Haoliang Shen

ORCID: 0009-0006-0639-513X
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About
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Research Areas
  • Graphene research and applications
  • Ferroelectric and Negative Capacitance Devices
  • Molecular Junctions and Nanostructures
  • Advanced Memory and Neural Computing
  • Quantum and electron transport phenomena
  • 2D Materials and Applications
  • ZnO doping and properties
  • Advancements in Battery Materials
  • MXene and MAX Phase Materials
  • Quantum Dots Synthesis And Properties
  • Topological Materials and Phenomena
  • Advanced biosensing and bioanalysis techniques
  • GaN-based semiconductor devices and materials
  • Carbon Nanotubes in Composites

Suzhou Research Institute
2024

Nanjing University
2013-2015

Collaborative Innovation Center of Advanced Microstructures
2014-2015

Université Joseph Fourier
2015

Laboratoire National des Champs Magnétiques Intenses
2014-2015

Université Toulouse III - Paul Sabatier
2015

Centre National de la Recherche Scientifique
2015

Hankou University
2013

Abstract Micro light-emitting diode (micro-LED) will play an important role in the future generation of smart displays. They are found very attractive many applications, such as maskless lithography, biosensor, augmented reality (AR)/mixed etc, at same time. A monitor that can fulfill saturated color rendering, high display resolution, and fast response time is highly desirable, micro-LED-based technology could be our best chance to meet these requirements. At present, semiconductor-based...

10.1088/2515-7647/acf972 article EN cc-by Journal of Physics Photonics 2023-09-13

Memristive devices based on vertical heterostructures of graphene and TiOx show a significant power reduction that is up to ∼10(3) times smaller than conventional structures. This arises as result tunneling barrier at the interface. The tunable, opening possibility engineering several key memory characteristics.

10.1002/adma.201306028 article EN Advanced Materials 2014-02-13

This Perspective aims to provide a concise survey of current progress and outlook future directions in high-performance transistors integrated circuits (ICs) based on 2D semiconductors.

10.1093/nsr/nwae001 article EN cc-by National Science Review 2024-01-04

Through magnetotransport measurements, we investigate ultrasmooth graphene bilayer nanoribbons obtained by multiwall carbon nanotube unzipping, under a high magnetic field up to 55 T. The quality of the samples allows us observe Hall quantization in ribbons as narrow 20 nm. presence, for certain samples, isolated peaks resistance plateau is found be related very moderate long-range disorder, which induces magnetic-field-dependent interedge scattering. Tight-binding numerical simulations...

10.1021/acsnano.5b05478 article EN ACS Nano 2015-12-09

We present the width dependent study of edge distribution graphene nanoribbons unzipped from multi-wall nanotubes. The partial unzipping carbon nanotubes yields a mixture and nanoribbons. Comparing atomic resolution images scanning tunneling microscopy with lattice graphene, structures are identified. Below 10 nm, edges closer to armchair type. Above 20 ribbons prefer have close zigzag In between, more random is found. findings potential usages for control in nanoribbon based applications.

10.1063/1.4803701 article EN Journal of Applied Physics 2013-05-06

We present the study of quantum tunneling through a vertical two-barrier structure sandwiching graphene nanoribbon object. Scanning microscopy measurements show staircase I-U characteristics and oscillating dI/dU spectra. To identify physical origin observed effect, we varied resistance tip-ribbon junction found tip-to-ribbon distance dependent period change. Together with numerical analysis, confirm that resonances in spectroscopy arise from Coulomb blockade effect. The effect nanoribbons...

10.1103/physrevb.88.125408 article EN Physical Review B 2013-09-04
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