A5110257355- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Transition Metal Oxide Nanomaterials
- Electronic and Structural Properties of Oxides
- Semiconductor materials and devices
- Conducting polymers and applications
- Perovskite Materials and Applications
- Artificial Intelligence in Healthcare and Education
- Impact of AI and Big Data on Business and Society
- Healthcare Systems and Public Health
National Health Research Institutes
2025
Feng Chia University
2013-2018
The global aging population poses critical challenges for long-term care (LTC), including workforce shortages, escalating health costs, and increasing demand high-quality care. Integrating artificial intelligence (AI), the Internet of Things (IoT), edge (EI) offers transformative potential to enhance quality, improve safety, streamline operations. However, existing research lacks a comprehensive analysis that synthesizes academic trends, public interest, deeper insights regarding these...
Abstract This study investigates an advanced copper (Cu) chemical displacement technique (CDT) with varying the time for fabricating Cu/SiO 2 -stacked resistive random-access memory (ReRAM). Compared other Cu deposition methods, this CDT easily controls interface of Cu-insulator, switching layer thickness, and immunity etching process, assisting 1-transistor-1-ReRAM (1T-1R) structure system-on-chip integration. The modulated shape Cu-SiO thickness SiO obtained by CDT-based on were confirmed...
In this study, a high-performance TixZrySizO flash memory is demonstrated using sol-gel spin-coating method and formed under low annealing temperature. The high-efficiency charge storage layer by depositing well-mixed solution of titanium tetrachloride, silicon zirconium followed 60 s at 600°C. exhibits noteworthy hot hole trapping characteristic excellent electrical properties regarding window, program/erase speeds, retention. At only 6-V operation, the speeds can be as fast 120:5.2 μs with...
Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form bottom electrode of ReRAM devices. Compared with conventional deposition methods, Cu-CDT method has numerous advantages for fabrication, including low cost, temperature and provision unconsolidated film large surface roughness. Moreover, a favorable candidate overcoming...
Abstract In this study, a polyimide (PI) thin film is synthesized as resistive switching layer for random access memory (ReRAM) applications. The experimental results on thickness show that the Schottky effect between interface of and metal films dominant mechanism in high-resistance state (HRS). We, therefore, propose rubbing post-treatment to improve device performance. Results uniformity leakage HRS, well power consumption low-resistance (LRS), are improved. density set process less than...
High-k thin film is a candidate material for the charge storage layer of non-volatile flash memory. This can achieve faster programming speeds and better charge-retention performance. paper reports fabrication CoxHfySizO high-k formed by using sol-gel technique low-temperature annealing. The proposed method involves oxygen plasma treatment to passivate surface maintain formation with high quality. X-ray analysis presented in this study showed that metal-rich cobalt hafnium silicate after...
We have developed an organic-based resistive random access memory (ReRAM) by using spin-coated polyimide (PI) as the layer. In this study, chain distance and number of stacks PI molecules are investigated. employed different solid contents polyamic acid (PAA) to synthesize various films, which served layer ReRAM, electrical performance was evaluated. By tuning PAA content, intermolecular interaction energy films is changed without altering molecular structure. Our results show that leakage...