A5040316448- Advanced Photonic Communication Systems
- Photonic and Optical Devices
- Quasicrystal Structures and Properties
- Optical Network Technologies
- Semiconductor Quantum Structures and Devices
- Mineralogy and Gemology Studies
- Nonlinear Optical Materials Studies
- Semiconductor Lasers and Optical Devices
- Laser Material Processing Techniques
- Surface Roughness and Optical Measurements
- Ocular and Laser Science Research
- Nanofabrication and Lithography Techniques
- Radio Frequency Integrated Circuit Design
- Catalytic Alkyne Reactions
- Microstructure and mechanical properties
- Organic Chemistry Synthesis Methods
- Photonic Crystals and Applications
- Synthesis of Organic Compounds
- Metallic Glasses and Amorphous Alloys
- Advanced Optical Sensing Technologies
- Advanced Fiber Laser Technologies
Hebei University of Science and Technology
2024
University of Virginia
1990-2009
McCormick (United States)
2008
The University of Texas at Austin
2004-2005
Chinese Academy of Sciences
1988
InGaAs-InP modified charge compensated uni- traveling carrier photodiodes with both absorbing and nonabsorbing depleted region are demonstrated. The fiber-coupled external quantum efficiency was 60% (responsivity at 1550 nm = 0.75 A/W). A 40-mum-diameter photodiode achieved 14-GHz bandwidth 25-dBm RF output power a 20-mum-diameter exhibited 30-GHz 15.5-dBm power. saturation current-bandwidth products 1820 mA ldr GHz 1560 for the devices, respectively.
We report the observation of a spatial quasiperiodicity in high-resolution electron-microscope images thermodynamically stable decagonal ${\mathrm{Al}}_{65}$${\mathrm{Cu}}_{15}$${\mathrm{Co}}_{20}$ quasicrystal. Well defined quasiperiods consistent with symmetry and x-ray-diffraction data have been found. The structure observed is inconsistent conventional ideal Penrose tiling. There strong evidence for an entropy stabilization mechanism.
We present a growth model of the dodecagonal quasicrystal consisting hexagonal antiprisms on square and equilateral-triangle tesselation derived from close structural relationship with well-known $\ensuremath{\sigma}$ phase.
Third-order intermodulation distortions of an InGaAs/InP partially depleted absorber photodiode (PDA-PD) using high doping levels for both p-type and n-type absorbers are characterised a two-tone measurement technique. The third-order local intercept point (IP3) the device increases only slightly with frequency, remains as 39 dBm up to 20 GHz. frequency characteristics IP3 can be well explained by equivalent circuit model.
Ultrafast laser welding has emerged as a significant technology for the joining of transparent materials and been extensively researched glass in recent years. However, achieving robust connection requires optical contact between samples during processing, which complicates process increases its cost. To achieve high-strength without contact, are typically pressed together to minimize gap, allowing molten completely fill it. In this study, two approaches employed facilitate silica glasses:...
Abstract The stability of the decagonal phase Al65Cu15, Co20 (d phase) has been studied through thermal annealing, electron beam irradiation and recovery experiments using X-ray diffraction techniques. Long-term annealing as-cast melt-spun samples over temperature 940 to 550°C did not show a decagonal-to-crystalline transformation. Upon electron-beam irradiation, d transformed f.c.c. with = 351 Å, was recovered by heating 600°C. A simple cubic (s.c.) 2.87 Å found in thin-film slightly off...
Third-order intermodulation distortion in an InGaAs/InP charge compensated modified uni-traveling carrier photodiode is characterized using a two-tone setup. Plots of the third-order local intercept point (IP3) versus photocurrent exhibit peaks. A simple analytical model developed which explains that peaks are due to interaction voltage-dependent and photocurrent-dependent capacitance effects.
The change of responsivity with applied bias voltage an InGaAs/InP modified charge compensated uni-traveling carrier photodiode has been studied over a wide range input wavelengths. measured wavelength-dependence suggests that the primary reasons for observed characteristics are both Franz-Keldysh effect and impact ionization. Based on experimental results we estimated photodiodepsilas low-frequency third order intercept point (IP3) 61 dBm when choosing appropriate wavelength.
The two-tone third-order intermodulation distortions of an InGaAs/InP modified charge compensated uni-traveling carrier photodiode with both absorbing and non-absorbing depleted region are characterized. Around 12 GHz modulation frequency, the intercept point is >40 dBm over a wide range photocurrents.
We reported a partially depleted absorber evanescently coupled waveguide photodiode that achieves 17 mA saturation current, 0.81 A/W responsivity, >50 GHz bandwidth and /spl plusmn/2.0 mu/m (/spl plusmn/1.3 mu/m) horizontal (vertical) -1 dB coupling tolerances.
We demonstrate a modified uni-traveling carrier photodiode (MUTC-PD) with record-high third-order intercept point of 52dBm at 75mA and 300MHz. To further enhance the dynamic range we propose monolithically integrated traveling wave MUTC-PD array.
The article consists of a Powerpoint presentation on InP-based high-speed photonic devices. paper concludes that devices demonstrated >80 Gbit/s operation; MZM and EA modulators for 80 100 Gbit/s; waveguide-integrated p-i-n photodiodes up to 160 UTC-based photodiode >100 high-power TWPD with >-2.5 dBm 150 GHz high degree integration is feasible.
We reported a partially depleted absorber evanescently-coupled waveguide photodiode that achieves 17 mA saturation current (corresponding to +4.5 dBm RF power) at 40 GHz, 0.81 A/W responsivity and >50 GHz bandwidth.
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