A5101325322- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Financial Markets and Investment Strategies
- Market Dynamics and Volatility
- Global Energy and Sustainability Research
- Microwave and Dielectric Measurement Techniques
- Climate Change Policy and Economics
- Capital Investment and Risk Analysis
- Complex Systems and Time Series Analysis
- Energy, Environment, Economic Growth
- High voltage insulation and dielectric phenomena
- Innovation Policy and R&D
- Advanced Computational Techniques and Applications
- Housing Market and Economics
- Financial Risk and Volatility Modeling
- Advanced Algorithms and Applications
- Stock Market Forecasting Methods
- Material Properties and Processing
Hunan University
2024
Macau University of Science and Technology
2018-2021
Guangdong University of Foreign Studies
2018
Economic policy uncertainty (EPU) has important implications for crude oil market. To explore the implications, this paper investigates impact of EPU on return volatility and which index most forecasting power in end, we employ GARCH-MIDAS model can incorporate lower frequency variable with higher effectively. We find that a positive significant volatility, but effect is short-lived decay period about one year. Particularly, our results show US best over long-term, whereas China performance...
In this article, an analytical I–V model for calculating subthreshold current of SiC MOSFETs is presented. This starts with planar and utilizes the one-dimensional Poisson's equation to derive expression surface potential. Subsequently, it employs as a foundation calculations. Then extended DMOSFETs based on fact that channel formation mechanism similar MOSFETs. Comparative analysis our calculations two-dimensional numerical simulation software reveals exhibits high degree agreement in case...
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ABSTRACT SiC double gate (DG) junction field effect transistor (JFET) is promising for low‐noise and high‐temperature electronics. Existing studies indicate that JFETs can be considered a special case of MOSFETs when the oxide layer thickness approaches zero. In this article, we exploited structural similarity between DG MOSFETs. By obtaining 2D Poisson's equation deriving limits, developed model calculating channel current in subthreshold region. The derived from device physics, requiring...
This paper focuses on investors’ different behavioral biases in China’s segmented stock markets and investigates the correlation between average holding periods, returns disposition effect 2010 2014. The results show that is prevalent A-share market but very weak Growth Enterprise there a lack of evidence to support existence B-share market. study supports view experience sophistication can partly help reduce markets. It also indicates investors A-shares prefer hold stocks with larger...
This paper examines whether the Shanghai-Hong Kong Stock Connect program drives market comovement between Shanghai and Hong Kong. We distinguish financial liberalization induced from that by other factors through comparing time-varying correlations of with those Shenzhen-Hong Our results show, if we ignore period crash, correlation does not significantly increase after launch program. Furthermore, inconsistent theoretical prediction, find financially non-liberalized Shenzhen much more than...