A5088370818- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Electronic and Structural Properties of Oxides
- Microwave Engineering and Waveguides
- Structural Health Monitoring Techniques
- Structural Engineering and Vibration Analysis
- Antenna Design and Analysis
- Neuroscience and Neural Engineering
- Advanced Antenna and Metasurface Technologies
- Vibration Control and Rheological Fluids
- Conducting polymers and applications
- Supercapacitor Materials and Fabrication
- Semiconductor materials and devices
- Advanced battery technologies research
Xidian University
2023-2024
Yangtze Normal University
2024
Beihang University
2019
Shanxi University
2016
Precision equipment is usually accompanied with vibrations during road or railway transportation. Sometimes the vibration exceeds given limit, leading to damage of equipment. It necessary control However, it still difficult adjust parameters a designed isolation system for transportation different precision under various conditions. Aiming at satisfying requirements equipment, this paper proposes parallel air spring based on principle limiting lateral deflection. According measured...
This Letter investigates the effect of barrier regulation by changing compliance current (CC) on resistance switching (RS) modes. The device exhibits bipolar resistive (BRS) with low CCs (1, 3, 7, and 12 mA) complementary (CRS) without CC. By analyzing conduction mechanism, variation law Schottky height under different is studied, RS modes are explained degree nitrogen enrichment in non-inert electrode. paper further explores correlation between BRS CRS. Endurance tests show that expected to...
This Letter is about the role of bottom electrode in resistive switching SiNx-based random-access memory. Titanium nitride (TiN) and platinum (Pt) are used as electrodes to fabricate devices whose I–V characteristics compared. The with Pt have digital behavior a main memory window. However, TiN provide an analog gradual operation. We propose that this difference due different work functions top nitrogen-rich layer formed at SiNx/TiN interface. function larger than device electrodes, which...
Herein, a digital–analog hybrid resistive random‐access memory (RRAM) is prepared by integrating the structurally similar SiN x ‐based digital‐type RRAM with analog‐type heterogeneous integration method. The Pt/SiN /Ta/Ru digital due to formation and breakage of internal silicon dangling bonds conductive filaments, TiN/SiN structure an analog traps‐filled limit region space‐charge limited current. heterogeneously integrated has good cycling stability endurance characteristics, high linearity...
Herein, the effect of temperature on switching characteristics and conduction mechanism Ti/SiN x /Pt resistive random access memory device is investigated. The behavior investigated by comparing I–V curves in range RT‐653 K. dependence current within RT‐463 K It found that exhibits good bipolar K, low resistance state (LRS) high (HRS) show an increasing then decreasing trend with temperature. There a stronger LRS from ohmic to Schottky emission under LRS, which attributed involvement...
In this paper, a capacitive-fed resonator is designed and investigated to excite the small bent planar monopole antenna. The proposed principle of bandwidth enhancement verified by 2.4 GHz antenna design. enhanced 200 MHz, within size 18.6×24 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (about 0.15λ×0.19λ).