A5030920393- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Silicon Carbide Semiconductor Technologies
- ZnO doping and properties
- Semiconductor Quantum Structures and Devices
- Photocathodes and Microchannel Plates
- Power Line Communications and Noise
- Wireless Communication Networks Research
- Metal and Thin Film Mechanics
- Advanced Wireless Communication Techniques
- Semiconductor materials and devices
- Optical Wireless Communication Technologies
Shanghai Research Center for Wireless Communications
2023
Shanghai Jiao Tong University
2023
South China Normal University
2020-2023
Prior to MOCVD epitaxial growth, an AlN buffer layer was deposited on the sapphire substrate by magnetron sputtering, and then a series of AlGaN/GaN HEMTs were prepared using improved wafer. The performance analysis wafer fabricated is reported in this work. I–V test results two adjacent ohmic pads that active region between them isolated separated 30 μm, show current found be as low 12 nA/mm when applied bias 100 V, breakdown voltage exceeds 1200 V. Furthermore, with sputtered showed...
In this manuscript, we introduce an innovative approach to attenuate both Inter-symbol Interference (ISI) and Co-channel (CCI) in the realm of aeronautical telemetry applications, employing Shaped Offset Quadrature Phase Shift Keying Telemetry Group version (SOQPSK-TG) waveforms. Our method incorporates utilization space-time Wiener filters, subject specific constraints. By taking into account spatial temporal correlations inherent expected interfering signals, have integrated a constraint...