A. Jakubowski

ORCID: 0009-0001-8989-2337
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About
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Research Areas
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Integrated Circuits and Semiconductor Failure Analysis
  • Semiconductor materials and interfaces
  • Silicon Carbide Semiconductor Technologies
  • Silicon Nanostructures and Photoluminescence
  • Metal and Thin Film Mechanics
  • Diamond and Carbon-based Materials Research
  • Silicon and Solar Cell Technologies
  • Thin-Film Transistor Technologies
  • Nuclear Physics and Applications
  • Radiopharmaceutical Chemistry and Applications
  • GaN-based semiconductor devices and materials
  • Particle accelerators and beam dynamics
  • Analytical Chemistry and Sensors
  • Surface and Thin Film Phenomena
  • Carbon Nanotubes in Composites
  • Microfluidic and Capillary Electrophoresis Applications
  • Plasma Diagnostics and Applications
  • Phase-change materials and chalcogenides
  • Nanowire Synthesis and Applications
  • X-ray Spectroscopy and Fluorescence Analysis
  • Boron Compounds in Chemistry
  • Ga2O3 and related materials
  • Gas Sensing Nanomaterials and Sensors

Łukasiewicz Research Network - Rail Vehicles Institute
2023

University of Warsaw
1985-2018

Warsaw University of Technology
2002-2016

Maksymilian Pluta Institute of Applied Optics
2003

Institute of Electron Technology
1980-1992

The internal α-particle beam of the Warsaw Heavy Ion Cyclotron was used to produce research quantities medically interesting Sc radioisotopes from natural Ca and K isotopically enriched 42Ca targets. targets were made metallic calcium, calcium carbonate potassium chloride. New data on production yields impurities generated during target irradiations are presented for positron emitters 43Sc, 44gSc 44mSc. different paths long lived 44mSc/44gSc in vivo generator, proposed by ARRONAX team, using...

10.1016/j.apradiso.2016.07.001 article EN cc-by-nc-nd Applied Radiation and Isotopes 2016-07-04

The history of semiconductors is presented beginning with the first documented observation a semiconductor effect (Faraday), through development devices (point-contact rectifiers and transistors, early field-effect transistors) theory up to contemporary (SOI multigate devices).

10.26636/jtit.2010.1.1015 article EN cc-by Journal of Telecommunications and Information Technology 2010-03-30

Recently, significant interest in (44)Sc as a tracer for positron emission tomography (PET) imaging has been observed. Unfortunately, the co-emission by of high-energy γ rays (E = 1157, 1499 keV) causes dangerous increase radiation dose to patients and clinical staff. However, it is possible produce another radionuclide scandium-(43)Sc-having properties similar but characterized much lower energy concurrent gamma emissions. This work presents production route (43)Sc α irradiation natural...

10.1186/s40658-015-0136-x article EN cc-by EJNMMI Physics 2015-12-01

It is shown that in some cases of the metal-insulator-semiconductor systems electron tunnel current may be expressed form one-dimensional integral with modified ‘‘supply function’’ even if effective mass not same each region system. The proposed formula together description semiconductor space charge (which considered paper) used for modeling current-voltage characteristics, e.g., metal–SiO2–Si〈100〉 diodes. considerations are based on total energy and transverse wave-vector conservation assumptions.

10.1063/1.335817 article EN Journal of Applied Physics 1985-10-15

2014 On a élaboré deux nouvelles méthodes de détermination du potentiel contact dans les structures MOS.On mis ces en pratique et valeurs 03A6MS obtenues par elles ainsi que celles d'autres auteurs s'accordent bien.Les sont simples plus faciles à appliquer généralement utilisées la 03A6MS.Abstract.2014 Two new techniques for potential difference determination in MOS have been developed.These were applied practice yielding values remaining close agreement with each other, and within the range...

10.1051/rphysap:01982001708047300 article FR Revue de Physique Appliquée 1982-01-01

This paper presents a new method of optoelectronic determination cow fertility, based on microfluidic fiber-optic capillary sensor.The current state the art sensors is discussed briefly along with aspects instrumentation and applications.Unlike classical which are changes in light propagation inside fiber response to external conditions, optical rely transmission within capillaries filled liquid be analyzed.This approach opens up interesting possibilities for application sensors, while...

10.12693/aphyspola.118.1093 article EN Acta Physica Polonica A 2010-12-01

A new measurement technique of work function differences in MOS structures is described. Results obtained for the AlSiO2Si system are presented and discussed comparison with results by other authors. [Russian Text Ignored].

10.1002/pssa.2210650129 article EN physica status solidi (a) 1981-05-16

As the most ambitious concept of isotope separation on line (ISOL) facility, EURISOL aims at producing unprecedented intensities post-accelerated radioactive isotopes. Charge breeding, which transforms charge state beams from 1+ to an n+ prior post-acceleration, is a key technology has overcome following challenges: high states for energies, efficiency, rapidity and purity. On roadmap EURISOL, dedicated R&D being undertaken push forward frontiers present state-of-the-art techniques use...

10.1063/1.3665960 article EN Review of Scientific Instruments 2012-02-01

Optical capillaries are used in capillary gas and liquid chromatography, electrophoresis, absorbance spectroscopy, Raman spectroscopy etc. These micro-fluidic methods find applications biotechnologies, medical diagnostic, drug discovery environmental sciences. In the presented work we discuss some aspects of light guidance tubing made from silica glass or Teflon AF. The wide range constructions allows them to be advantageously specific applications. We have analyzed both theoretically...

10.1117/12.722497 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 2007-05-04

Extensive numerical simulations of FinFET structures have been carried out using commercial TCAD tools. A series plasma etching steps has simulated for different process conditions in order to evaluate the influence pressure, composition and powering on topography. Next, most important geometric parameters FinFETs varied electrical characteristics calculated sensitivity possible structure variability.

10.26636/jtit.2009.4.960 article EN cc-by Journal of Telecommunications and Information Technology 2009-12-30
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