A5055063198- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Ga2O3 and related materials
- Mobile Ad Hoc Networks
- ZnO doping and properties
- Mental Health via Writing
- Network Security and Intrusion Detection
- Opportunistic and Delay-Tolerant Networks
- Misinformation and Its Impacts
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Quantum Structures and Devices
- Electronic and Structural Properties of Oxides
- Distributed systems and fault tolerance
- Energy Efficient Wireless Sensor Networks
- Mobile Agent-Based Network Management
- Social Media in Health Education
- Semiconductor Lasers and Optical Devices
- Gas Sensing Nanomaterials and Sensors
- Electrostatic Discharge in Electronics
- Thin-Film Transistor Technologies
- Advanced Memory and Neural Computing
- Optical Network Technologies
- Health and Well-being Studies
- Security in Wireless Sensor Networks
Indian Institute of Science Bangalore
1970-2025
Indiana University Bloomington
2024
Max Planck Institute for Solid State Research
1989
We have directly measured the real-space transfer times associated with \ensuremath{\Gamma}\ensuremath{\rightarrow}X intervalley scattering in type-II GaAs/AlAs superlattices by femtosecond optical pump and probe spectroscopy. domonstrate that rate for this unique process connecting electron states different slabs of superlattice is related to spatial overlap electronic envelope wave functions satellite minima.
We report on the deposition of Ga2O3 III-nitride epi-layers using microwave irradiation technique. also demonstration a device: visible-blind, deep-UV detector, with GaN-based heterostructure as substrate. The film deposited in solution medium, at <200 °C, metalorganic precursor, was nanocrystalline. XRD confirms that as-deposited film, when annealed high temperature, turns to polycrystalline β−Ga2O3. SEM shows be uniform, surface roughness 4–5 nm, revealed by AFM. Interdigitated...
We report on the study of electron transport and band offset across β-Ga2O3/4H-SiC N–n isotype heterojunction. N-type β-Ga2O3 thickness 2.7 μm was grown using low-pressure chemical vapor deposition germanium (Ge) as dopant an n-type 4H-SiC substrate. The epilayer having (−201) orientation verified through XRD. Temperature-dependent I–V C–V measurements were performed (50–300 K) to investigate properties First, lateral diodes fabricated β-Ga2O3, from C–V, n-doping estimated be 2.3×1017cm−3 in...
This work reports the very first systematic study on physics of avalanche instability and SOA concerns in AlGaN/GaN HEMT using sub-μs pulse characterization, post stress degradation analysis, well calibrated TCAD simulations failure analysis by SEM TEM. Impact electrical, as thermal effects boundary are investigated. Trap assisted cumulative nature is studied detail, which was discovered to be root cause for HEMTs. Post SEM/TEM reveal distinct modes presence absence carrier trapping.
In this article, we report on the electrical performance of AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using gold (Au)-free process, after being transferred onto flexible Kapton tape. The transfer process followed in work can be easily scaled-up to wafer level and involves a relatively simple epoxy bonding thin device layer substrate. Electrical characteristics HEMT indicate 5%–10% higher ON-current when bent with radius curvature 2.1 cm (at low drain bias voltages),...
We report a novel Sc/Al/Ni/Au metal scheme for Ohmic contacts to InAlN/GaN HEMT structures on silicon. A contact resistance of 0.39 Ω-mm with low surface roughness 20± 3 nm the annealed has been achieved using this scheme. The microstructure region under revealed formation ~60 deep ScGaN inclusions in GaN channel layer. thin (~3-5 nm) non-uniform layer ScInAlN is observed top InAlN barrier. Field-emission found be dominant conduction mechanism. Polarization mismatch arising due structural...
In this report, the precise alignment of catalyst free InAs nanowires (NWs) on pre-patterned Au microelectrodes by dielectrophoresis (DEP) technique for gas sensing applications is presented. The NWs have been grown Si (111) substrate molecular beam epitaxy (MBE) technique. effect dispersing solvents, electrode geometries and gaps, magnitude, frequency duration applied voltage etc, has studied aligning DEP Current–voltage (I–V) measurements aligned show linear behavior at room temperature...
In a mobile environment the physical movement of hosts causes changes in topology network with time. Therefore, direct execution existing distributed algorithms renders them inefficient. Distributed are therefore modified by assigning proxies, which static network, to each hosts. Proxies have been used at level d(d ≥ 1) logical hierarchy location servers. A mutual exclusion algorithm has redesigned, and results simulations original versions presented. General purpose procedures developed can...
<sec> <title>BACKGROUND</title> Data from the social media platform X (formerly Twitter) can provide insights into types of language that are used when discussing drug use. In past research using latent Dirichlet allocation (LDA), we found tweets containing “street names” prescription drugs were difficult to classify due similarity other colloquialisms and lack clarity over how terms used. Conversely, “brand name” references more amenable machine-driven categorization. </sec>...
Background Data from the social media platform X (formerly Twitter) can provide insights into types of language that are used when discussing drug use. In past research using latent Dirichlet allocation (LDA), we found tweets containing “street names” prescription drugs were difficult to classify due similarity other colloquialisms and lack clarity over how terms used. Conversely, “brand name” references more amenable machine-driven categorization. Objective This study sought use...
The paper discusses the shortcomings of current day networks in transporting exponentially increasing data traffic. Bursty and unpredictable characteristics traffic would need thorough overhauling existing networks. An all optical network architecture is envisaged for future with electrical elements only access feeds. Various issues, techniques are discussed. futuristic foreseen as an optical, centric one mesh-ring-mesh topology, implementing QoS distributed intelligence management.
Atlas silvaco simulation has been performed to explore the effectiveness of buried channel architecture on AlGaN/GaN HEMTs for normally-off operation. The operation is achieved by adding a p-n junction in GaN buffer. Thicknesses and doping concentration p-type n-type region are optimized formation conduction away from gate oxide-GaN interface, thereby reducing interface scattering enhancing field effect mobility. Better breakdown voltage also demonstrated device owing presence depletion...
International Journal of Computer Sciences and Engineering (A UGC Approved indexed with DOI, ICI Approved, DPI Digital Library) is one the leading growing open access, peer-reviewed, monthly, scientific research journal for scientists, engineers, scholars, academicians, which gains a foothold in Asia opens to world, aims publish original, theoretical practical advances Science,Information Technology, (Software, Mechanical, Civil, Electronics & Electrical), all interdisciplinary streams...
This paper deals with a novel method of pattern recognition, in which recognition is effected by sequential sweeping along preferred directions. The chosen set measurement directions (x 1, x 2, … n) are first ordered according to preference and then the axes swept sequentially that order. An algorithm proposed gives code representation for clusters an n-dimensional space. Two models recognizer. It shown capable 100% learning patterns, under assumption no two patterns belonging different...
The talk will describe the defect-to-device performance correlations for optoelectronic and power devices on hetero-epitaxially grown III-nitride epi-layers silicon sapphire. While UV detectors electronic might seem far apart, we see similarities between defect origins of dark current in former leakage currents latter. Both have their crystal growth. first part work focuses correlation parameters vertical deep-ultraviolet photodetectors c-plane sapphire density extended defects vis-à-vis...
Artificial Synapse In article number 2000254, Neha Mohta and co-workers report a synaptic transistor based on 2D-MoS2 semiconducting channel high-k Ta2O5 as an underlining back-gate dielectric. The use of allows the devices to be operated at much lower operating gate voltage with energy consumption 5 nJ per spike, which makes them potential candidate for realizing low power energy-efficient neuromorphic applications.