A5092506264- Quantum and electron transport phenomena
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Topological Materials and Phenomena
- Physics of Superconductivity and Magnetism
- Magnetic properties of thin films
CEA LETI
2023
CEA Grenoble
2023
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2023
Université Grenoble Alpes
2023
We investigate the existence of linear-in-momentum spin orbit interactions in valence band Ge/GeSi heterostructures using an atomistic tight-binding method. show that symmetry breaking at interfaces gives rise to a linear Dresselhaus-type interaction for heavy holes. This results from heavy-hole/light-hole mixings induced by and can be captured suitable correction minimal Luttinger-Kohn, four bands $\mathbf{k}\ifmmode\cdot\else\textperiodcentered\fi{}\mathbf{p}$ Hamiltonian. It is dependent...
Silicon provides a promising platform to host solid-state spin qubits owing long coherence times through isotopic purification and the highly advanced level of development in material processing fabrication techniques. In practice, uniformity is limited by uncontrolled atomistic fluctuations at interface between semiconductor confining material. Maintaining qubit fidelity well above quantum fault-tolerance threshold only possible for clean well-defined two state system accounting specific...
We investigate the existence of linear-in-momentum spin-orbit interactions in valence band Ge/GeSi heterostructures using an atomistic tight-binding method. show that symmetry breaking at interfaces gives rise to a linear Dresselhaus-type interaction for heavy-holes. This results from heavy-hole/light-hole mixings induced by and can be captured suitable correction minimal Luttinger-Kohn, four bands $\vec{k}\cdot\vec{p}$ Hamiltonian. It is dependent on steepness interfaces, suppressed if...
Hole spin qubits realized in Ge heterostructures are a promising quantum computing platform. An accurate description of spin-orbit effects is mandatory numerical methods for device modelling, such as Tight-Binding, to properly describe the physics. This work presents methodology improve interaction and match reference ab initio results. We apply this prototypical Si/Ge heterostructure, we achieve improvement by tuning band alignment onsite potential interface atoms, which indicates that...