A5028818804- 2D Materials and Applications
- Ga2O3 and related materials
- MXene and MAX Phase Materials
- Control Systems in Engineering
- Semiconductor materials and devices
- Advanced Control Systems Optimization
- Thin-Film Transistor Technologies
- Analytical Chemistry and Sensors
- Advanced Chemical Sensor Technologies
- GaN-based semiconductor devices and materials
- Perovskite Materials and Applications
- Multilevel Inverters and Converters
- Electric and Hybrid Vehicle Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Advanced Photocatalysis Techniques
- Copper Interconnects and Reliability
- Semiconductor materials and interfaces
- Vehicle Dynamics and Control Systems
- Chalcogenide Semiconductor Thin Films
- Silicon and Solar Cell Technologies
- Real-time simulation and control systems
- Sensorless Control of Electric Motors
University of Science and Technology Beijing
2023-2025
Southeast University
2024-2025
The advent of two-dimensional (2D) ferroelectrics offers a new paradigm for device miniaturization and multifunctionality. Recently, 2D α-In2Se3 related III–VI compound manifest room-temperature ferroelectricity exhibit reversible spontaneous polarization even at the monolayer limit. Here, we employ first-principles calculations to investigate group-III selenide van der Waals (vdW) heterojunctions built up by α-Ga2Se3 ferroelectric (FE) semiconductors, including structural stability,...
Beyond three-dimensional (3D) architectures, polar semiconductor heterostructures are developing in the direction of two-dimensional (2D) scale with mix-dimensional integration for novel properties and multifunctional applications. Herein, we stacked 2D Janus MoSSe 3D wurtzite GaN semiconductors to construct MoSSe/GaN by polarity configurations. The structural stability was enhanced as binding energy changed from -0.08 eV/-0.17 eV N -0.24 eV/-0.42 Ga polarity. In particular, reversal contact...
By utilizing the dipole interactions, polar heterostructures are developing toward two-dimensional/three-dimensional (2D/3D) hybrid dimensions for unique phenomena such as polarization-induced electric field, charge separation, band-structure modification, etc. In this study, we have constructed 2D/3D α-In2Se3/GaN by stacking 2D α-In2Se3 and 3D wurtzite GaN semiconductors with distinct polarity configurations. Upon contacting α-In2Se3, structural stability demonstrates a direct dependence on...
As important third-generation semiconductors, wurtzite III nitrides have strong spontaneous and piezoelectric polarization effects. They can be used to construct multifunctional polar heterojunctions or quantum structures with other emerging two-dimensional (2D) semiconductors. Here, we investigate the effect of GaN on interfacial charge transfer electronic properties GaN/MoS2 by first-principles calculations. From binding energy, N-polarity show stronger structural stability than...
This paper proposes a kind of discrete-time sliding-mode predictive control (SMPC) based on nonlinear sliding function for permanent-magnet synchronous motors’ (PMSMs’) speed to improve the convergence performance. Compared with traditional linear function, proposed SMPC has faster rate thanks design fast terminal function. Moreover, one-step prediction is employed, which greatly simplifies algorithm and improves real-time performance its operation. The state will follow expected trajectory...
GaN ultra-thin films are deposited on 4H-SiC substrates using plasma-enhanced atomic layer deposition (PEALD). Our investigation reveals a remarkably narrow temperature window (225 – 275 ℃) for PEALD growth, characterized by substrate hindered nucleation retardation. Within this window, the growth process exhibits three distinct stages, which demarcated 35th and 200th cycles, each displaying unique characteristic, especially in aspects rate, film strain, surface topography, crystallization....