A5104317114- GaN-based semiconductor devices and materials
- Radio Frequency Integrated Circuit Design
- Semiconductor Quantum Structures and Devices
- Acoustic Wave Resonator Technologies
- Tactile and Sensory Interactions
- Education and Learning Interventions
- Human Motion and Animation
- Advanced Fiber Optic Sensors
- Semiconductor materials and devices
- Artificial Intelligence in Games
- Advancements in Semiconductor Devices and Circuit Design
- Educational Games and Gamification
- Video Analysis and Summarization
- ZnO doping and properties
- Silicon Carbide Semiconductor Technologies
- Child Development and Digital Technology
- Ga2O3 and related materials
- AI and Multimedia in Education
- Surface Roughness and Optical Measurements
- Innovative Human-Technology Interaction
- Advanced Measurement and Metrology Techniques
Xi'an Academy of Fine Arts
2024
South China Normal University
2023-2024
Neusoft (China)
2024
Chengdu Neusoft University
2024
Chengdu University
2024
Institute of Semiconductors
2024
Chosun University
2006
In this study, we investigate the enhancement of effective transconductance and gain linearity in submicrometer gate AlGaN-barrier-based transistors utilizing ScAlN/GaN coupling-channel structures. A novel asymmetric design, incorporating an AlGaN cap on HEMT, is proposed. This configuration demonstrates a flat profile significantly reduced derivative, thereby improving GaN-based transistors. For with length 0.5 μm, both current cut-off frequency power are measured at 53.52 GHz 72.98 GHz,...
This article demonstrates the effect of reverse gradient barrier layer and floating gate structure on DC RF performance GaN-based HEMTs. In terms power characteristics, using gate, GaN-HEMTs with Lg 240 nm S-D spacing 8.4 μm demonstrated maximum drain current peak transconductance are increased by 70 % 15 respectively, linearity GaN based HEMT is greatly improved. Meanwhile, layer, leakage significantly reduced nearly 1 to 5 orders magnitude, it proved that negative polarization has a...
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This paper presents a GaN-based High Electron Mobility Transistor (HEMT) with connected dual-channel structure (CDC-HEMT). Specifically, the Al0.05Ga0.95N layer beneath first channel enables second to be in non-conducting state while simultaneously increasing number of electrons available conducting state. In contrast conventional normally-off devices, CDC-HEMT exhibits excellent DC performance, saturation current density increase from 0.67 A/mm 1.52 at V <sub...
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A B S T R C TThis article demonstrates the effect of reverse gradient barrier layer and floating gate structure on DC RF performance GaN-based HEMTs. In terms power characteristics, using gate, GaN-HEMTs with Lg 240nm S-D spacing 8.4 μm demonstrated maximum drain current peak transconductance are increased by 70% 15% respectively, range was larger. Meanwhile, layer, leakage is significantly reduced nearly 1 to 5 orders magnitude, it proved that negative polarization has a certain increasing...
In this paper, we used the polarization interferometer for surface measurements with stabilized module polarizing beamsplitters, waveplates, etc. So get four shifted interference patterns (0/spl deg/, 90/spl 180/spl 270/spl deg/). The He-Ne laser was measurement. profile from pattern by using Twyman-Green has been done mathcad and FFT method.