Yuru Lai

ORCID: 0009-0000-6058-1378
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About
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Research Areas
  • ZnO doping and properties
  • Ga2O3 and related materials
  • Parasite Biology and Host Interactions
  • Physics of Superconductivity and Magnetism
  • Electronic and Structural Properties of Oxides
  • Magnetic properties of thin films
  • Semiconductor materials and devices
  • Magnetic Properties of Alloys
  • Parasites and Host Interactions

Sun Yat-sen University
1997-2025

This study investigates the broad-energy-spectrum reactor-neutron irradiation effects on electrical characteristics of Ni/β-Ga2O3 Schottky barrier diodes (SBDs), where irradiated neutron fluence was up to 1 × 1016 cm−2. On one hand, high cm−2 resulted in a reduction forward current density by two orders magnitude and an extremely on-resistance property due radiation-generated considerable series resistance SBD. other brought little influence contact, since extracted ideality factor height...

10.1063/5.0185271 article EN Applied Physics Letters 2024-01-01

Interview with Hyman Bass, whose mathematical life has spanned seven decades.

10.48550/arxiv.2502.09751 preprint EN arXiv (Cornell University) 2025-02-13

X-ray response performances of a p-NiO/β-Ga2O3 hetero-junction diode (HJD) detector were studied before and after γ-ray irradiation at −200 V, with total dose 13.5 kGy(Si). The the HJD influenced by trap-assistant conductive process under reverse bias, which exhibited an increasing net (response) current, nonlinearity, long time. After irradiation, Poole–Frenkel emission (PFE) dominated leakage current HJDs due to higher electric field caused increased carrier concentration β-Ga2O3. This...

10.3390/mi16030339 article EN cc-by Micromachines 2025-03-14

This work reveals the significant advantages of high-temperature nitrogen (N) ion implantation for fabricating current-blocking layers (CBLs) in β-Ga2O3. A comparative investigation on structural and electrical properties N-implanted β-Ga2O3 was conducted under different temperatures post-implantation annealing (PIA) conditions. The results showed that (HTI) at 500 °C, compared to room-temperature (RTI), introduced fewer defects less lattice distortion HTI-formed CBL demonstrated a far...

10.1063/5.0256968 article EN Applied Physics Letters 2025-03-01

Gallium Oxide (Ga 2 O 3 ) devices have shown great potential for radiation detection. However, developing Ga detectors pulsed monitoring is still challenging, which requires high response sensitivity ( R ), low noise, time resolution, and linear outputs. Herein, a vertical p‐NiO/ β‐ heterojunction diode (HJD) fabricated its performance in X‐ray detection analyzed. Benefiting from the quality of p‐n heterojunction, HJD exhibits low‐leakage current density less than 1.73 × 10 −7 A cm −2 at 100...

10.1002/pssb.202400363 article EN physica status solidi (b) 2024-09-20

The parasitic zoonosis, opisthorchis viverrini has been an important public health problem in many parts of the globe. In Thailand, fish-borne zoonosis is highly spread northern and northeastern regions, where a large impact cholangiocarcinoma occurs, crucial source liver cancer. rare occasions reports date published about Opisthorchiasis middle zone Myanmar. our study, total few species fish borne trematode metacercariae i.e.; three kind small intestinal flukes, family Heterophyidae;...

10.52939/ijg.v18i2.2165 article EN International Journal of Geoinformatics 2022-03-29
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