The data rate of a visible light communication (VLC) system is basically determined by the electrical-to-optical (E-O) bandwidth its light-emitting diode (LED) source. In order to break through intrinsic limitation carrier recombination on E-O in conventional c-plane LEDs based InGaN quantum wells, blue micro-LED with an active region nano-structured wetting layer designed, fabricated, and packaged realize high-speed VLC system. can reach up 1.3 GHz. Based this micro-LED, we demonstrated 2...

In this paper, we demonstrate a high-resolution <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$960\times 540$ </tex-math></inline-formula> blue-emitting active matrix micro-display. The blue micro-display have diagonal length of 0.55 inch, pixel size notation="LaTeX">$8~\mu \text{m}$ with pitch notation="LaTeX">$12.8~\mu , and high density 2000 pixels per inch. single exhibits excellent characteristics...

Solution‐processed small‐molecule bulk heterojunction (BHJ) ambipolar organic thin‐film transistors are fabricated based on a combination of [2‐phenylbenzo[ d , ']thieno[3,2‐ b ;4,5‐ ']dithiophene (P‐BTDT) : 2‐(4‐ n ‐octylphenyl)benzo[ (OP‐BTDT)] and C 60 . Treating high electrical performance vacuum‐deposited P‐BTDT semiconductors with newly developed solution‐processed semiconductor material, OP‐BTDT, in an optimized ratio yields p ‐channel blend carrier mobility as 0.65 cm 2 V −1 s An...

Blue/green light-emitting diodes (LEDs) show great potential in medium/short distance underwater optical wireless communication (UOWC) while suffering limited bandwidth caused by a long radiative recombination carrier lifetime and large resistance-capacitance (RC) constant. We designed, fabricated, packaged 75-µm single-layer quantum dot (QD) blue micro-LED with record high modulation up to 1.03 GHz. The structure of QD reduces the RC delay. A data rate 2 Gbps over 3-m air-underwater channel...

Abstract Two different T-shaped gate structures of high electron mobility transistors (HEMTs) were fabricated by using aluminum gallium nitride/gallium nitride (AlGaN/GaN) grown on silicon carbide (SiC) substrates. The design these was analyzed to evaluate their direct current (DC), small-signal, and large-signal characteristics, with the primary objective application in high-power output amplifiers. (SiNx) exhibited larger parasitic capacitance, which hindered effective enhancement cut-off...

The temperature dependence of photoluminescence from the high-quality unintentionally doped GaSb layers grown by liquid-phase epitaxy has been studied. epitaxial at temperatures above 590 °C, Ga- or Sb-rich solutions, reproducibly have a low-carrier concentration 6–8×1015 cm−3 and exhibit p-type conduction. But it gives n type as Ga-rich solution 360 °C. For samples 16 K spectrum is dominated partially resolved lines related to transitions excitons bound donors neutral acceptors....

Thin film transistors (TFTs) of indium oxide (In2O3) and tin (SnO2) were fabricated on SiO2 gate dielectric using reactive evaporation process. Structural investigation the films revealed that In2O3 polycrystalline in nature with preferred (222) orientation SnO2 exhibited amorphous nature. The x-ray photoelectric spectroscopy measurements suggest oxygen rich presume mixed oxidation states Sn, namely Sn2+ Sn4+. While based TFTs possess n-type channel conduction, anomalous p-type conductivity....

A new gate driver has been designed and fabricated by amorphous silicon (a-Si) technology. With utilizing four clock signals in the design of on array (GOA), pull-up transistor ability for both output charging discharging, layout size proposed can be narrowed bezel panel application. Moreover, lower duty cycle decrease static power loss to further reduce overall consumption driver. The scan direction adjusted switching two direct control present reversal display image. successfully...

Long-wavelength light-emitting diode (LED) devices in the visible band (>492 nm) and their applications high-speed light communication (VLC) have attracted tremendous research interest recently. The electrical-to-optical (E-O) bandwidth of conventional c-plane long-wavelength LEDs is limited by carrier lifetime InGaN quantum well (QW), which a fundamental problem limiting data rate VLC systems. In order to achieve an over GHz E-O for applicable packaged LEDs, it necessary innovate from...

In this article, we report the fabrication of SnO2 thin film transistors (TFTs) fabricated by reactive evaporation. Different from previous reports, TFTs exhibit p-type conductivity in its undoped form. The postdeposition annealing temperature was tuned to achieve p-channel TFTs. on/off ratio and field-effect mobility were ∼103 0.011cm2∕Vs, respectively. To demonstrate inverter circuit, two devices with different threshold voltages combined an output gain 2.8 achieved. realization oxide...

The GaN-based light emitting diodes (LEDs) have a great potential for visible communication (VLC) due to their ubiquitous application in general lighting, but the modulation bandwidth of conventional c-plane LEDs is limited by carrier recombination rate InGaN quantum wells (QWs) polarization-field-induced confined Stark effect (QCSE). Furthermore, high on sapphire substrates can only be achieved at current densities. Here, blue with ultra-thin QWs (1nm) and GaN barriers (3nm) are grown...

In this study, we report a novel structure of enhancement-mode metal-insulator-semiconductor high electron mobility transistor (E-mode MIS HEMT) with p-GaN gate by gate-all-around technology. The is fabricated depositing an insulator and to surround the mesa. length smaller than length, which would easily turn on two dimensional gas (2DEG) channel result in higher drain current thus improve device performance. HEMT has better control, transconductance, lower leakage current. exhibits...

In this article, an active matrix (AM) micro light-emitting diode (MicroLED) display with a resolution of 1920 × 1080 and high pixel density 3200 pixels per inch (ppi) is reported. The single diameter 5 μm on the MicroLED array exhibits excellent characteristics, including forward voltage 2.8 V at 4.4 μA, ideality factor 1.7 in bias 2–3 V, extremely low leakage current 131 fA −10 external quantum efficiency 6.5%, wall-plug 6.6% 10.2 A/cm2, light output power 28.3 μW brightness 1.6 105 cd/m2...

Visible light communication (VLC), as an interdisciplinary paradigm, spans various technologies from basic device sciences to system engineering. Micro-size light-emitting diodes (micro-LEDs), because of their excellent spatio-temporal capability, are promising candidates for use transmitters in versatile high-capacity VLC systems. Novel luminous material, fabrication process, and optical structure were successively employed further increasing the electrical-to-optical (E-O) bandwidth these...

Trifluoromethane-containing plasma is used to passivate the mesa surfaces and suppresses surface leakage current of GaN p-i-n rectifiers. Reduction enhances reverse blocking voltage by 25% measured at J = 1 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Differential forward resistances control samples plasma-treated ones are 0.65 0.49 mΩ-cm , respectively, an excellent Baliga's figure-of-merit more than 800 MW/cm as compared with...

We built a full-duplex high-speed optical wireless communication (OWC) system based on high-bandwidth micro-size devices, for which micro-LED and VCSEL arrays are implemented to establish downlink uplink, respectively. The high-capacity single-pixel quantum dot (QD) can reach data rate of 2.74 Gbps with adaptive orthogonal frequency division multiplexing (OFDM). VCSEL-based line-of-sight (LOS) non-line-of-sight (NLOS) uplinks designed lens-free receiving functions 2.2-m distance....

The carrier concentration of GaSb epitaxial layers grown from Sb-rich solutions by liquid-phase epitaxy is controlled replacing nominally undoped Te-doped polycrystalline to suppress or compensate the background hole concentration. dependence 10 K photoluminescence peak wavelength and intensity on doping level Te-compensated has been investigated. absorption spectra are examined as a function Low-dopant-concentration p-type samples exhibit band gap shrinkage with increasing concentration,...

Indium-tin oxide (ITO) transparent conducting films with a low resistivity of 2–3 × 10-4 Ω·cm have been introduced as window layer in (Al0.7Ga0.7)0.5In0.5P/(Al0.1Ga0.9)0.5In0.5P double-heterostructure orange light-emitting diodes to obtain uniform spatial distribution the emission light, good device performance and high reliability. An output power 450 µW at 20 mA corresponding an external quantum efficiency 1.1% for 620 nm can be achieved.

Bottom gate and top contact thin film transistors were fabricated using In2O3 films as active channel layers. Thin of varying thicknesses in the range 5–20 nm deposited on an SiO2 dielectric by thermal evaporation process presence high purity oxygen. The results atomic force microscopy show that all exhibit dense grain distribution with a root-mean-square roughness 0.6–8.0 nm. Irrespective thickness layer, on/off ratio device is 104. mobility resistivity found to be strong function layer....

A location-controlled-grain technique is presented for fabricating BEOL monolithic 3D FinFET ICs over SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> . The grain-boundary free Si FinFETs thus fabricated exhibit steep sub-threshold swing (<70mV/dec.), high driving currents (n-type: 363 µA/µm and p-type: <tex xmlns:xlink="http://www.w3.org/1999/xlink">$385\ \mu \mathrm{A}/\mu \mathrm{m}$</tex> ), I...

To achieve the high traffic rate of a GaN LED-based visible light communication (VLC), 4 × color-polarization-multiplexing system is demonstrated by using two blue and green LEDs. In measurement, an available bandwidth LEDs can be greater than 465 MHz for VLC modulation suitable analogy front end circuit. Hence, proposed deliver 1.7 to 2.3 Gbit/s <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> –...

Herein, active matrix 370 nm ultraviolet (UV) micro light‐emitting diode (micro‐LED) displays with full high‐definition resolution of 960 × 540 and 1920 1080 high pixel densities almost 2000 3200 pixels per inch (PPI), respectively, are reported. A novel self‐aligned process is used to fabricate the micro‐LED array inverted trapezoidal‐shape mesa, which different from conventional vertical mesa for array. In addition, single diameters 8 5 μm on microarrays exhibit excellent characteristics,...

In1−xGaxP epitaxial layers were grown on (100) GaAs substrates by liquid-phase epitaxy using supercooling technique. The lattice mismatch normal to the wafer surface between layer and substrate varies linearly with supercooled temperature of growth solution. composition-pulling phenomenon was not observed in this study. rate, intensity, full width at half maximum photoluminescent spectrum are also dependent temperature. It is shown that narrowest widths peak 10.6 35 meV 14 300 K,...

In this letter, self-assembled polystyrene nano-spheres with a diameter of 193 nm were used to fabricate the 3-D colloidal-photonic-crystal (CPC) bottom reflector for blue GaN-based light-emitting diodes (LEDs). Experimentally, key point is hydrophilic treatment substrate and immediately disperse suspension into at 30 °C. The equilibrium between particle transport crystallization in aqueous solution helps CPCs form faced-centered-cubic phase when temperature decreases. This will lead...