T. Kobayashi

ORCID: 0009-0004-1205-8127
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About
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Research Areas
  • Magnetic confinement fusion research
  • Semiconductor materials and devices
  • Superconducting Materials and Applications
  • Silicon Nanostructures and Photoluminescence
  • Fusion materials and technologies
  • Thin-Film Transistor Technologies
  • Semiconductor materials and interfaces
  • Advancements in Semiconductor Devices and Circuit Design
  • Quantum and electron transport phenomena
  • Semiconductor Quantum Structures and Devices
  • Physics of Superconductivity and Magnetism
  • Photonic and Optical Devices
  • Quantum Computing Algorithms and Architecture
  • Oxidative Organic Chemistry Reactions
  • Semiconductor Lasers and Optical Devices
  • Quantum, superfluid, helium dynamics
  • Silicon and Solar Cell Technologies
  • Magnetic Properties and Applications
  • Laser-Plasma Interactions and Diagnostics
  • Advanced Fiber Laser Technologies
  • Synthesis of Organic Compounds
  • Iterative Learning Control Systems
  • 3D IC and TSV technologies
  • Polyoxometalates: Synthesis and Applications
  • Characterization and Applications of Magnetic Nanoparticles

Mitsubishi Chemical (Japan)
2023-2024

Keio University
2023

Chubu University
2018

Hitachi (Japan)
1975-2003

Advanced Science Research Center
1990

Hitachi Maxell (Japan)
1990

The suppression behaviour of magnetic island growth using electron cyclotron heating and lower hybrid current drive is analysed. A quasi-linear model developed for suppression, including the local peaking effect resistivity RF-driven within island. Pulsed launching waves synchronized with plasma diamagnetic rotation frequency can strongly suppress

10.1088/0029-5515/24/5/004 article EN Nuclear Fusion 1984-05-01

A high-performance bipolar transistor technology has been developed for emitter formation using in-situ phosphorus doped polysilicon (IDP). Using this technology, a Si was designed with shallow junction, an ultra-high current gain, and cutoff frequency (f/sub T/) of 64 GHz. Furthermore, the product f/sub T/ BV ceo 200 GHz-V achieved. This value is nearly equal to physical limitation homojunction silicon transistors. The reported here believed be very promising future fabrication...

10.1109/iedm.1991.235360 article EN 2002-12-09

Recent lower hybrid current drive (LHCD), and heating (LHH) experiments on JT-60 are reported. The product of neRpIRF approximately 12.5*1019 m-2 MA was achieved at the LH power 4.5 MW, CD efficiency, energy confinement, global balance heat load divertor plates were investigated in high LHCD plasmas. Nearly steady state H-mode discharges found during with two different frequency injections. Sawtooth suppression NB heated plasmas by have shown an improvement confinement near plasma center....

10.1088/0741-3335/32/11/003 article EN Plasma Physics and Controlled Fusion 1990-11-01

Divertor effects on the particle confinement time in a tokamak plasma are investigated by modelling of particle, momentum and energy transports divertor transport main plasma, with simplified model for neutral-particle transport. The has three equilibrium states limited range ion flux entering divertor. It is found that existence might lead to mode conversion characteristics during additional heating.

10.1088/0029-5515/25/7/007 article EN Nuclear Fusion 1985-07-01

This paper reports on the cause of hetero-emitter-like characteristics recently discovered for a phosphorus doped poly-Si emitter transistor, which is crystallized from an in-situ amorphous Si film. The band structure in investigated using (1) transistor and (2) I-V interface between layer substrate. As result, new kind potential barriers are observed conduction valence at interface. barrier proved to be origin characteristics. According interface, formation probably due discontinuity...

10.1109/16.368038 article EN IEEE Transactions on Electron Devices 1995-03-01

A high-performance bipolar transistor has been developed using an in-situ phosphorus doped polysilicon (IDP) technique for emitter formation. The demonstrated in ultrahigh current gain of 700, a maximum cutoff frequency f/sub T(max)/ 64 GHz, and breakdown voltage between collector BV/sub CEO/ 3.6 V. At V/sub CE/ values 2 3 V, product 200 GHz-V achieved. This value is nearly equal to the physical limitation homojunction silicon transistors.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/16.223725 article EN IEEE Transactions on Electron Devices 1993-01-01

A tokamak reactor concept for steady-state operation has been studied. This uses the compressional Alfvén wave to sustain plasma current. Its structure is simplified by eliminating poloidal coils in torus centre. The start-up scenario obtained minimizing and electric powers of through solving power balance Grad-Shafranov equations. operating point from viewpoint maximizing Q-value (Q = fusion power/current drive power). largest using rather than other RF waves.

10.1088/0029-5515/24/11/006 article EN Nuclear Fusion 1984-11-01

Quantum computing quantum Monte Carlo (QC-QMC) is an algorithm that can be combined with algorithms such as variational eigensolver (VQE) to obtain the ground state higher accuracy than either VQE or QMC alone. Here we propose combining QC-QMC hybrid tensor network (HTN) extend applicability of for system beyond size a single device, called HTN+QMC. For HTN in two-layer quantum-quantum tree tensor, HTN+QMC $O(n^2)$-qubit trial wave function executed by using only $n$-qubit device excluding...

10.48550/arxiv.2303.18095 preprint EN cc-by-nc-sa arXiv (Cornell University) 2023-01-01

For part I see ibid., vol.42, no.3, pp.419-26 (1995). The purpose of this paper is to clarify the cause hetero-emitter-like characteristics reported for bipolar transistors having a poly-Si emitter which crystallized from an in-situ phosphorus-doped amorphous Si layer. It has been clarified by X-ray diffraction measurements that there large lattice deformation at interface layers with substrate. This corresponds tensile stress about 1.0 GPa. We have calculated band structure potential theory...

10.1109/16.368040 article EN IEEE Transactions on Electron Devices 1995-03-01

In this paper, we present a transistor having novel polysilicon emitter with an ultra-shallow n+ diffused layer, formed by low-temperature annealing of phosphorus doped amorphous silicon (a-Si) film. This demonstrates very higher current gain than that conventional transistors.

10.1109/vlsit.1991.705992 article EN Symposium on VLSI Technology 1991-01-01

The calculation accuracy of TOSCA was examined using the 180 degrees sectoral H-shaped dipole magnet model with a maximum field 2.3 T and strongly saturated iron poles. measured magnetic uniformities in gap between poles agreed those calculated by within order 10/sup -3/. When central low, good agreements -4/ were obtained. fields additional yoke placed close to end also compared calculations. about 20%.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/20.106465 article EN IEEE Transactions on Magnetics 1990-03-01

The empirical scaling of the electron thermal diffusivity, χe, is investigated for more than 100 beam-heated discharges. These discharges include two major features: 1) high-temperature and high-density plasma (Te(0)≈Ti(0)≈2.5–3 keV at e≈(5–7) × 1013 cm−3, PNBI ⪅ 4 MW), which will be basis breakeven experiments in next-generation tokamaks, 2) three types discharges, i.e. good poor confinement divertor limiter – All kinds (good heating discharges) have fhe same functional form χe within ∼ 40%...

10.1088/0029-5515/25/10/005 article EN Nuclear Fusion 1985-10-01

10.7567/ssdm.2011.bl-1-1 article EN Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials 2011-09-28

10.7567/ssdm.2013.m-2-6 article EN Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials 2013-09-25
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