A5017950631- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Fuel Cells and Related Materials
- Membrane-based Ion Separation Techniques
- Electrocatalysts for Energy Conversion
- Energy, Environment, Economic Growth
- Advancements in Photolithography Techniques
- Environmental Impact and Sustainability
- Integrated Circuits and Semiconductor Failure Analysis
- Climate Change Policy and Economics
- Advanced Surface Polishing Techniques
- Agricultural risk and resilience
- Environmental Sustainability in Business
- Regional Development and Policy
- Advanced Optical Sensing Technologies
- Silicon Carbide Semiconductor Technologies
- 3D IC and TSV technologies
- Hydraulic Fracturing and Reservoir Analysis
- Surface Roughness and Optical Measurements
- Philippine History and Culture
- Digital Transformation in Industry
- Industrial Vision Systems and Defect Detection
- Lattice Boltzmann Simulation Studies
- Impact of AI and Big Data on Business and Society
Shandong University of Science and Technology
2023-2024
Chinese PLA General Hospital
2024
Shenzhen Municipal Development and Reform Commission
2023
Development Research Center
2023
Xi'an Jiaotong University
2021-2023
Shandong University
2022
Centre d'Etudes et de Recherches Appliquées à la Gestion
2019
Peking University
2014-2018
Institute of Microelectronics
2014-2018
State Key Laboratory on Integrated Optoelectronics
2017
In this paper, a novel TFET design, called Pocket-mSTFET (PMS-TFET), is proposed and experimentally demonstrated by evaluating the performance from device metrics to circuit implementation for low-power SoC applications. For first time, design perspective, TFETs in terms of I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> , xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> subthreshold slope (SS), output behavior, capacitance,...
In this letter, a novel hetero-stacked TFET (HS-TFET) is experimentally demonstrated and optimized for the first time, which can effectively suppress subthreshold slope (SS) degradation without leakage current increase through self-adaptively replenishing with bandgap engineering, greatly alleviating critical issue of high average SS in conventional TFETs. Based on CMOS-compatible technology, fabricated HS-TFETs vertically stacked Si-Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
We have first manufactured Complementary Tunnel-FETs (C-TFETs) in standard 12-inch CMOS foundry. With abrupt tunnel junction consideration for improved TFET performance, technology of monolithically integrating C-TFET with is developed. Planar Si inverter also demonstrated, indicating a new electrical isolation requirement between neighboring devices practical integration on bulk substrate. For high-volume production, the variability C-TFETs are experimentally investigated, demonstrating an...
Ischemic stroke (IS), a major cause of death and disability globally, requires innovative therapeutic approaches due to its complex pathology. Nature medicine (NM) offers promising treatments through bioactive compounds, which target the multifaceted nature stroke-induced damage. However, clinical application NM is limited by challenges in bioavailability specificity. This review article presents an advanced perspective on integrating nanotechnology with create potent nanodelivery systems...
As one of the important sources lowfrequency noise, random telegraph noise (RTN) in tunnel FET (TFET) has attracted growing attention recently. However, there is still lack explanation for high-amplitude RTN, which may cause serious variability and reliability problems to TFET-based ultralow-power circuits. In this paper, we experimentally investigate RTN amplitude characteristics TFETs, revealing mechanism highamplitude RTN. It found that nonuniform distribution band-to-band tunneling...
Low power applications have led to a boom in researches on new circuits based steep-slope transistors, of which the objective is overcome MOSFET's drawback inevitable increasing leakage while maintaining acceptable performance low voltage operation. Among those emerging Tunnel FET (TFET) becomes most promising one due its off current and compatibility with CMOS process. In order guide application improvement TFET, this paper from circuit-level perspective, utilizing newly defined...
Understanding multiphase flow and gas transport occurring in electrodes is crucial for improving the performance of proton exchange membrane fuel cells. In present study, a pore-scale model using lattice Boltzmann method (LBM) was proposed to study coupled processes air–water two-phase oxygen reactive porous structures diffusion layer (GDL) fractures microscopic (MPL). Three-dimensional numerical results show that liquid water generation rate gradually reduced as consumption reaction...
Energy efficiency has become the main concern of IC technology. Tunnel FET (TFET) is recognized to possess superiority energy over MOSFET at ultralow voltage, while variability might limit voltage reduction and thus saving. Recently, device source doping gradient (SDG) found be dominant variation in TFET. In this paper, for first time, with awareness SDG variation, TFET-based circuits different activity factors (α) comprehensively reassessed optimization strategy provided. It that TFET will...
This paper discusses a kind of novel steep-slope switch device, named as multi-finger Schottky-Barrier TFET (MFSB-TFET), with hybrid adaptive operation mechanism, for higher on current, steeper slope well low off current. With the state dominated by Schottky injection transition region band-to-band tunneling and current greatly suppressed increased effective barrier height, proposed silicon-based MFSB-TFET has experimentally demonstrated SS, high on-off ratio, exhibiting great potentials...
A kind of new steep-slope device with hybrid operation mechanism, which is multi-finger Schottky barrier TFET (MFSB-TFET), presented for the comprehensive electric properties enhancement, by using strong points but avoiding critical issues different mechanisms. The can experimentally achieve higher on current from dominant current, appreciably reduced off-leakage self-depletion effect, and steeper slope tunneling enhanced junction field. From circuit design perspective, MFSB-TFET performance...
In this work, the power, performance and area of novel multi-Finger Schottky-Barrier Tunnel FET (mFSB-TFET) are benchmarked with standard MOSFET low-power from device circuit level. Under same penalty, mFSB-TFET circuits could obtain comparable delay significantly lower static total power consumption by orders magnitude than circuits. The advantages more significant at ultra-low working voltage, even compared circuits, indicating great practical potential for application.
Metrology target quality highly impacts overlay measurement accuracy and robustness. Factors that can affect include pattern symmetry, uniformity over one target, variation within wafer, wafer to lot lot. Historically, multiple studies have revealed how metrology asymmetry causes inaccuracy issues. Target design address induced error, some extent, by providing a process compatible design. targets synchronously consider compatibility, system capability basic rule. In cases, the minimum rule...
With the development of advanced technology nodes, specifications for overlay has become more tightened. Furthermore, critical dimension device structure becomes smaller and mark formed based on design rule following can be impacted by process variation. In this paper, asymmetry fin was investigated, phenomenon center symmetry changing across wafer found. The effect an asymmetric target profile performance simulated KLA's Metrology Target Design (MTD) software. It found that OVL accuracy...
In this work, the impacts of electrical characteristics Tunnel FET (TFET) on SRAM design are systemically investigated for first time from perspective memory array. A novel 10T TFET is also proposed to overcome challenges and improve circuit stability. By using a calibrated compact model, simulated static power can be much lower than traditional 6T MOSFET SRAM, especially at low supply voltage 0.5V. addition, cell's stability largely improved with largest noise margin compared reported 7T SRAM.
Reducing water flooding and enhancing oxygen transport in the gas diffusion layer (GDL) of proton exchange membrane fuel cells are great importance for optimizing cell performance.In this study, a porescale model based on lattice Boltzmann method is proposed, which considers two-phase flow, electrochemical reaction.The pore-scale then adopted to explore multiphase reactive processes GDL.Effects compression liquid saturation current density explored.It found that, by increasing ratio from 0.2...
This paper investigates the impact of China's carbon trading pilot policy on corporate environmental, social and governance (ESG) performance. The results show that firms, especially state-owned large enterprises, have significantly higher ESG scores. study also examines heterogeneity impacts finds enterprises in regions with weak environmental regulations less financial pressure exhibit better performance, while plays a negative role stronger or greater pressure. Overall, this contributes...
Tunnel FET (TFET) has attracted much attention as one of promising candidates MOSFET for low power applications due to its capability sub-60mV/dec subthreshold slope (SS) at room temperature [1]. It a gated p-i-n structure switched by band-to-band tunneling (BTBT) mechanism. However, it is difficult form abrupt source doping profile in the experiments sharp band bending junction, resulting relatively large SS experimental demonstrations compared with ideally theoretical expectations. Another...
In the above paper, there is an error in information of corresponding author’s email address. The corrected address provided.