A5012949170- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- GaN-based semiconductor devices and materials
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Semiconductor Detectors and Materials
- Aluminum Alloys Composites Properties
- Phase-change materials and chalcogenides
- Copper Interconnects and Reliability
- Microstructure and mechanical properties
- Ga2O3 and related materials
- Chalcogenide Semiconductor Thin Films
- Magnetic properties of thin films
- Electronic Packaging and Soldering Technologies
- Magnetic Properties and Applications
- Nanowire Synthesis and Applications
- Sodium Intake and Health
- Economic and Technological Innovation
- Genetics and Neurodevelopmental Disorders
- Metal and Thin Film Mechanics
- Magneto-Optical Properties and Applications
- VLSI and Analog Circuit Testing
- 3D IC and TSV technologies
- Iron-based superconductors research
IMEC
2017-2022
KU Leuven
2018-2021
Cedars-Sinai Smidt Heart Institute
2018
Cedars-Sinai Medical Center
2018
National Chung Hsing University
2014
Southern Taiwan University of Science and Technology
2014
National Cheng Kung University
2013
Academia Sinica
2009
National Tsing Hua University
2006
Syntek Technologies (United States)
2005
Uncontrolled hypertension is a major problem among non-Hispanic black men, who are underrepresented in pharmacist intervention trials traditional health care settings.We enrolled cohort of 319 male patrons with systolic blood pressure 140 mm Hg or more from 52 black-owned barbershops (nontraditional setting) cluster-randomized trial which were assigned to pharmacist-led (in barbers encouraged meetings specialty-trained pharmacists prescribed drug therapy under collaborative practice...
Squamous cell carcinoma (SCC) cells refractory to initial chemotherapy frequently develop disease relapse and distant metastasis. We show here that tumor suppressor WW domain-containing oxidoreductase (WWOX) (also named FOR or WOX1) regulates the susceptibility of SCC methotrexate (MTX) in vitro cure MTX therapy. increased WWOX expression, accompanied by caspase activation apoptosis, MTX-sensitive lines biopsies. Suppression a dominant-negative small interfering RNA targeting blocked...
Barium titanate (BaTiO3 or BTO) is a perovskite structure material with interesting intrinsic properties, such as spontaneous ferroelectricity electro-optical behavior, which strongly depend on thin film crystallinity. For functional oxide systems, the pulsed-laser deposition (PLD) approach one promising growth technique due to its precise stoichiometry control of metals composing crystal and higher oxygen environment compared classically used molecular beam epitaxy (MBE) approach. In this...
In this article, a metal/carbon-doped GaN (GaN:C)/Si-doped (GaN:Si) structure was used to investigate the defect characteristics and carrier transport mechanisms in GaN:C layers with different carbon doping concentration. Capacitance-voltage, current-voltage, deep-level transient spectroscopy measurements were performed at temperatures. At forward bias, pinning effect found interface of GaN:C/GaN:Si layer, due defects capturing electrons. The currents samples high concentration (NC > 1 × 10...
In0.53Ga0.47As p + n diodes with different densities of extended defects have been analyzed by detailed structural and electrical characterization. The introduced during Metal-Organic Vapor Phase Epitaxy (MOVPE) growth using a lattice-mismatched layer on semi-insulating InP or GaAs substrate. residual strain indium content in the n-type determined high-resolution X-ray diffraction, showing nearly zero fixed ratio 0.53. deep levels characterized Deep Level Transient Spectroscopy. mean value...
In this work, we will address the opportunities of a hybrid III-V/CMOS technology for next generation wireless communication, beyond 5G, moving to operating frequencies above 100GHz. Challenges related III-V upscaling and CMOS co-integration using 3D technologies be discussed.
Monolithically integrated $\mathrm{Ga}\mathrm{As}$ $p$-$i$-$n$ diodes are demonstrated on 300-mm $\mathrm{Si}$ $(001)$ substrates using a nanoridge-engineering approach. Deep-level transient spectroscopy (DLTS) is used to perform defect analysis for nanoridge and planar diodes. The point defect, EL2 with ${N}_{T}\ensuremath{\simeq}3\ifmmode\times\else\texttimes\fi{}{10}^{14}\phantom{\rule{0.2em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$, observed A methodology developed extract the surface-state...
The world is more than ever relying on connectivity in our daily life as well professional life. With 5G being rolled out, the industry looking already at next generation of mobile communication to bring even higher speeds and connections previous generations. But with we are an inflection point where it not only about data rates connections, but connecting different kind devices new ways humans machines interact each other. frequencies, low latency reliability requirements will put a lot...
The observation and interpretation of Frank stacking faults, Shockley Lomer dislocations, 60° misfit which have similar line shapes in the (001) In 0.53 Ga 0.47 As crystalline surface, are performed with electron channeling contrast imaging (ECCI) technique. To minimize backscattered (BSE) that resulted from surface morphology, a relatively flat region is first selected compared an atomic force microscopy (AFM) image then, subsequently, examining ECCI transmission (TEM)‐like invisibility...
The electrical activity of extended defects in III–V materials, combining different analysis methods based on lifetime extraction from diode current-voltage characteristics, time resolved photoluminescence (TRPL) and deep level studies using Deep Level Transient Spectroscopy (DLTS) is reviewed. To that purpose p+n junction diodes have been fabricated In0.53Ga0.47As hetero-epitaxial layers semi-insulating InP or GaAs substrates. By depositing a strained buffer layer, the Extended Defect...
To investigate the defects from gate regrowth process, samples with and without p‐GaN process are fabricated by metalorganic chemical vapor deposition (MOCVD). The DC characteristics indicate larger leakage ( I gs ) between GaN channel in sample than nonregrowth counterpart. In addition, significant Si/O impurities introduced at interface regrown AlGaN barrier. low‐frequency noise (LFN) measurement deep‐level transient spectroscopy (DLTS) further carried out to defectivity barrier interface,...
The relationship between the Threading Dislocation Density (TDD), generation (τg) and recombination lifetime (τr) in relaxed n-type In.53Ga.47As is investigated for a series of p+n junction diodes, containing an TDD ranging from 105 to 1010 cm-2. TDs are generated intentionally by lattice-misfit growth on Semi-Insulating (SI) InP GaAs substrates. lifetimes have been extracted diode Current-Voltage (I-V) Photoluminescence (PL) analysis showing that TDDs affect their values above density about...
An overview is given on how to tackle the question of electrical activity extended defects which are inevitably present in hetero-epitaxial III-V layers silicon. Analysis methods described rely simple device structures containing a specific type defect (here, threading dislocations). Applying same real scaled FinFETs rather challenging. Instead Generation-Recombination noise spectroscopy provides data that can be compared with other more standard techniques, like Deep-Level Transient...
Abstract Several In .53 Ga .47 As p+n junctions with various extended defect densities (EDDs) have been grown by metalorganic vapor phase epitaxy (MOVPE), carefully controlling the growth conditions. After fabrication, T-dependent J-V, C-V and double DLTS (DDLTS) are performed to extract electrical field dependence of levels. From this characterization, it is derived that defects dominate enhancement factor Г regardless value EDD significantly increases leakage current under reverse bias...
In this work, deep levels present in n-type In0.53Ga0.47As hetero-epitaxial layers grown lattice-matched on InP substrates by molecular beam epitaxy have been studied deep-level transient spectroscopy (DLTS). Metal–oxide–semiconductor capacitors are employed, based an Al2O3 gate oxide. It is shown that a single, near mid-gap electron trap dominates the DLT-spectra, whatever surface pre-or post-gate oxide deposition treatment. At same time, it level parameters vary significantly from...
Electrically active defects in carbon-doped GaN layers were studied with a metal/carbon-doped (GaN:C)/Si-doped (GaN:Si) MIS structure. The GaN:C grown three different carbon doping concentrations (NC). A semi-vertical metal/semi-insulator/n-type semiconductor (MIS) device was fabricated to perform deep-level transient spectroscopy (DLTS) measurements. Two electron traps E1 and E2 energy level at EC − (0.22–0.31) eV (0.45–0.49) observed. are associated nitrogen vacancy VN-related defect the...
Abstract The paper briefly reviews some of the present-day state-of-the art III-V devices processed on a Si platform reported in literature, before addressing defect engineering aspects for processing substrate from both structural and electrical performance perspective. identification extended defects will be illustrated by case studies based leakage current lifetime investigations, Deep Level Transient Spectroscopy (DLTS) analysis low frequency noise spectroscopy. Information basic...
This paper gives an overview on the electrical activity of extended defects in III-V materials, combining different analysis methods, which are based lifetime extraction from diode current-voltage characteristics and deep-level studies using Deep-Level Transient Spectroscopy (DLTS). To that purpose p+n junction diodes have been fabricated In0.53Ga0.47As hetero-epitaxial layers semi-insulating InP or GaAs substrates. By depositing a strained buffer layer, Extended Defect Density (EDD) can be...