A5048925773- Silicon Carbide Semiconductor Technologies
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Aluminum Alloys Composites Properties
- Cell Adhesion Molecules Research
- Advanced Surface Polishing Techniques
- Advanced ceramic materials synthesis
- Semiconductor materials and devices
Zhejiang University of Technology
2023-2024
Zhejiang University
2023-2024
Nitrogen doped n-type SiC substrates are extensively employed for high-power devices thanks to its excellent physical properties. However, the growth of single crystals via vapor transport method...
Effective stress! By comparing the calculation and experimental results, a possible value of effective stress to evaluate effect nitrogen dopant on dislocation density is proposed.
The basal plane slip model in 4H-SiC was developed to investigate the effects of off-axis angles on total resolved shear stress. results showed that TRSS changed from 6-fold 4-fold symmetry with increasing angles.
Numerical studies involving elastic–plastic behaviors of σ ϕϕ , which causes SiC crystal fractures, were developed to investigate the fracture mechanism in 4H-SiC, indicating that plastic deformations caused by prismatic slips increase .
Physical vapor transport is the dominant method for growing 200 mm SiC crystals, and crystals produced by this still have dislocations, which affect performance of device. In study, finite element analysis crystal growth has been conducted to investigate influencing parameters on dislocations. The calculations are based model multiple resistance heating proposed in our previous work. transient heat transfer process calculated. Then dynamic mesh technique was employed consider shape evolution...