Y. Wang

ORCID: 0009-0000-5785-5681
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About
Contact & Profiles
Research Areas
  • ZnO doping and properties
  • Magnetic properties of thin films
  • Magnetic Properties and Applications
  • Microstructure and Mechanical Properties of Steels
  • Metallic Glasses and Amorphous Alloys
  • Copper-based nanomaterials and applications
  • Ga2O3 and related materials
  • Radiation Detection and Scintillator Technologies
  • Advanced Condensed Matter Physics
  • Ammonia Synthesis and Nitrogen Reduction
  • Electronic and Structural Properties of Oxides
  • Semiconductor materials and interfaces
  • Semiconductor materials and devices
  • Hydrogen embrittlement and corrosion behaviors in metals
  • Metallurgy and Material Forming
  • Advanced Photocatalysis Techniques
  • Metal Alloys Wear and Properties
  • Metal Forming Simulation Techniques
  • Thin-Film Transistor Technologies
  • Radiation Therapy and Dosimetry
  • Nanomaterials for catalytic reactions
  • Welding Techniques and Residual Stresses
  • Graphite, nuclear technology, radiation studies

Tsinghua University
2023

Zhejiang Normal University
2023

Helmholtz-Zentrum Dresden-Rossendorf
2014-2017

Prokhorov General Physics Institute
2016

Institute on Laser and Information Technologies
2016

Lomonosov Moscow State University
2016

Kurchatov Institute
2016

Moscow Engineering Physics Institute
2016

Institute of Radio-Engineering and Electronics
2016

Moscow Institute of Physics and Technology
2016

As a sustainable approach for N 2 fixation, electrocatalytic reduction reaction (N RR) to produce ammonia (NH 3 ) is highly desirable with precise understanding the structure-activity relationship of electrocatalysts. Here, firstly, we obtain novel carbon-supported oxygen-coordinated single-Fe-atom catalyst efficient production from RR. Based on such new type RR electrocatalyst, by combining operando X-ray absorption spectra (XAS) density function theory calculation, reveal significantly...

10.1073/pnas.2301011120 article EN cc-by-nc-nd Proceedings of the National Academy of Sciences 2023-06-12

The results of a comprehensive study magnetic, magneto-transport and structural properties nonstoichiometric MnxSi1-x (x ≈ 0.51-0.52) films grown by the Pulsed Laser Deposition (PLD) technique onto Al2O3(0001) single crystal substrates at T = 340°C are present. A highlight used PLD method is non-conventional (“shadow”) geometry with Kr as scattering gas during sample growth. It found that exhibit high-temperature (HT) ferromagnetism (FM) Curie temperature TC ∼ 370 K accompanied positive sign...

10.1063/1.4941357 article EN cc-by AIP Advances 2016-01-01

The electronic band structure of the (Ga,Mn)As system has been one most intriguing problems in solid state physics over past two decades. Determination evolution with increasing Mn concentration is a key issue to understand origin ferromagnetism. Here, we present room-temperature photoluminescence and ellipsometry measurements $\mathrm{G}{\mathrm{a}}_{100%\ensuremath{-}x}\mathrm{M}{\mathrm{n}}_{x}\mathrm{As}$ alloy. upshift valence proven by redshift room temperature near band-gap emission...

10.1103/physrevb.92.224407 article EN Physical Review B 2015-12-04

Thin films of MnxSi1−x alloys with different Mn concentration grown by the pulsed-laser deposition (PLD) method onto Al2O3 (0001) substrate were investigated in temperature range 4–300 K using ferromagnetic resonance (FMR) measurements wide frequencies and magnetic fields . For samples , FMR data show clear evidence ferromagnetism (FM) high Curie temperatures These demonstrate complex unusual character anisotropy described frame phenomenological model as a combination essential second-order...

10.1209/0295-5075/115/37008 article EN EPL (Europhysics Letters) 2016-08-01

Ge-based diluted magnetic semiconductors have drawn extensive attention over the past decades due to their potential be applied in spintronic devices and integrated with mainstream Si microelectronics as well. The hole-mediated effect provides possibility realize control of properties by electrical free carriers. In this contribution, we will present X-ray absorption spectroscopy Mn implanted Ge annealed flash lamp, which is a sub-second annealing method compatible chip-technology.

10.1109/intmag.2015.7157638 article EN 2015 IEEE Magnetics Conference (INTERMAG) 2015-05-01
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