A5102639010- Advanced Thermoelectric Materials and Devices
- Thermal properties of materials
- Semiconductor materials and devices
- Thermal Radiation and Cooling Technologies
- Silicon Nanostructures and Photoluminescence
- Chalcogenide Semiconductor Thin Films
- Solid-state spectroscopy and crystallography
- Photonic and Optical Devices
- Perovskite Materials and Applications
- Heat Transfer and Optimization
- Semiconductor Quantum Structures and Devices
Pohang University of Science and Technology
2024
IMEC
2020-2021
The electrical activity of extended defects in III–V materials, combining different analysis methods based on lifetime extraction from diode current-voltage characteristics, time resolved photoluminescence (TRPL) and deep level studies using Deep Level Transient Spectroscopy (DLTS) is reviewed. To that purpose p+n junction diodes have been fabricated In0.53Ga0.47As hetero-epitaxial layers semi-insulating InP or GaAs substrates. By depositing a strained buffer layer, the Extended Defect...
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The widespread adoption of halide perovskites for application in thermoelectric devices, DC power generators, and lasers is hindered by their low charge carrier concentration. In particular, increasing concentration considered the main challenge to serve as a promising room-temperature material. Efforts have been devoted enhancing doping composition engineering. However, coupling between mobility, along with poor stability these materials, impedes development applications. Herein, we...
Two new templates for strain-relaxed detachable Ge are introduced. The first one is based on epitaxial growth of a Si-on-Nothing (SiON) platform while the second consists Ge-on-Nothing (GeON). SiON and GeON obtained from reorganization macro-porous Si Ge, respectively, fabricated regular substrates using conventional lithography, dry-etching annealing routines. Both contain similar densities threading dislocations as typically strain relaxed grown bulk Si. In case, excess carrier lifetime...