A5025704514- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Quantum and electron transport phenomena
- Quantum Dots Synthesis And Properties
- Molecular Junctions and Nanostructures
- Terahertz technology and applications
- Semiconductor Lasers and Optical Devices
- Semiconductor materials and devices
- Black Holes and Theoretical Physics
- Quantum optics and atomic interactions
- Gold and Silver Nanoparticles Synthesis and Applications
- Spectroscopy and Laser Applications
- Photonic and Optical Devices
- Quantum Information and Cryptography
- Plasmonic and Surface Plasmon Research
- Cold Atom Physics and Bose-Einstein Condensates
- Quantum Chromodynamics and Particle Interactions
- 2D Materials and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Particle physics theoretical and experimental studies
- Chalcogenide Semiconductor Thin Films
Queens College, CUNY
2011-2017
The Graduate Center, CUNY
2011-2017
Centre for Quantum Technologies
2012
National University of Singapore
2012
Stevens Institute of Technology
1968
A spectral analysis of the Aharonov-Bohm (AB) oscillation in magneto-photoluminescence intensity was performed for stacked type-II ZnTe/ZnSe quantum dots (QDs). Very narrow AB oscillations (∼0.3 T) allowed probing both lateral size distribution stack ensemble QDs and excitons as determined by electronic orbit with sub-nanometer precision. Two sets stacks excitonic 18.2 17.5 nm are to be present sample.
For submonolayer quantum dot (QD) based photonic devices, size and density of QDs are critical parameters, the probing which requires indirect methods. We report determination lateral distribution type-II ZnTe/ZnSe stacked QDs, on spectral analysis optical signature Aharanov-Bohm (AB) excitons, complemented by photoluminescence studies, secondary-ion mass spectroscopy, numerical calculations. Numerical calculations employed to determine AB transition magnetic field as a function QD radius....
Robust and narrow Aharonov-Bohm (AB) oscillations were observed in magneto-photoluminescence intensity of stacked ZnTe/ZnSe quantum dots (QDs) due to the presence built-in electric field. A spectral analysis such AB allowed for qualitative probing lateral size type-II excitons. Two samples grown using different growth sequences analyzed compared. The magnetic field value at which transition takes place changed across spectra one samples, indicating a two distinct QD stacks; ``double peak''...
We examine the temperature dependence of visibility excitonic Aharonov-Bohm peak in type-II quantum dots. obtain a functional that is similar to determined by transport experiments, namely, with ${T}^{\ensuremath{-}1}$ term due electron-electron collisions and ${T}^{\ensuremath{-}3}$ electron-phonon interactions. However, magnitude latter much smaller than for electrons interaction strength exciton-phonon coupling. Such suppressed ushers way all-optical studies decoherence processes...
Abstract We report our recent experiments with type‐II ZnTe/ZnSe stacked submonolayer quantum dots that show the dependence of photoluminescence (PL) emission energy on magnetic field. This is explained as due to excitonic Aharonov‐Bohm (AB) effect. The AB oscillations in are observed for each contributing bands and correlated changes magneto‐PL intensity. propose interplay magneto‐excitonic behavior, Coulomb interaction mixing angular momentum states responsible behavior excitons depending...
Two-dimensional transition metal di-chalcogenide semiconductors provide unique possibilities to investigate strongly confined excitonic physics and a plasmonic platform integrable such materials constitutes hybrid system that can be of interest enable manipulation their cumulative optical properties. Here we report tuning emission from monolayer WSe2, mechanically exfoliated on top periodic two dimensional array elliptical gold (Au) nanodiscs. By exploiting the polarization-dependent nature...