A5029920873- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- Liquid Crystal Research Advancements
- Advanced Memory and Neural Computing
- Transition Metal Oxide Nanomaterials
- Advanced materials and composites
- Advanced ceramic materials synthesis
- Acupuncture Treatment Research Studies
- Semiconductor materials and interfaces
- Perovskite Materials and Applications
- Nonlinear Optical Materials Research
- Spine and Intervertebral Disc Pathology
- biodegradable polymer synthesis and properties
- Musculoskeletal pain and rehabilitation
- Semiconductor Quantum Structures and Devices
- Advanced Polymer Synthesis and Characterization
- Orthopaedic implants and arthroplasty
- Solid-state spectroscopy and crystallography
- Bone Tissue Engineering Materials
- Orthopedic Infections and Treatments
The University of Tokyo
2025
Southwest Jiaotong University
2024
Shanghai Tenth People's Hospital
2018
Anyang Hospital of Traditional Chinese Medicine
2018
Shanghai Institute of Microsystem and Information Technology
2008-2011
Chinese Academy of Sciences
2008-2011
A phase change memory cell with tungsten trioxide bottom heating layer/electrode is investigated. The crystalline layer promotes the temperature rise in Ge2Sb2Te5 which causes reduction reset voltage compared to a conventional cell. Theoretical thermal simulation and calculation for process are applied understand effect of layer/electrode. improvement efficiency PCM mainly originates from low conductivity material.
A new device structure of phase-change memory (PCM) cell with a Probe like bottom electrode (PBE) was proposed and its electrical-thermal characteristics were investigated by three-dimensional finite element analysis. The programming region the definition (GST) layer in PBE is much smaller than that conventional normal-bottom-contact (NBC) after RESET operation. high concentrations electric-field density electric-current small GST have advantages reducing power consumption increasing heating...
Lumbar intervertebral disc herniation is a kind of syndrome caused by stimulation or pressure nerve root and cauda equina due to disorder, fibrous ring rupture, pulpiform nucleus protrusion. Application traditional Chinese medicine (TCM) including acupuncture therapy cupping unique effective treatment for lumbar in China. Hence, we try investigate the combined clinical efficacy modified Taiyi miraculous moxa roll on patients with herniation. Seventy were randomly assigned into group ( n =...
A refined structure, namely ring in Ge2Sb2Te5 (GST) structure (RIG) for low reset current and high thermal efficiency is proposed this investigation. comprehensive analysis of the phase change random access memory (PCRAM) by three-dimension finite element modeling proposed. The effect temperature on device cell design optimization investigated. This study provides an insight into issues phenomena PCRAM.
A novel phase-change memory cell with a heating layer structure (HLS) was proposed in this work. By having an additional Titanium Nitride (TiN) under the bottom electrode, heat loss can be effectively prevented. three-dimensional finite element model for phase change (PCM) is established to simulate thermal and electrical behaviors. Compared traditional (TS) PCM cell, simulation results indicate that HLS has advantages of increasing efficiency reducing loss. The effect access device also...
A comprehensive thermal analysis of the Phase change random memory (PCRAM) by 3D finite element modeling is proposed. The impact on device cell design and optimization investigated. Such an can be used as a guideline for optimum design. This manuscript provides insight into issues phenomena in PCRAM. Refined structure, ring GST structure (RIG), proposed high density low power consumption.
In this paper, a preparation process of PCRAM access-diode-array with proprietary intellectual property rights (PIPR) is shown simply. Then, Relationship between device parameters and diode performance, including drive-current, breakdown, especially disturb-current, which influences the data-veracity reliability PCRAM, analyzed from views carriers distribution parasitic PNP-BJT. At end, simple effective method, can reduce disturb-current radio 15% to 0.25%, according technology process. TCAD...
A new operation strategy has been proposed to reduce the programming voltage in RESET of phase change memory (PCM). The amorphous state generated after first pulse would restrict current flowing through materials, increasing heat efficiency. Thus, second increase. accumulative cover bottom electrode finally. commences successfully. In strategy, could consist small amplitude and width pulses (1V/35ns). is reduced with conventional structure, reducing costing on refining cell structure power...
Phase change memory (PCM) is considered to be one of the best candidates for next-generation non-volatile memories. A three-dimension finite element model PCM established simulate electric, thermal, stress and phase state distribution during RESET SET operation. The impact thermal on device cell design optimization investigated. simulation results have been used as a guideline optimum low power consumption high speed.
A three-dimension finite element model for phase change random access memory (PCRAM) is established to simulate electric, thermal and state distribution during SET operation. The behaviors of the heater addition structure (HS) ring-type contact in bottom electrode (RIB) are compared with each other. simulation results indicate that small BEC benefit heat efficiency reliability ratio between high resistance low operation HS cell, contactor (BEC) size Fx=80nm good choice RIB cell combined...
Abstract TiO 2 and HfO with different electrical conductivity were used as buffer layer for phase change memory (PCRAM) cell, where Si‐Sb‐Te alloy was storage medium in the PCRAM cell. The properties of cells without compared through resistance‐voltage measurements. It is found that cell both has relative low operation voltage. Furthermore, inserting can also improve device stability. considered suitable needed especially future high density storage. (© 2010 WILEY‐VCH Verlag GmbH & Co....