A5101907289- Optical Network Technologies
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Solid State Laser Technologies
- Photonic Crystal and Fiber Optics
- Advanced Fiber Laser Technologies
- Advanced Photonic Communication Systems
- Advanced Fiber Optic Sensors
- Laser Design and Applications
- Optical Coherence Tomography Applications
- Laser-Matter Interactions and Applications
- Neural Networks and Reservoir Computing
- Spectroscopy and Laser Applications
- Balance, Gait, and Falls Prevention
- Spacecraft Dynamics and Control
- Semiconductor Quantum Structures and Devices
- Space Satellite Systems and Control
- Optical Systems and Laser Technology
- Spectroscopy Techniques in Biomedical and Chemical Research
- Quantum optics and atomic interactions
- Advanced Sensor and Energy Harvesting Materials
- Astro and Planetary Science
- Integrated Circuits and Semiconductor Failure Analysis
- Muscle activation and electromyography studies
Furukawa Electric (Japan)
1996-2024
Furukawa Electric (United Kingdom)
2001-2016
Kinjo University
2012
University of California, Santa Barbara
2004
University of California System
2003
Telecommunications Advancement Foundation
1999
We demonstrate a 32 × path-independent-insertion-loss optical path switch that integrates 1024 thermooptic Mach-Zehnder switches and 961 intersections on small, 11 25 mm2 die. The is fabricated 300-mm-diameter silicon-on-insulator wafer by complementary metal-oxide semiconductor-compatible process with advanced ArF immersion lithography. For reliable electrical packaging, the chip flip-chip bonded to ceramic interposer arranges electrodes in 0.5-mm pitch land grid array. on-chip loss...
We demonstrate an ultra-compact 32×32 path-independent-insertion-loss optical switch that integrates 1024 thermooptic MZ switches on SOI platform using ArF immersion lithography. On-chip loss of 19.7 dB and estimated crosstalk −20 are achieved.
We propose and experimentally demonstrate an optimised bidirectional pumping scheme that realizes a less than 0.7 dB flatness over C- L-bands for both Raman gain optical noise figure, simultaneously. In order to use forward-pumping the proposed method, new type of pump laser having low relative intensity is also developed.
We investigate the high-temperature characteristics and temperature tuning of long-wavelength vertical-cavity semiconductor optical amplifiers (VCSOA). The shift peak-signal gain is shown to depend on mirror reflectivity VCSOA. Experimental results a 1.3-μm VCSOA are presented. demonstrate 10 dB fiber-to-fiber over range approximately 8 nm.
In this study, we demonstrate optical preamplification at 1550 nm using a vertical-cavity semiconductor amplifier (VCSOA). At 10 Gb/s, receiver sensitivity of -28.5 dBm was achieved for 13 dB fiber-to-fiber gain. This corresponds to an improvement in the 9.7 dB. We also evaluated performance 20 and 40 Gb/s. A 4.7-dB power penalty measured Gb/s with 6-dB Theoretical simulations show that pattern dependence can be mitigated VCSOA lower mirror reflectivity.
We describe the challenges and solutions for future narrow linewidth lasers with small footprint. fabricated DR laser array based narrower linewiedth TLS. introduce ITXA of a co-packaged DFB TLS InP-based modulator.
Highly nonlinear fibers which can be utilized in all-optical signal processing is introduced. Characteristics of highly fiber and requirements from various applications are summarized.
High power pump lasers in wavelength range from 1400 to 1520 nm, namely 14XX nm lasers, are heavily demanded for Raman amplification as well existing Erbium doped fiber (EDF) recent Dense Wavelength Division Multiplexing (DWDM) optical communication networks.We achieved the record highest output laser of 400 mW at single mode end a production level. Rollover coupled was over 500 this device. The module with newly designed package operated up case temperature 75 degrees C, and chip 25 C. This...
Recent progress of high power and reliable 1480nm/14xx-nm pump lasers as FOL14** series FITEL is reported. Field reliability was estimated for over one million shipments failure mode analyzed by returned products.
Get PDF Email Share with Facebook Tweet This Post on reddit LinkedIn Add to CiteULike Mendeley BibSonomy Citation Copy Text T. Kimura, N. Tsukiji, A. Iketani, H. Murata, and Y. Ikegami, "High Temperature Operation Quarter Watt 1480nm Pump LD Module," in Optical Amplifiers their Applications, S. Kinoshita, J. Livas, G. van den Hoven, eds., Vol. 30 of Trends Optics Photonics (Optica Publishing Group, 1999), paper ThD12. Export BibTex Endnote (RIS) HTML Plain alert Save article
We have fabricated GaP-AlGaP tapered waveguide semiconductor Raman amplifiers, and analyzed the effect of tapering in pulse-pumped high-gain operation. The finesse measurement 80-ps pulse pumped amplification experiment were performed. Although has caused additional optical loss, highest gain 23 dB been obtained for a with input facet 6.0 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> back 2.9 at averaged power 170 mW (peak 26 W). It...
The requirements for 14XX nm pumps with wavelength range from 1400 to 1520 are not only higher output power but also lower degree of polarization (DOP) preventing the problem due polarization-dependent-gain in Raman amplifier. It is expected that co-propagating pumping could improve system performances comparison using counter pumping. To apply this scheme, pump lasers should have enough low relative intensity noise (RIN) characteristics. In paper, we will describe two novel concepts 14XXnm...
We measure characteristics of a transmitted WDM signal in an 80 km-long SMF under bi-directionally pumped DRA with incoherent-forward and coherent-backward pumps. The shows OSNR 50.0 dB RIN less than -140 dB/Hz.
We demonstrate forward-pumped distributed Raman amplification in C and L bands using semiconductor wideband incoherent optical sources as first-order pumps including newly developed for band amplification. confirm flat on-off gain low relative intensity noise of transmitted signals.
A semiconductor Raman laser with a waveguide in which pump beam transmits fundamental mode, can be used as an optical heterodyne demodulator, is discussed. As result of the improved growth process and resonator construction, threshold power low 300 mW has been achieved. The internal loss discussed, tapered-waveguide fabricated method to realise further lower operation, its lasing operation demonstrated.
The newly developed hybrid module with integrated polarisation beam combiner (PBC) achieved a maximum fibre output power of over 1 W. At the case temperature 75 degrees, new showed output-power 775 mW, and nominal operating around 650 in conjunction degree (DOP) as low 5%.
We demonstrated the advantage of inner-grating-multi-mode (iGM) lasers for suppressing Stimulated-Brillouin-scattering (SBS) in comparison with normal single-mode DFB lasers. found that iGM laser over 18 longitudinal-modes successfully reduces SBS down to Rayleigh-scattering level.
Effective reflectivity of fiber Bragg grating (FBG)-locked 980-nm laser module was analyzed relating to spatial hole burning. The optimized external-cavity design realized wavelength fluctuation under /spl plusmn/0.3 nm. Power degradation by FBG below 10%. End-of-life guaranteed power exceeded 150 mW@250 mA/spl sim/300 mA.
The gain measurement of a semiconductor Raman amplifier with GaP-AlGap waveguide structure pumped by high-intensity pulse source has been measured for use as basis the time gate amplification light. A 10dB obtained 5mm long back reflector. also performed which both faces antireflection coated. From this measurement, it is confirmed that principally from backward scattering rather than forward scattering. It shown dominance limits minimum
Get PDF Email Share with Facebook Tweet This Post on reddit LinkedIn Add to CiteULike Mendeley BibSonomy Citation Copy Text G. Cole, Q. Chen, S. Björlin, T. Kimura, Wu, C. Wang, J. Bowers, and N. MacDonald, "Wavelength selection in MEMS tunable vertical-cavity SOAs," Optical Amplifiers Their Applications/Integrated Photonics Research, Technical Digest (CD) (Optica Publishing Group, 2004), paper OMB3. Export BibTex Endnote (RIS) HTML Plain alert Save article
We describe μ-ITLA characteristics with DFB/DR laser array based narrow linewidth tunable laser. also introduce ITXA of a co-packaged DFB and InP-based modulator for metro digital coherent application.