A5067605763- Thin-Film Transistor Technologies
- Advanced Memory and Neural Computing
- Electrocatalysts for Energy Conversion
- Fuel Cells and Related Materials
- ZnO doping and properties
- Semiconductor materials and devices
- Advanced battery technologies research
- Conducting polymers and applications
- Ga2O3 and related materials
- Electrochemical Analysis and Applications
- CCD and CMOS Imaging Sensors
- Neuroscience and Neural Engineering
- Hybrid Renewable Energy Systems
- Advanced Battery Materials and Technologies
- Ferroelectric and Negative Capacitance Devices
- Transition Metal Oxide Nanomaterials
- Electronic and Structural Properties of Oxides
- Neural Networks and Applications
- Advanced Battery Technologies Research
- Advancements in Battery Materials
- Analog and Mixed-Signal Circuit Design
Korea Advanced Institute of Science and Technology
2017-2023
Government of the Republic of Korea
2016-2020
Kyung Hee University
2014-2017
Yong In University
2016
Iron- and nitrogen-doped carbon (Fe–N–C) materials have been suggested as the most promising replacement for Pt-based catalysts in oxygen reduction reaction (ORR) owing to FeN4 active moiety. Based on relationship between binding energy catalytic activity, Fe–N–C has a very strong energy; hence, hard desorb final intermediate of *OH. Herein, we provide an effective method tuning moiety using phosphine-gas treatment Fe–N–C. Combined analyses experimental computational results reveal that...
Corrosion of carbon support is one the most crucial causes degradation polymer electrolyte membrane fuel cells (PEMFCs) utilizing carbon-supported platinum nanoparticles (Pt/C) as a catalyst. To mitigate corrosion, Pt alloyed with iridium (Ir), which catalytically active for oxygen evolution reaction (OER), various compositions PtxIry. The PtxIry alloy catalysts (PtxIry/C) show slightly lower initial activity reduction (ORR) than Pt/C. However, ORR activities PtxIry/C increase repeating...
Synaptic plasticity can be mimicked by electronic synaptic devices. By using ferroelectric thin films as gate insulator for thin-film transistors (TFT), channel conductance defined the plasticity, and gradually modulated variations in amounts of aligned dipoles. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]-poly(methyl methacrylate) (PMMA) blended are chosen their switching kinetics investigated Kolmogorov-Avrami-Ishibashi model. The time polarization is sensitively influenced...
HER-active Cu<sub>3</sub>P/N-doped carbon is inspired by the role of PAN in Li-ion batteries, and non-toxic one step synthesis includes phosphorization Cu cyclization PAN. The synergistic effects mechanical integrity relate to N-doped carbon.
Al-doped ZnO (AZO) thin films were prepared by atomic layer deposition, in order to optimize their characteristics as active channel materials for oxide thin-film transistors (TFTs). The crystalline phases of the AZO deposited at 100 °C appeared mainly (100) planes, and surface morphologies homogeneous smooth. electrical conductivities with varying Al concentrations measured in-situ a temperature sweep from 50 250 °C. From conductivities, activation energies carrier transport each...
Developing active and stable electrocatalysts for the oxygen evolution reaction (OER) is essential to enhance efficiency of water splitting. Herein, we report a nickel/tungsten carbide (Ni/WC) composite catalyst in which WC nanoparticles are embedded underneath thin Ni layers as highly OER an alkaline electrolyte. The layer has modulated electronic structure stemming from interaction with WC. Ni/WC exhibits excellent activity durability 1 M KOH solution. turnover frequency (0.58 s–1)...
In this work, we proposed new type of synapse device with thin-film transistor (TFT) configuration using an In–Ga–Zn–O (IGZO) as active channel and a poly(4-vinylphenol)–sodium β-alumina (PVP–SBA) gate insulator for emulating brain-like functions.
Nonvolatile resistive-switching memory (RSM) devices using Al-doped ZnO (AZO) thin films were proposed and fabricated for large-area electronic applications. The AZO was chosen because of its property controllability via modulating the incorporated Al amounts ability to be integrated with oxide transistor driving circuits. prepared by atomic layer deposition varied 5, 10, 20 at. %, RSM a stacked structure Al/AZO (20 nm)/Mo on SiO2/Si substrate. current ratio between low-resistance...
A specified mid-annealing process, which is a thermal treatment in oxygen ambient right after an active layer deposition, was proposed for obtaining sufficiently wide process window the atomic deposition order to realize high performance Al-doped ZnO (AZO) thin-film transistors (TFTs). While crystalline phases of AZO thin films were not changed electrical conductivities experienced drastic changes owing significant reduction vacancies during process. The decrease conductivity more markedly...
We proposed a methodology for controlling the threshold voltage by adjusting position of Al dopant layer within an Al-doped-ZnO active channel thin film transistor.
A multilevel resistive-change memory device with thin-film transistor (TFT) structure is proposed, in which both functions of and nonvolatile can be performed. Al-doped ZnO was employed for the active channel TFT as well material device. Multilevel operations could realized by controlling number conducting filaments within channel. Sound characteristics were demonstrated. The programmed current ratios three-level states 1:3.8:25. As results, long-time stability (10 <sup...
Abstract We investigated the effects of distance between incorporated Al layers on characteristics thin-film transistors (TFTs) using Al-doped ZnO (AZO) as active channels. The intervals were controlled by designing sequences cycles during atomic-layer deposition. Two configurations designed “scatter” or “focus”, in which dispersed to bottom and top sides concentrated center region. Electrical conductivities “focus” films observed be different. While could work dopants, a too-close interval...
A mid-annealing process was proposed to control both parameters of the carrier concentration and crystal orientations for atomic-layer deposited Al-doped ZnO (AZO) thin films. It defined as an additional thermal treatment in oxygen ambient prepared AZO films right after channel area patterning during TFT fabrication procedures. confirmed that electrical conductivity showed drastic changes at 150 200 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
We proposed a synapse thin film transistors with bottom-gate structure composed of an In-Ga-Zn-O (IGZO) active channel and poly 4(vinylphenol)-sodium beta-alumina (PVP-SBA) gate insulator. The physical electrical properties the PVP-SBA were demonstrated as electrolytic insulator for TFTs. Paired-pulse facilitation (PPF), short-term memory (STM), long-term (LTM) operations successfully confirmed in fabricated TFTs, which output drain currents effectively modulated various input pulse...
We investigated the effects of controlling relative positions Al dopant layers on device characteristics thin-film transistors using Al-doped ZnO (AZO) active channels for first time. The position control was accomplished by cycle designs atomic-layer deposition process AZO channels. When layer positioned at bottom sides channel, turn-on operations were performed smaller negative gate voltages in their transfer characteristics. Other properties including positive bias stability did not show...
Polymer electrolyte membrane electrolytic cells (PEMECs) is one of appropriate energy storage systems connected with renewable due to high drive current and endurance under road fluctuation. In water electrolysis, oxygen evolution reaction (OER) occurs acidic potential. So, the large amount precious metal catalyst needed for performance stability. Introduction supporting materials could reduce without degradation. Titanium oxide (TiO 2 ) few which shows good stability potential conditions....
We proposed a synapse thin film transistors with top-gate structure composed of an In-Ga-Zn-O (IGZO) active channel and Li-incorporated polypropylene carbonate (Li:PPC) gate insulator. The physical electrical properties the PPC were investigated for use as electrolytic insulator TFTs. Synaptic behaviors including paired-pulse facilitation (PPF) operations successfully confirmed in fabricated TFTs, which output drain currents effectively modulated various input pulse conditions owing to...
Polymer Exchange Membrane water electrolysis (PEMWE) is promising energy converting device, which one of the main component for hydrogen society. However, there are still some issues about prices and durability. Especially, in anode electrode oxygen evolution reaction (OER) occurs, a large amounts precious metal catalyst required to show quite good efficiency. Besides, durability occurs side due their high voltage acidic conditions. To solve issues, supporters have been proposed. According...
Polymer electrolyte membrane water electrolysis (PEMWE) is an energy conversion device for producing green hydrogen, which one of the key elements moving toward a hydrogen society. However, there are two obstacles to commercialization PEMWE, cost and durability. In particular, large amount noble metal catalyst such as ruthenium (Ru) or iridium (Ir) required oxygen evolution reaction (OER) occurring at anode electrode. To reduce usage catalysts, carbon supports could be introduced. due harsh...
Iron- and nitrogen-doped carbon (Fe-N-C) materials have been suggested as the most promising replacement for Pt-based catalysts in oxygen reduction reaction (ORR) owing to FeN 4 active moiety. Based on relationship between binding energy catalytic activity, Fe-N-C has very strong so that hard desorb final intermediate of *OH. Herein, we provide first time an effective method tuning moiety using a phosphine gas-phase treatment Fe-N-C. Combined analyses experimental computational results...