A5036422149- Solidification and crystal growth phenomena
- Silicon and Solar Cell Technologies
- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- Coal Properties and Utilization
- Silicon Carbide Semiconductor Technologies
- Molecular Sensors and Ion Detection
- Rock Mechanics and Modeling
- Geoscience and Mining Technology
- Fluid Dynamics and Thin Films
- Thin-Film Transistor Technologies
- Sulfur Compounds in Biology
- Luminescence and Fluorescent Materials
- Advanced ceramic materials synthesis
- Aluminum Alloys Composites Properties
- Advanced Surface Polishing Techniques
- Semiconductor materials and interfaces
- Thermoregulation and physiological responses
- Combustion and Detonation Processes
- Coal and Its By-products
- Advanced biosensing and bioanalysis techniques
- GaN-based semiconductor devices and materials
- Advanced Sensor and Control Systems
- Crystallography and molecular interactions
- Advanced Algorithms and Applications
Chongqing University
2025
Henan Polytechnic University
2015-2024
Zhejiang University
2011-2024
Liaoning Technical University
2024
State Forestry and Grassland Administration
2023
North University of China
2023
Henan University
2022
Changchun University of Science and Technology
2021
Beijing Research Institute of Automation for Machinery Industry (China)
2017-2020
Kyushu University
2017-2020
Unique high-capacity MnO2/porous graphitic carbon (MnO2/PGC) composites were fabricated by a mild and efficient in situ precipitation approach using PGC derived from coal tar pitch as the carbonaceous precursor KMnO4 manganese source. MnO2/PGC with reasonable surface areas (190–229 m2 g–1) retain superior structure of interconnected nanopores crystallite contain evenly distributed MnO2 modified on skeleton PGC, which can not only provide sufficient active sites for lithium-ion storage but...
To optimize crystal growth rates, it is advisable to choose rotational speeds corresponding specific melt heights. In this study, rotating the at 20–30 rpm in a double-vortex pattern resulted higher average rate.
Abstract To improve the wettability of surfactants on bituminous coal and to explore its mechanism coal, taking Sandaogou as an example, a single factor experiment was carried out first. Through contact angle surface tension experiments, three with good were selected from among nine mixed in equal proportions two by determine optimal compounding method concentration. The experimental results show that nonionic anionic, zwitterionic, anionic zwitterionic can have synergistic effects...
Understanding the fluid flow behavior in crossed fractures is of great significance to through natural rock fracture system. To investigate linear and nonlinear regime transitions fractures, theoretical analyses numerical simulations were first performed identify factors that cause hydraulic pressure head loss. Then, their influence on onset further evaluated by performing dynamic computation different configurations. The parameter identification shows surface roughness, aperture, scale,...
Expanding the diameter and reducing defect density of 4H silicon carbide (4H-SiC) single crystals are key development trends primary challenges in preparation 4H-SiC single-crystal substrates. During...
Physical vapor transport (PVT) method has been widely employed for growing 200-mm 4H-SiC crystals. However, keeping a constant growth rate poses challenge, as the process occurs within semi-sealed...
In order to improve the safety management level of construction sites, prevent and reduce occurrence building accidents, this article uses deep learning methods study these unsafe behavior recognition detection techniques. The most typical hazardous is not wearing a helmet. However, on-site personnel often neglect wear helmets due various reasons. study, target algorithm applied monitor helmet-wearing. YOLOX selected as basic model improved by combining site environment helmet...
As coal mining continues to progress deeper levels, the temperature of and rock rise, causing spontaneous combustion disasters become increasingly prominent. This paper studies characteristics in a high environment before after seam mining. The results were as follows: 1) Before mining, under action constant ground temperature, deep continuously slowly released heat, higher was, more heat was released. 2) During air entered, samples initially maintained continuous slow release. With entry...
The generation and expansion of stacking faults (SFs) during the physical-vapor-transport (PVT) growth n-type 4H-SiC single-crystal boules are investigated by combining photochemical etching, transmission electron microscopy, microphotoluminescence, micro-Raman investigations. SFs with Si–C bilayer sequence (3,3) in Zhdanov's notation found near seed crystal 4H-SiC. Interestingly, we find that facet region boule is free (3,3). Most constrained nonfaceted Micro-Raman analysis indicates shear...
The basal plane slip model in 4H-SiC was developed to investigate the effects of off-axis angles on total resolved shear stress. results showed that TRSS changed from 6-fold 4-fold symmetry with increasing angles.
Tetracycline (TC) contamination in water has progressively exacerbated the environmental crisis. It is urgent to develop a feasible method solve this pollution water. However, polluted often contains oil. This paper reported glass fiber (FG)-assisted polyvinylidene fluoride (PVDF) hybrid membrane with dual functions: high TC degradation efficiency emulsion and oil-water separation. can meet catalytic of tetracycline complex was decorated by coating PVDF solution containing hydrophilic...
SiC crystal is an excellent substrate material for high power electronic devices and high-frequency devices. Being cost-effective defect-free are the two biggest challenges at present. For physical vapor transport (PVT) growth of a single crystal, powder used as source material, which determines cost quality crystal. In this paper, we propose new design in graphite blocks substituted non-sublimated powder. Temperature distribution powder, evolution investigated by using finite element...