Po‐Han Chen

ORCID: 0009-0005-2569-5712
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Research Areas
  • 2D Materials and Applications
  • Advanced Sensor and Energy Harvesting Materials
  • Advanced Photocatalysis Techniques
  • Electronic and Structural Properties of Oxides
  • Gas Sensing Nanomaterials and Sensors
  • Catalytic Processes in Materials Science
  • ZnO doping and properties
  • Graphene research and applications
  • X-ray Diffraction in Crystallography
  • Advanced Chemical Physics Studies
  • MXene and MAX Phase Materials
  • Advanced Image Processing Techniques
  • Image Processing Techniques and Applications
  • Crystallization and Solubility Studies
  • Advanced Vision and Imaging
  • Ferroelectric and Negative Capacitance Devices
  • Ga2O3 and related materials
  • Engineering Education and Pedagogy
  • Electrocatalysts for Energy Conversion
  • Mechanical and Optical Resonators
  • CCD and CMOS Imaging Sensors
  • Sustainable Building Design and Assessment
  • Transition Metal Oxide Nanomaterials
  • Photoacoustic and Ultrasonic Imaging
  • Prostate Cancer Diagnosis and Treatment

National Tsing Hua University
2010-2025

Chang Gung Memorial Hospital
2024

Concordia University
2022

Nanyang Technological University
2005

The Ni(OH) 2 /MoS NF interface offers a strain-induced piezoelectric potential that promotes adsorption and intermediates of the reactions, which results in kinetic barrier reduction water-splitting process boosts HER OER.

10.1039/d2ta08461a article EN Journal of Materials Chemistry A 2023-01-01

Abstract Scalable nanoelectronics with energy‐efficient logic technology is crucial for next‐generation edge devices. Low‐dimensional semiconductors, such as transition metal dichalcogenides and single‐walled carbon nanotubes (SWCNTs), have tunable properties reduced short‐channel effects. The unique of each material can be utilized owing to the heterogeneous integration multiple semiconducting channels form complementary metal‐oxide‐semiconductor (CMOS) logic. However, remains challenging....

10.1002/adfm.202212722 article EN Advanced Functional Materials 2023-04-16

Abstract Transition metal dichalcogenides, by virtue of their two-dimensional structures, could provide the largest active surface for reactions with minimal materials consumed, which has long been pursued in design ideal catalysts. Nevertheless, structurally perfect basal planes are typically inert; defects, such as under-coordinated atoms at surfaces or edges, can instead serve catalytically centers. Here we show a reaction probability > 90 % adsorbed methanol (CH 3 OH) on Pt sites Te...

10.1038/s41467-024-44840-z article EN cc-by Nature Communications 2024-01-22

The reactivity of layered PdTe2 toward methanol (CH3OH) decomposition was promoted by surface under-coordinated Pd (denoted as Pduc) generated removing Te with controlled Ar ion bombardment. Methanol on the Pduc sites at vacancies decomposed through competing dehydrogenation and C-O bond cleavage processes; approximately 26% converted to CHx* 17% CHxO* (* denotes adspecies; x = 2 3) major intermediates 180 K, leading a reaction probability >40% an ultimate gaseous production molecular...

10.1039/d5cp00130g article EN Physical Chemistry Chemical Physics 2025-01-01

In this study, the flexoelectric characteristics of 2D TiO

10.1002/smll.202401116 article EN Small 2024-03-08

Gold-peapodded Ga(2)O(3) nanowires were fabricated successfully in a well-controlled manner by thermal annealing of core-shell gold-Ga(2)O(3) nanowires. During the heating process, core gold broken up into chains nanoparticles at sufficiently high temperature mechanism Rayleigh instability. In addition, size, shape, and interspacing between particles can be manipulated varying time and/or forming gas. The plasmonic behaviors these nanostructures are investigated optical spectroscopy. A...

10.1021/nl1005977 article EN Nano Letters 2010-08-17

Across nations and industries, numerous changes are taking place due to globalization. Naturally, the effects channelled back academic world prominently felt at level of higher learning in view its constant contact with industries. Universities institutions have reassess adequacy their existing curricula fulfilling needs arising from With reference issues encountered southeast Asia, this paper examines necessity rethink curriculum a baccalaureate degree civil engineering presents some...

10.1061/(asce)1052-3928(2005)131:2(105) article EN Journal of Professional Issues in Engineering Education and Practice 2005-03-16

This study shows Ti 3 C 2 T x -FOTS surface functionalization enhances piezoelectricity by modifying Si–O bonds, leading to a bifunctional piezocatalyst for simultaneous hydrogen production and wastewater decomposition without light.

10.1039/d3ta06291k article EN Journal of Materials Chemistry A 2023-12-22

Abstract Semiconducting monolayers of transition metal dichalcogenides (TMDs) are considered as emergent materials for nanodevices and optoelectronic applications. The low‐frequency electrical noise TMD‐based devices is much higher than Si other conventional semiconductors. reduction this along with control the Ohmic contact carrier concentration such remain major challenges. Here, (1/ f ) transport properties chemical‐vapor‐deposition‐grown MoS 2 presented. high mobility 20–40 cm V −1 s...

10.1002/aelm.201700340 article EN Advanced Electronic Materials 2017-12-05

Atomically thin van der Waals crystals have emerged as a new class of single-photon emitters (SPEs) that can be created and controlled by strain engineering. Transferring monolayer (ML) over nanostructures enabled position-controlled arrays SPEs, but the process is hard to control has low yield. Pressing an ML with atomic force microscope tips allows greater slow expensive. Here we show nanoimprint on atomically provides route rapid creation large, rewritable localized high Bright narrow...

10.1021/acsphotonics.1c01543 article EN ACS Photonics 2022-02-14

Magnetoresistance (MR), a change of electrical resistance in response to an external magnetic field, revolutionizes the fundamental study spintronics and leads applications solid-state memory devices. Tungsten ditelluride (WTe2) exhibits extremely large MR below 10 K is highlighted explore unique properties at high temperatures, such as ferroelectricity 300 quantum spin Hall effect 100 K. However, these remarkable phenomena only appear exfoliated crystals protected by h-BN encapsulation....

10.1021/acsaelm.2c00763 article EN ACS Applied Electronic Materials 2022-08-30

To investigate the impact of body mass index (BMI) on preoperative characteristics, lower urinary tract symptoms (LUTS), intraoperative variables, surgical outcomes and postoperative complications.

10.2147/cia.s472579 article EN cc-by-nc Clinical Interventions in Aging 2024-12-01

Integrating Building Information Modeling, Deep Learning, and Web Map Service for Sustainable Post-Disaster Recovery Planning Adrianto Oktavianus , Po-Han Chen Jacob J. Lin Pages 706-713 (2023 Proceedings of the 40th ISARC, Chennai, India, ISBN 978-0-6458322-0-4, ISSN 2413-5844) Abstract: recovery is always a major issue after disasters due to urgent need efficient assessment damaged buildings effective management required resources. At same time, it necessary that building planning...

10.22260/isarc2023/0098 article EN Proceedings of the ... ISARC 2023-06-29

Single-atom catalyst has drawn significant attention in the field of environmental engineering nowadays. In this research, single atoms Pt have highly dispersed on wurtzite ZnO nanoflowers, evidenced by high-angle annular dark (HAADF-STEM) image. The atom Pt/ZnO (SAPt/ZnO) was used to degrade organic dye through piezo-photocatalytic process. results showed that SAPt/ZnO could fully decolorize 10 ppm RhB 60 minutes under synergetic ultrasonication and light irradiation with K obs 0.089 min -1...

10.1149/ma2023-02341649mtgabs article EN Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) 2023-12-22

In this paper, we present an integrated circuit which supports Full-HD photorealistic refocusing. contrast to the conventional single-image blurring, it provides physically-correct bokeh effect by rendering and then averaging hundreds of novel views from five images taken in different perspectives. To address huge requirement DRAM bandwidth computing power, adopt a block-based multi-rate framework further propose two techniques: four-direction view generation highly-parallel rendering. The...

10.23919/vlsic.2019.8778155 article EN Symposium on VLSI Circuits 2019-06-01

A large-area and scalable monolayer TMD is feasible to employ in monolithic 3D image sensor scheme. For the first time, we represents a prototype MoS2 phototransistor array with ultrahigh responsivity (>103 A/W) tunable photogain (102∼105) which can be directly implemented on CMOS circuit connected BEOL fine-pitch vertical interconnects. Electric gate pulse modulation mitigates photogating (PG) persistent photoconductance (PPC) effects from layered semiconductor interface. Both...

10.1109/vlsitechnology18217.2020.9265017 article EN 2020-06-01

Abstract Decomposition of adsorbed methanol (CH 3 OH) was activated on under-coordinated Pt (denoted as uc ), produced by removing Te, at layered PtTe 2 surface. Both dehydrogenation and C-O bond scission occurred, resulting in the formation intermediates CH x O* (x = 2, 3; * denotes adsorbates) 1, 2) ultimately production gaseous molecular hydrogen, methane, water formaldehyde. We observed a great reaction probability (> 90 %) sites catalytic selectivity dependent concentration....

10.21203/rs.3.rs-2973986/v1 preprint EN cc-by Research Square (Research Square) 2023-06-06

In this paper, we present an integrated circuit which supports Full-Hd photorealistic refocusing. contrast to the conventional single-image blurring, it provides physically-correct bokeh effect by rendering and then averaging hundreds of novel views from five images taken in different perspectives. To address huge requirement DRAM bandwidth computing power, adopt a block-based multi-rate framework further propose two techniques: four-direction view generation highly-parallel rendering. The...

10.23919/vlsit.2019.8776561 article EN Symposium on VLSI Technology 2019-06-01
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