In a recently published paper, suggestions have been contained concerning close relations existing between the position of inflection point on capacitance-voltage, C(VG), characteristic metal-oxide-semiconductor (MOS) structure and flat-band voltage this structure. article, systematic, quantitative analysis problem is presented. The VINFL voltage, VFB, MOS conducted for ideal non-ideal (but with negligible density interface states, Dit) structures silicon carbide substrates. It found that,...

Formulae are derived allowing the analytic calculation of MOS structure quasi-equilibrium TVS current–voltage characteristics. It is assumed that mobile charges one polarity present in dielectric layer which held between two blocking electrodes. The voltage drop semiconductor electrode taken into account. Characteristics calculated using formulae shown to be good agreement with experimental A simplified method charge calculation, based on measurement current peak height described, and a...

2014 On a élaboré deux nouvelles méthodes de détermination du potentiel contact dans les structures MOS.On mis ces en pratique et valeurs 03A6MS obtenues par elles ainsi que celles d'autres auteurs s'accordent bien.Les sont simples plus faciles à appliquer généralement utilisées la 03A6MS.Abstract.2014 Two new techniques for potential difference determination in MOS have been developed.These were applied practice yielding values remaining close agreement with each other, and within the range...

This article completes the presentation of a model photoelectric phenomena taking place in metal–insulator–semiconductor (MIS) structures at low electric fields, which was introduced Ref. [H. M. Przewlocki, J. Appl. Phys. 78, 2550 (1995)]. A solution and analysis model’s equations is given for general case nonzero net current (J≠0) external circuit. allows calculation photocurrent–voltage characteristics MIS illuminated with ultraviolet radiation different wavelengths λ. To verify these...

In this article, we report the results of a study effects high-temperature stress annealing in nitrogen on index refraction SiO2 layers metal/oxide/semiconductor (MOS) devices. study, have experimentally characterized dependence mechanical Si–SiO2 system oxidation and conditions correlated such properties with processing oxide thickness. We consider contributions thermal-relaxation nitrogen-incorporation processes determining changes time. This description is consistent other studies carried...

In this article, we report the results of a study effects high-temperature stress annealing in nitrogen on electrical properties metal/oxide/semiconductor devices. study, have experimentally characterized dependence reduced effective contact-potential difference, oxide charge (Neff), and midgap interface trap density (Dit) conditions nitrogen. We correlated such with index refraction thickness companion article. consider contributions thermal-relaxation nitrogen-incorporation processes...

Energy-band model offsets, trap density distributions and gate leakage characteristics of MOS capacitors with PECVD thermal oxides on 3C-SiC 4H-SiC were compared. The difference in energy between the polytypes confirmed lesser polytype vulnerability to near-interface traps (NIT), which are alternatively found high 4H-SiC. It was also shown that quality obtained this experiment comparable oxide. Only a slight increase current observed due oxide inhomogeneity lower electric field interval...

Numerous photoelectric methods were used to determine parameters of metal-insulator-semiconductor (MIS) structures. A model phenomena taking place in MIS structures, at low electric fields the dielectric, was found be necessary explain results some experiments. Such a has been worked out and is presented for practically important case zero net current (J=0). Formulas are derived allowing calculation structure characteristics. These characteristics have also determined experimentally...

A new measurement technique of work function differences in MOS structures is described. Results obtained for the AlSiO2Si system are presented and discussed comparison with results by other authors. [Russian Text Ignored].

This article gives a quantitative analysis of electron photoemission yield from N+-type and P+-type substrates MOS structures. Based on this analysis, method is presented to estimate both the scattering length, ℓ, electrons in image force potential well photoelectron escape depth, xesc, semiconductor substrate. was used length depth Al-SiO2-Si (N+-type P+-type) It found that for substrate structures has dominating influence while subsurface regions photoemitter play important roles. equal ℓ...

Charge trapping in the insulator of a metal-oxide-semiconductor (MOS) structure strongly influences photocurrents resulting from electron photoinjection gate, or semiconductor electrode, into this insulator. This influence may be used to determine trapped charge distributions (profiles) dielectric layers MOS structures. In paper, several profiles are considered, and these charges on photoelectric characteristics is discussed. Detailed solutions derived for uniform, step, delta, rectangular,...

Distributions of the gate-dielectric EBG(x, y) and semiconductor-dielectric EBS(x, barrier height values have been determined using photoelectric measurement method. Modified Powell-Berglund method was used to measure values. Modification this consisted in a focused UV light beam small diameter d =0.3 mm. It found that distribution has characteristic dome-like shape which corresponds with independently effective contact potential difference fMS(x, distribution. On other hand, is random...

Equilibrium and nonequilibrium behavior of mobile charges in dielectric layers MOS structures have been investigated. A variety has studied using the TVS method, a newly developed technique quasi‐continuous registration C‐V characteristic shifts (ACVS method). Basic models are considered, an image force trapping model is proposed to interpret measurement results.

Cubic silicon carbide (3C-SiC) is a particularly promising material for high and medium power MOS transistors, because it offers higher inversion channel mobility than other SiC polytypes. Optimizing the field effect devices made of 3C-SiC choosing appropriate materials to be incorporated in device requires knowledge investigated structure band diagram. Hence, first part this work devoted determination diagrams various structures on substrates. Since trap densities distributions are still...

The photoelectric techniques are often used for the measurements of metal oxide semiconductor (MOS) structure parameters. These methods, which consist in illuminating MOS with a semitransparent gate by UV light beam, competitive typical electric measurements. results obtained different methods are, many cases, more accurate and reproducible than other flat-band voltage VFB is an important parameter any since its value influences threshold VT , decides example about power consumption...

In this article a universal system for photoelectric measurements (USPM) is described, with several subsystems allowing comprehensive characterization of various semiconductor devices, primarily MOS (metal–oxide–semiconductor) structures. structures are fundamental components all modern integrated circuits and the key parameters these can be determined by electrical techniques. particular, investigations very important useful in micro- nanoelectronic devices since they offer accurate...

A multifunctional system for the photoelectric measurement of semiconductor structures (MSPM) is presented. The enables very accurate photocurrent measurements to be taken at levels as low 10 fA. Measured can biased by sequences DC voltages and stimulated light beams predefined wavelengths powers. software controls all actions allowing flexibility in retrieving data stored related databases.