A5102021854- Radio Frequency Integrated Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- Microwave Engineering and Waveguides
- Superconducting and THz Device Technology
- Silicon Carbide Semiconductor Technologies
- Photonic and Optical Devices
- Electromagnetic Compatibility and Noise Suppression
- Silicon and Solar Cell Technologies
- Advanced Machining and Optimization Techniques
- Electrodeposition and Electroless Coatings
- Astronomical Observations and Instrumentation
- Gyrotron and Vacuum Electronics Research
- Analog and Mixed-Signal Circuit Design
- Induction Heating and Inverter Technology
- Nanowire Synthesis and Applications
- Millimeter-Wave Propagation and Modeling
- GaN-based semiconductor devices and materials
- Advanced Photonic Communication Systems
- Microwave and Dielectric Measurement Techniques
- Semiconductor Lasers and Optical Devices
- Advanced MEMS and NEMS Technologies
- Thin-Film Transistor Technologies
- Nanomaterials and Printing Technologies
- Advanced Antenna and Metasurface Technologies
- Astronomy and Astrophysical Research
University of Calcutta
1976-2002
A theoretical study of the relationship between electrical series resistance (R/sub s/) an IMPATT diode and threshold current for oscillation corresponding frequency has been carried out, considering inequality ionization rates drift velocities two types charge carriers in silicon. The obtained experimentally by measuring with X-band silicon SDR device embedded a resonant-cap cavity. results indicate that method is suitable one determining R/sub s/, they agree manufacturer's data. would be...
The Authors through this paper have investigated and performed an in-depth study of the Analog performances Underlapped Dual Gate (U-DG) Si/SiGe Metal Oxide Semiconductor-High Electron Mobility Transistor (MOS-HEMT) device consisting HfO2 as a high-k dielectric material. authors compared aforementioned by varying central Si buffer length sandwiched in between transcending Silicon Germanium (SiGe) layers mole fraction SiGe layer. focuses on effect conduction band energy profile along with...
The role of electron and hole saturation currents in controlling the millimeter-wave (mm-wave) properties silicon GaAs double drift region (DDR) high-efficiency (low-high-low type) IMPATTs is investigated through computer simulation. results indicate that with increasing current (due to electrons/holes), device negative conductance as well resistance decrease, while quality factor increases. It also observed a 15 GHz upward shift optimum frequency from normal oscillation around 100 possible...
Pulsed-mode high-power generation in silicon double drift region (DDR) IMPATT devices is briefly reviewed, and current work presented on the structural parameter dependence of pulsed IMPATTs designed for operation around 94 GHz at a density .
A detailed experimental investigation has been made on the electronic tuning of resonant-cap IMPATT oscillators at X-band. The is extended to include mechanical properties, i.e. studies dependence properties diameter and cap height. study gives an interesting insight regarding behaviour for various ranges d.c. bias current. From these optimum size cavity realizing maximum power output tunability a given diode can be obtained, which would useful in design oscillators.
The high-frequency noise properties of a Read diode, whose current multiplication factor in the avalanche zone can be controlled and is finite, has been analyzed. analysis indicates that open-circuit voltage figure diode are reduced with lowering factor. It also found exhibits finite peak at frequency for but large values M which, however, disappears lower M(≤100).
Abstract Experimental studies have been carried out to investigate the improvement of performance IMPATT oscillators in X-band (8.0-12.0 GHz) when device is embedded modified resonant-cap cavities. The cap cavities designed by incorporating circumferential slots on disc structure. It has found that a significant microwave power output and electronic tunability can be realized with appropriately sized resonant-cap. optimally oscillator almost doubled bandwidth tuning improved nearly fourfold...
A methodical experimentation for electroless deposition of Gold metal on semiconductor substrate like Silicon is presented. This method involves minimum loss and thick layers can be easily deposited the using photoresist as a mask. The rate coating in range 7.0 micrometer to 10.0 per hour without any deterioration which makes present quite attractive heatsink formation.
Solid state microwave oscillators are becoming increasingly important in microwaves, millimeter-waves and submillimeter wave frequency ranges. Previously, traditional waveguide based using IMPATTs have been popular. The paper deals with the design, development characterization of a microstrip IMPATT oscillator Ku-band. Since large signal behaviour usually is not well understood circuits electromagnetically complex, it difficult to characterize accurately circuit performance configuration....
A computer aided numerical iteration technique is presented which would be suitable for optimum design and realisation of Impatt amplifiers with circular resonant cap cavities. The dependence the centre frequency amplifier on device circuit impedance placed at cavity has been studied. real part seen edge by an incoming signal studied along geometrical parameters using a process through solution related electromagnetic field equations. radius, height, post radius thickness also
A detailed study of the d. c. characteristics Si, Ge and GaAs p-i-n avalanche diodes is presented by using a non-iterative method which does not require usual iterative process. The involves numerical solution an equation derived from Poisson continuity equations. computation started minimum field point in space charge region realistic veriation ionization rate carriers. It observed that effect on electric profile increases with increase current density decreases decrease depletion layer...
An experimental study for electrodeposition of gold metal on the silicon wafer formation an integral heat sink IMPATT diodes is presented in this paper. The rate deposition 5.0 microns/hr to 8.0 with optimized plating parameters.
Dependance of IMPTT oscillator performance on threshold current for oscillation has been studied. It found that optimum the in terms maximum power output and safe operation can be obtained at a particular given device. This corresponds to device-circuit interaction which circuit determined frequency is very close design Further, nearly half typical operating