess high potential probes due to their straight profile, tunable electrical and optical properties, Young’s Modulus, durability, high-yield fabrication process. Their wide bandgap enables them be pumped emit ultraviolet pulses which can used for imaging spectroscopy. They doped during growth electrically conductive, sharp tips obtained epitaxial...

We used the stable strain gradient theory including acceleration gradients to investigate classical and nonclassical mechanical properties of gallium nitride (GaN) nanowires (NWs). predicted static length scales, Young's modulus, shear modulus GaN NWs from experimental data. Combining these results with atomic simulations, we also found dynamic scale NWs. static, scales were be 318 GPa, 131 8 nm, 8.9 respectively, usable for demonstrating behaviors having diameters a few nm bulk dimensions....

Field emission scanning probe lithography (FE-SPL) is based on the exposure of a resist covered substrate with low energy electrons emitted from an ultra-sharp tip placed in close vicinity to sample. GaN nanowires (NWs) present high mechanical stability, suitable geometry for FE-SPL, and controllable electrical properties achieved by adjusting dopant concentration. Here, authors will long time results performed using NWs tips, mounted active probes, working as field electron emitters. Using...

Field emission scanning probe lithography (FE-SPL), which offers sub-10 nm resolution under ambient conditions, strongly relies on the quality and shape of applied tip. The technological development AFM systems is also connected to performance cantilever. Thereby, probes evolved from a simple passive deflection element complex MEMS through integration functional groups, such as piezoresistive detection sensors bimaterial based actuators. Here, authors show actual trends developments...

Damage induced by the implantation of beryllium in n-type GaSb and its removal Rapid Thermal Annealing (RTA) are studied detail Atomic Force Microscopy (AFM), Cross Sectional Transmission Electron (XTEM) Energy Dispersive X-ray Spectroscopy (EDS). RTA has been implemented with different times temperatures order to optimize ion activation avoid Sb outdiffusion during process. Results indicate a lattice quality that is close pristine for samples annealed at 600 °C 10s using thick Si3N4 capping...

Epitaxial single-domain LiNbO 3 thin-films are realized using a novel nanocomposite seeding method. Full microstructure characterization and optical property measurement is conducted as first step to demonstrate viability of this material for integrated photonics applications.

The unique growth conditions of BluGlass' low temperature technology Remote Plasma Chemical Vapour Deposition (RPCVD) are capable producing Activate As-Grown (AAG) buried p-GaN layers. This ability renders RPCVD a highly attractive technique to produce GaN-based Tunnel Junctions (TJ) without the complexities associated with post-growth lateral activation steps required by MOCVD. In this paper we discuss use hybrid RPCVD/MOCVD TJs for MOCVD-grown ridge guide laser diode (LD) applications....

A comprehensive microstructure characterization is performed and optical properties are measured. piezoelectric acoustic resonator device developed to demonstrate the future potential of nanocomposite-seeded approach for high-quality LNO growth radio frequency (RF) applications.

In this study we introduce Gallium Nitride (GaN) nanowire (NW) as high aspect ratio tip with excellent durability for nano-scale metrology. GaN NWs have superior mechanical property and young modulus compare to commercial Si Carbon tips which results in having less bending issue during measurement. The are prepared via two different methods: i) Catalyst-free selected area growth, using Metal Organic Chemical Vapor Deposition (MOCVD), ii) top-down approach by employing Au nanoparticles the...

Metal Assisted Chemical Etching (MACE) is applied for generation of SiNWs (SiNWs). For the first time, curved are directly generated using MACE approach without any surface post-treatment after formation SiNWs. This leaves intact changing composition. comparison, straight under same etchant and catalyst conditions. The nanostructures show a much higher Photo Luminescence (PL) compared to PLs in both cases nanowires believed be due quantum confinement effects on Blue shift PL spectrum...

A comprehensive microstructure characterization is performed and optical properties are measured. piezoelectric acoustic resonator device developed to demonstrate the future potential of nanocomposite-seeded approach for high-quality LNO growth radio frequency (RF) applications.