A5103178952- ZnO doping and properties
- Heusler alloys: electronic and magnetic properties
- Advanced battery technologies research
- Advanced Photocatalysis Techniques
- Magnetic properties of thin films
- Electrocatalysts for Energy Conversion
- Magnetic and transport properties of perovskites and related materials
- Quantum and electron transport phenomena
- Magnetic Properties and Applications
- MXene and MAX Phase Materials
- Electronic and Structural Properties of Oxides
- Rare-earth and actinide compounds
- Caching and Content Delivery
- Catalytic Processes in Materials Science
- Ammonia Synthesis and Nitrogen Reduction
Tianjin University
2011-2024
The fully epitaxial Fe3O4/ZnO heterostructures were fabricated by reactive dc sputtering (Fe3O4) and rf (ZnO) on c-Al2O3 substrates. relationship is verified to be Fe3O4(111)⟨11¯0⟩∥ZnO(0002)⟨112¯0⟩ φ scans. nonlinear rectifying properties of I-V curves observed in the heterostructures. transport mechanism across interface between Fe3O4 ZnO thermal emission Schottky barrier calculated 0.51 eV. magnetoresistance symmetric depends current. spin polarization electrons from into determined 28.5% at 30 K.
Fe3Si films with (001), (112), and (011) c-axis orientations were grown on MgO(001), (011), (111) substrates by sputtering, respectively. The epitaxial relationship of the MgO was verified X-ray diffractions (XRDs) θ−2θ ϕ scans. All planar Hall resistance (PHR) curves different show a nearly sinusoidal behavior at high fields (H ≥ 100 Oe). When magnetic field is below Oe, effect (PHE) lineshapes Fe3Si(001) Fe3Si(112) deviate from sin2θM function abrupt switching patterns. Meanwhile, PHE...
Over 80% fourfold symmetric anisotropic magnetoresistance (AMR) across the interface is observed in epitaxial Fe3O4 (001)/Nb:SrTiO3 (001) heterostructures, while twofold AMR (111)/ZnO (0001) heterostructures rather small. The large considered to be induced by assistance of magnetocrystalline energy for transport electrons applied voltage bias near height Schottky barrier, which further verified fact that a larger critical current needed maximum with heavier Nb-doping.