A5013942799- Luminescence Properties of Advanced Materials
- 2D Materials and Applications
- Perovskite Materials and Applications
- Ferroelectric and Piezoelectric Materials
- MXene and MAX Phase Materials
- Multiferroics and related materials
- Photorefractive and Nonlinear Optics
- Optical properties and cooling technologies in crystalline materials
- Graphene research and applications
- Acoustic Wave Resonator Technologies
- Luminescence and Fluorescent Materials
- Advanced Memory and Neural Computing
- Silicon and Solar Cell Technologies
- Ferroelectric and Negative Capacitance Devices
- Silicon Nanostructures and Photoluminescence
- Advancements in Semiconductor Devices and Circuit Design
- Machine Learning and ELM
- Nonlinear Optical Materials Studies
- Photonic Crystals and Applications
- Advanced Fiber Optic Sensors
- Advanced Sensor and Energy Harvesting Materials
- Pigment Synthesis and Properties
- Advanced MEMS and NEMS Technologies
- Solid State Laser Technologies
- Semiconductor materials and interfaces
University of Electronic Science and Technology of China
2021-2025
Huzhou University
2021-2024
China Jiliang University
2019-2020
State Council of the People's Republic of China
2019-2020
Hangzhou Xixi hospital
2019-2020
General Hospital of Guangzhou Military Command
2018
IBM Research - Thomas J. Watson Research Center
1974
IBM (United States)
1971
When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, interfacial charge transfer results reversal of structure's spontaneous polarization. This phenomenon is known as sliding ferroelectricity and it markedly different from conventional ferroelectric switching mechanisms relying on ion displacement. Here, we present layer dependence new dimension to control ferroelectricity. By fabricating 3 R MoS
Ferroelectric materials have switchable electrical polarization that is appealing for high-density nonvolatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance such devices. We report a fatigue-free system based on sliding ferroelectricity bilayer 3R molybdenum disulfide (3R-MoS 2 ). The memory performance this device does not show wake-up effect at low cycles or substantial...
In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by external field, stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile electrically switchable feature have exhibited enormous potential controlling electronic optoelectronic leading to...
Sliding ferroelectricity associated with interlayer translation is an excellent candidate for ferroelectric device miniaturization. However, the weak polarization gives rise to poor performance of sliding transistors a low on/off ratio and narrow memory window, which restricts its practical application. To address issue, we propose facile strategy by regulating Schottky barrier in semiconductor based on γ-InSe, high large (106) wide window (4.5 V) was ultimately acquired. Additionally, can...
Rare earth sulfides are a promising group of semiconductor materials with intricate crystal structures and unique electronic configurations, which can be applied in the fields energy storage, environmental protection inorganic pigments. In recent years, development modulation tools, rare have gained attention more fields, such as thermoelectric materials, magnetic electrochemical detection. We need to better understand before we develop practical functional materials. this article, present...
Large decreases in the conductivity of arsenic-doped silicon have been observed during 500–970°C heat treatments. The rate change depends upon prior quenching from diffusion temperature to room temperature. These changes are reversed by higher-temperature relationship between electrically active arsenic, as calculated conductivity, and total arsenic is shown be consistent with a model substitutional atoms being nonionized when cluster or complex involving one more vacancies.
A novel multifunctional KNN-based ceramics with decent piezoelectricity and intriguing photoluminescence are achieved through simultaneous modulation of diffused phase transition behavior unit cell distortion via optimizing the Dy 3+ content.
There has been a surge of research interest in the promising lead-free potassium−sodium niobate (KNN)-based ceramics, applications which could be significantly promoted by improving thermal stability piezoelectricity. Besides, endowing KNN-based ceramics with photoluminescence property rare-earth-ion doping can make them more completive counterparts potential such as novel multifunctional sensing devices. Herein, ceramic material doped Eu was elaborately designed to simultaneously obtain...
Topological polar structures in ferroelectric thin films have become an emerging research field for exotic phenomena. Due to the prerequisite of intricate balance among intrinsic dipolar anisotropy, imposed electric and mechanical boundary, topological domains are predominantly formed within complex oxides. Here, combining microscopic polarization measurement via Piezoresponse Force Microscopy atomic displacement mapping Scanning Transmission Electron Microscopy, we report direct observation...
Phosphorus-, arsenic-, and boron-implanted junctions have been investigated with special emphasis on their annealing behavior of the junction-leakage currents. It is shown that a minimum about 900°C 30 min required for junction qualities equal to diffused ones. Hall-effect measurements implanted region show phosphorus 1000°C arsenic boron are restore carrier concentrations corresponding impurities, respectively. The relative importance surface area perimeter contribution leakage identified....
Aiming to accomplish synchronous optical temperature measurements in the first, second, and third biological windows, this work has carefully designed a novel ratiometric thermometer based on ZrO2:Er3+/Yb3+ nanocrystals synthesized by gel combustion method. Under 980 nm excitation, luminescence spectra consist of emissions centered at 531, 568, 660, 1528 from Er3+ ions as well located ∼1000 Yb3+ ions. The temperature-sensing behaviors were investigated basis valley-to-peak ratio (VPR)...
The exceptional enhancement and reversible manipulation of near-infrared luminescence has been developed in Nd doped ferroelectric nanocomposites using electric fields.
The sensing of temperature is closely related to human life. noncontact ratio measurement method has extensive applications in biochemical monitoring and industrial production. However, optical detection techniques based on fluorescence intensity (FIR) still face many challenges, such as laser thermal effects, accuracy, reversibility. In this article, the Yb3+/Er3+-codoped Bi4Ti3O12 nanocrystalline composite been developed for thermometer. introduction nanocrystals into glass matrix...
The emission properties of lanthanide ions have been extensively investigated for their interesting physical processes and enormous applications. Conventional strategies used to modify luminescence such as temperature, pressure, modifying components. However, the traditional methods are volatile irreversible, which is unconducive some optoelectronic In this article, electromechanical softness ferroelectric lattice employed, makes strong coupling relationship between electric field photonic...
2D metal thiophosphate SnP 2 S 6 was discovered as a new dielectric layer with high constant (≈23), realizing low subthreshold slope down to 69.4 mV dec −1 in the field effect transistor device geometry.
Abstract Ferroelectric oxide nanocrystals, in combination with the robust coupling of an electric field crystal structure symmetry, makes such systems agreeable to field-induced structural transformation. The luminescent properties rare earth ions are sensitive symmetry surrounding field. luminescence tuning is important assignment research materials. However, current conditional feasibility and reversibility exploration modification remain major challenges. In this article, modulation has...
Abstract Understanding the interplay between magnetic and optoelectronic properties developing spin‐optoelectronic devices are promising research strategies to further study 2D materials advance their applications. Here, broadband photoresponse in newly synthesized Fe 0.75 Ta 0.5 S 2 single crystals is reported. Because uncompensated moment of spin glass state pinned by antiferromagnetic state, a large exchange bias field ≈1.98 T found at K when cooled down 7 T. The as‐prepared samples show...
Autologous fat particle transplantation has been widely used by surgeons. The present study evaluated the effect of Notoginsenoside R1 (NR1) treatment on rat autologous graft, along with quality and retention rates. Male Sprague‑Dawley rats (n=60) received auto‑transplantation from left abdominal cavity into lateral dorsum. A total 14 days after surgery, NR1 in different doses (50, 100 200 mg/kg/day) was injected rats, following which blood graft samples were harvested at 7, 28. Assessments...
Twisted interface structure of two-dimensional materials offers nearly limitless platforms for the design novel metamaterials. The natures these twisted systems depend strongly on angle between adjacent layers. Due to intriguing optical and electronic properties observed in graphene transition metal dichalcogenides, this field has attracted increased attention. Here, we employ conductive atomic force microscopy (CAFM) investigate vertical conductivity small bilayer MoS<sub>2</sub>...
The development of integrated multifunctional materials with transparent characteristics meets the requirements optoelectronics and communication. coupling stimuli-responsive has become a frequently considered strategy. Experimentalists not only search for photonic excellent physical chemical properties, but also pursue precise reversible spectral modification. In this study, luminescent center Ni2+ is artificially introduced into LiNbO3 nanoferroelectric materials. ion-based exhibit novel...