A5025627104- 3D IC and TSV technologies
- Electronic Packaging and Soldering Technologies
- Semiconductor Lasers and Optical Devices
- Thin-Film Transistor Technologies
- Organic Light-Emitting Diodes Research
- Semiconductor materials and devices
- Additive Manufacturing and 3D Printing Technologies
- Color Science and Applications
- CCD and CMOS Imaging Sensors
- Advancements in Photolithography Techniques
- Advanced Optical Imaging Technologies
- Image and Video Quality Assessment
National Cheng Kung University
2024
Taiwan Semiconductor Manufacturing Company (Taiwan)
2013
Taiwan Semiconductor Manufacturing Company (United States)
2012
This work proposes an emission (EM) gate driver that is based on p-type low-temperature poly-crystalline silicon thin-film transistors (LTPS TFTs) with the implementation of lightly doped drain (LDD) to achieve flat off current. The long-tail phenomenon associated EM signal caused by a high threshold voltage (VTH) and (VTH variation in LTPS TFTs improved enhancing driving capability pull-down TFT. pulse width adjustable, has stabilizing structure reduce deviation leakage current (...
The density of through-silicon-via (TSV) on CMOS chip is limited by TSV dimension and keep-out zone (KOZ). A high aspect ratio Cu process, 2 μm × 30 μm, demonstrated 28nm baseline with good electrical performance low cost. By implementing TSV, the Si stress in vicinity caused thermal expansion able to be relieved. It is, therefore, shown that relaxation correlated minimized achievement excellent 3D-IC yield embedded device characteristics are key milestones promising manufacturability...
To achieve ultra small form factor package solution, an ultra-thin (50μm) Si interposer utilizing through-silicon-via (TSV) technology has been developed. Challenges associated with handling thin wafer and maintaining co-planarity have overcome to stack dies (200 μm) on interposer. Improved electrical performance the advantages of this innovative are highlighted in paper. Warpage behavior is investigated simulation experiments ensure reliability robustness stack. Reduction thickness realized...
This paper presents a bidirectional gate driver circuit based on low‐temperature polycrystalline oxide thin‐film transistors for low‐frame‐rate AMOLED display. Simulation results indicate the falling and rising times of output waveform are all below 3.48 μs 0.56 with threshold voltage variations TFTs, ensuring stability proposed circuit. The waveforms also generated successfully frame rate 1 Hz display panel have no fluctuation in consecutive frames. Therefore, is suitable
A novel versatile and highly integrated display controller for consumer television sets is described. The device can be easily configured to support the three major color standards existing today. digital designed channel tuning video audio controls. Other peripheral functions, like keypad scanning, remote infrared sensing, LED, on-screen display, are also incorporated onto same chip. superintegration design methodology, which significantly reduced cycle time, was used.< <ETX...