A5059957571- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Semiconductor materials and devices
- ZnO doping and properties
- 2D Materials and Applications
- Metal and Thin Film Mechanics
- MXene and MAX Phase Materials
- Semiconductor Quantum Structures and Devices
- Perovskite Materials and Applications
- Graphene research and applications
- Silicon Carbide Semiconductor Technologies
- Chalcogenide Semiconductor Thin Films
- Radio Frequency Integrated Circuit Design
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Acoustic Wave Resonator Technologies
- Advanced Photocatalysis Techniques
- Quantum Dots Synthesis And Properties
- Gas Sensing Nanomaterials and Sensors
- Copper Interconnects and Reliability
- Nanowire Synthesis and Applications
- Copper-based nanomaterials and applications
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
University of Science and Technology Beijing
2017-2025
Institute of Physics
2006-2022
Chinese Academy of Sciences
2006-2022
Institute of Microelectronics
2010-2012
Wuhan University
2008
The advent of two-dimensional (2D) ferroelectrics offers a new paradigm for device miniaturization and multifunctionality. Recently, 2D α-In2Se3 related III–VI compound manifest room-temperature ferroelectricity exhibit reversible spontaneous polarization even at the monolayer limit. Here, we employ first-principles calculations to investigate group-III selenide van der Waals (vdW) heterojunctions built up by α-Ga2Se3 ferroelectric (FE) semiconductors, including structural stability,...
Plasma-enhanced atomic-layer-deposited GaN thin-films have been introduced into planar perovskite solar cells as electron transport layers.
Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN investigated. Under saturated conditions, the clearly resolved fringes are observed from X-ray reflectivity (XRR) measurements, showing perfectly smooth interface between film and (100). It is consistent with high-resolution image of sharp analyzed transmission electron microscope (TEM). The highly uniform thickness...
A method for suppressing impurities in GaN thin films grown via plasma-enhanced atomic deposition (PEALD) through the situ pretreatment of Si (100) substrate with plasma was developed. This approach leads to a superior GaN/Si interface. After pretreatment, thickness interfacial layer between and substrates decreases from 2.0 1.6 nm, oxygen impurity content at interface reduces 34 12%. The pretreated exhibit thinner amorphous transition 5.3 nm comparison those nonpretreated 18.0 which...
The growth of high-quality epitaxial gallium nitride (GaN) thin films is achieved by using a baking and plasma pretreatment the substrate prior to GaN plasma-enhanced atomic layer deposition (PE-ALD). It found that such makes grow coherently on sapphire substrates, following layer-by-layer mechanism. deposited film shows high crystalline quality, sharp GaN/sapphire interface, flat surface. possibility growing epilayers in this way broadens range applications for PE-ALD GaN-based devices.
Beyond three-dimensional (3D) architectures, polar semiconductor heterostructures are developing in the direction of two-dimensional (2D) scale with mix-dimensional integration for novel properties and multifunctional applications. Herein, we stacked 2D Janus MoSSe 3D wurtzite GaN semiconductors to construct MoSSe/GaN by polarity configurations. The structural stability was enhanced as binding energy changed from -0.08 eV/-0.17 eV N -0.24 eV/-0.42 Ga polarity. In particular, reversal contact...
Polycrystalline gallium nitride (GaN) thin films were deposited on Si (100) substrates via plasma-enhanced atomic layer deposition (PEALD) under optimal parameters. In this work, we focus the research of GaN/Si interfacial properties. The x-ray reflectivity measurements show clearly-resolved fringes for all as-grown GaN films, which reveals a perfectly smooth interface between film and (100), feature sharp is further confirmed by high resolution transmission electron microscopy (HRTEM)....
By utilizing the dipole interactions, polar heterostructures are developing toward two-dimensional/three-dimensional (2D/3D) hybrid dimensions for unique phenomena such as polarization-induced electric field, charge separation, band-structure modification, etc. In this study, we have constructed 2D/3D α-In2Se3/GaN by stacking 2D α-In2Se3 and 3D wurtzite GaN semiconductors with distinct polarity configurations. Upon contacting α-In2Se3, structural stability demonstrates a direct dependence on...
A high-brightness III-nitride nanoemitter array was achieved with an ultrahigh resolution of 31 750 dpi for smart displays, advanced optical imaging, big-data information, and micro/nano opto-electro-mechanical systems.
ZnO nanowires with different diameters were grown on Si substrates, then implanted 80 keV Co+ ions at a dose of 3 × 1016 cm−2, and subsequently annealed 700 °C for 5 min. No Co precipitates appeared in the according to results observed using high-resolution transmission electron microscope, revealing that magnetism was independent precipitates. The RKKY theory could be used explain phenomenon. Hysteresis 10 K all samples sizes. Curie temperature decreased (from above 300 70 K) reduction...
The spatial distribution of electric field in photovoltaic multiple quantum wells (MQWs) is extremely important to dictate the mutual competition photoelectric conversion and optical transition. Here, electric-field-driven photoluminescence (PL) both steady-state transient-state has been utilized directly investigate internal processes InGaN-based MQW cell. As applying reversed external field, compensation confined stark effect (QCSE) InGaN QW beneficial help photoabsorbed minor carriers...
Pure metallic indium clusters of 10–50nm are identified in In0.37Ga0.63N film grown by metal organic chemical vapor deposition based on analysis x-ray diffraction, transmission electron microscopy, selected area and high resolution microscopy (HRTEM). The in-plane orientation relationships InGaN[11−20]‖metallic [0−10], InGaN [1−100]‖metallic [−101], [0001]‖metallic [101] along the growth direction. rocking curve (101) diffraction shows a large full width at half maximum 3060arcsec, which is...